Vishay SSTJ211, SSTJ212, J210, J211, J212 Schematic [ru]

J/SSTJ210 Series

Vishay Siliconix

N-Channel JFETs

					J210	SSTJ211
					J211	SSTJ212
					J212
PRODUCT SUMMARY
Part Number	VGS(off) (V)	V(BR)GSS Min (V)	gfs Min (mS)	IDSS Min (mA)
J210	–1 to –3	–25	4	2
J/SSTJ211	–2.5 to –4.5	–25	6	7
J/SSTJ212	–4 to –6	–25	7	15

	FEATURES	BENEFITS	APPLICATIONS
	D Excellent High Frequency Gain:	D Wideband High Gain	D High-Frequency Amplifier/Mixer
	J211/212, Gps 12 dB (typ) @ 400 MHz	D Very High System Sensitivity	D Oscillator
	D Very Low Noise: 3 dB (typ) @	D High Quality of Amplification	D Sample-and-Hold
	400 MHz	D High-Speed Switching Capability	D Very Low Capacitance Switches
	D Very Low Distortion
		D High-Quality Low-Level Signal
	D High ac/dc Switch Off-Isolation
		Amplification
	D High Gain: AV = 35 @ 100 mA

DESCRIPTION

The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA).

The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount

capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information).

For similar dual products, see the 2N5911/5912 and U440/441 data sheets.

	TO-226AA
	(TO-92)			TO-236
				(SOT-23)
D	1
S	2	D	1
							3	G
		S						SSTJ211 (Z1)*
			2
								SSTJ212 (Z2)*
G		J210
	3							*Marking Code for TO-236
		J211

J212

Top View

Top View

For applications information see AN104.

Document Number: 70234	www.vishay.com
S-04028—Rev. E, 04-Jun-01	7-1

J/SSTJ210 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .	–55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . 350 mW

Notes

a.Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

J210

J/SSTJ211

J/SSTJ212

Typa

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

Gate-Source

V(BR)GSS

IG = –1 mA , VDS = 0 V

–35

–25

–25

–25

Breakdown Voltage

V

Gate-Source Cutoff Voltage

VGS(off)

VDS = 15 V, ID = 1 nA

–1

–3

–2.5

–4.5

–4

–6

Saturation Drain Currentb

IDSS

VDS = 15 V, VGS = 0 V

2

15

7

20

15

40

mA

Gate Reverse Current

IGSS

VGS = –15 V, VDS = 0 V

–1

–100

–100

–100

pA

TA = 125_C

–0.5

nA

Gate Operating Currenta

I

V

DG

= 10 V, I = 1 mA

–1

G

D

pA

Drain Cutoff Current

ID(off)

VDS = 10 V, VGS = –8 V

1

Gate-Source Forward Voltage

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

V

Dynamic

Common-Source

gfs

4

12

6

12

7

12

mS

b

Forward Transconductance

VDS = 15 V, VGS = 0 V

Common-Source

gos

f = 1 kHz

150

200

200

mS

Output Conductance

Common-Source

Ciss

4

Input Capacitance

VDS = 15 V, VGS = 0 V

pF

Common-Source

Crss

f = 1 MHz

1.5

Reverse Transfer Capacitance

VDS = 15 V, VGS = 0 V

nV⁄

Equivalent Input Noise Voltage

en

5

f = 1 kHz

√ Hz

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NZF

b.Pulse test: PW v300 ms duty cycle v3%.

www.vishay.com	Document Number: 70234
7-2	S-04028— Rev. E, 04-Jun-01

J/SSTJ210 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

IDSS – Saturation Drain Current (mA)

	Drain Current and Transconductance
50	vs. Gate-Source Cutoff Voltage				20
	IDSS @ VDS = 10 V, VGS = 0 V					g
	gfs @ VDS = 10 V, VGS = 0 V
						fs
40	f = 1 kHz				16	–
						Forward
30					12		Leakage
						Transconductance	I
20	gfs				8		Gate
							–
						(mS)	G
10	IDSS				4
0					0
0	–2	–4	–6	–8	–10
	VGS(off) – Gate-Source Cutoff Voltage (V)

	Gate Leakage Current
100 nA	IG(on) @ ID
10 nA
	TA = 125_C
1 nA	10 mA
	IGSS @ 125_C
100 pA	1 mA
	1 mA

10 pA							10 mA
1 pA			TA = 25_C
										IGSS @ 25_C
0.1 pA
0		4				8	12			16					20
					VDG – Drain-Gate Voltage (V)

		On-Resistance and Output Conductance
		vs. Gate-Source Cutoff Voltage
	200					200
Ω )				gos
(							ConductanceOutput –
OnSource-Drain-Resistance
	160					160	g
							os
	120					120
	80					80
				rDS
–	40					40	S)m(
DS(on)			rDS @ ID = 1 mA, VGS = 0 V
			gos @ VDS = 10 V, VGS = 0 V
r			f = 1 kHz
	0					0
	0	–2	–4	–6	–8	–10
		VGS(off) – Gate-Source Cutoff Voltage (V)

Common-Source Forward Transconductance

vs. Drain Current

	10
	VGS(off) = –5 V	VDS = 10 V
(mS)		f = 1 kHz
	8
Transconductance
		TA = –55_C
	6
		25_C
	4
– Forward
		125_C
	2
fs
g
	0	1	10
	0.1
		ID – Drain Current (mA)

Output Characteristics

	5
		VGS(off) = –2 V		VGS = 0 V
	4					–0.2 V
A)						–0.4 V
(µ	3
Current
						–0.6 V
– Drain	2
						–0.8 V
D
I	1					–1.0 V
						–1.2 V
	0
	0	0.2	0.4	0.6	0.8	1
			VDS – Drain-Source Voltage (V)

Output Characteristics

	15
		VGS(off) = –5 V
	12				VGS = 0 V
(mA)				–0.5 V
	9			–1.0 V
Current
			–1.5 V
			–2.0 V
– Drain
	6					–2.5 V
						–3.0 V
D
I	3
						–3.5 V
	0
	0	0.2	0.4	0.6	0.8	1
			VDS – Drain-Source Voltage (V)

Document Number: 70234	www.vishay.com
S-04028— Rev. E, 04-Jun-01	7-3