Vishay SST270, SST271, J270, J271 Schematic [ru]

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J/SST270 Series

Vishay Siliconix

P-Channel JFETs

J270

SST270

J271

SST271

PRODUCT SUMMARY

Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

J/SST270

0.5 to 2.0

30

6

–2

 

 

 

 

 

J/SST271

1.5 to 4.5

30

8

–6

 

 

 

 

 

FEATURES

DLow Cutoff Voltage: J270 <2 V

DHigh Input Impedance

DVery Low Noise

DHigh Gain

DESCRIPTION

BENEFITS

APPLICATIONS

D Full Performance from Low-Voltage Power

D High-Gain, Low-Noise Amplifiers

Supply: Down to 2 V

D Low-Current, Low-Voltage Battery

D Low Signal Loss/System Error

Amplifiers

D High System Sensitivity

D Ultrahigh Input Impedance Pre-Amplifiers

D High-Quality, Low-Level Signal Amplification

D High-Side Switching

The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation.

The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package

provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information).

 

TO-226AA

 

 

 

 

 

 

 

 

(TO-92)

 

 

TO-236

 

 

 

 

 

 

 

 

(SOT-23)

D

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

2

D

1

 

 

 

 

 

 

 

 

 

 

3

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S

3

S

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Top View

 

Top View

 

 

SST270 (S0)*

 

J270

 

 

SST271 (S1)*

 

*Marking Code for TO-236

 

J271

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Notes

a.Derate 2.8 mW/_C above 25_C

Document Number: 70258

www.vishay.com

S-04233—Rev. D, 02-Jul-01

8-1

Vishay SST270, SST271, J270, J271 Schematic

J/SST270 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J/SST270

J/SST271

 

 

 

 

 

 

 

 

 

Typa

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Breakdown Voltage

V(BR)GSS

IG = 1 mA , VDS = 0 V

45

30

 

30

 

 

V

Gate-Source Cutoff Voltage

VGS(off)

VDS = –15 V, ID = –1 nA

 

0.5

2.0

1.5

4.5

 

 

 

 

 

Saturation Drain Currentb

I

V

DS

= –15 V, V = 0 V

 

–2

–15

–6

–50

mA

 

DSS

 

 

GS

 

 

 

 

 

 

 

 

Gate Reverse Current

IGSS

VGS = 20 V, VDS = 0 V

10

 

200

 

200

pA

 

 

 

TA = 125_C

5

 

 

 

 

nA

 

 

 

 

 

 

 

 

 

 

 

Gate Operating Current

 

IG

VDG = –15 V, ID = –1 mA

10

 

 

 

 

pA

Drain Cutoff Current

ID(off)

VDS = –15 V, VGS = 10 V

–10

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Forward Voltage

VGS(F)

IG = –1 mA , VDS = 0 V

–0.7

 

 

 

 

 

V

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source Forward Transconductance

gfs

VDS = –15 V, VGS = 0 V

 

6

15

8

18

mS

Common-Source Output Conductance

gos

 

 

f = 1 kHz

 

 

200

 

500

mS

 

 

 

 

 

 

 

Common-Source Input Capacitance

Ciss

VDS = –15 V, VGS = 0 V

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pF

Common-Source

 

 

 

 

 

 

 

 

Crss

 

 

f = 1 MHz

4

 

 

 

 

 

 

 

Reverse Transfer Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDG = –10 V, VGS = 0 V

 

 

 

 

 

nV

Equivalent Input Noise Voltage

 

en

20

 

 

 

 

 

 

 

f = 1 kHz

 

 

 

 

Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

 

 

 

 

 

PSCIA

b.Pulse test: PW v300 ms duty cycle v3%.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

 

200

 

 

 

 

–100

 

)

 

 

 

IDSS

 

 

I

( Ω

 

 

 

 

 

 

160

 

 

 

 

–80

DSS

OnResistance-

120

 

rDS

 

 

–60

Saturation –

 

 

 

 

 

 

 

 

 

 

Drain-Source

80

 

 

 

 

–40

Current Drain

 

 

 

 

 

 

40

 

 

 

 

–20

(mA)

DS(on)

 

 

 

 

 

 

rDS @ ID = –1 mA, VGS = 0 V

 

 

r

 

 

IDSS @ VDS = –15 V, VGS = 0 V

 

 

 

0

 

 

 

 

0

 

 

0

2

4

6

8

10

 

VGS(off) – Gate-Source Cutoff Voltage (V)

Forward Transconductance and Output Conductance

vs. Gate-Source Cutoff Voltage

 

18

 

 

 

 

250

 

(mS)

15

 

 

 

 

200

g

 

 

 

 

os

– Forward Transconductance

 

gfs

 

 

 

 

S) µ( Conductance Output –

12

 

gos

 

 

150

 

 

 

 

 

9

 

 

 

 

100

6

 

 

 

 

50

fs

 

 

gfs and gos @ VDS = –15 V

 

 

g

 

 

 

 

 

 

 

VGS = 0 V, f = 1 kHz

 

 

 

 

3

 

 

 

 

0

 

 

0

2

4

6

8

10

 

VGS(off) – Gate-Source Cutoff Voltage (V)

www.vishay.com

Document Number: 70258

8-2

S-04233— Rev. D, 02-Jul-01

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