Vishay SST174, SST175, SST176, SST177, J174 Schematic [ru]
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J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
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J174 |
SST174 |
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J175 |
SST175 |
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J176 |
SST176 |
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J177 |
SST177 |
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PRODUCT SUMMARY |
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Part Number |
VGS(off) (V) |
rDS(on) Max (W) |
ID(off) Typ (pA) |
tON Typ (ns) |
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J/SST174 |
5 to 10 |
85 |
–10 |
25 |
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J/SST175 |
3 to 6 |
125 |
–10 |
25 |
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J/SST176 |
1 to 4 |
250 |
–10 |
25 |
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J/SST177 |
0.8 to 2.25 |
300 |
–10 |
25 |
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FEATURES |
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BENEFITS |
APPLICATIONS |
D Low On-Resistance: |
J174 <85 W |
D Low Error Voltage |
D Analog Switches |
D Fast Switching—t ON: |
25 ns |
D High-Speed Analog Circuit Performance |
D Choppers |
D Low Leakage: –10 pA |
D Negligible “Off-Error,” Excellent Accuracy |
D Sample-and-Hold |
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D Low Capacitance: 5 pF |
D Good Frequency Response |
D Normally “On” Switches |
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D Low Insertion Loss |
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D Eliminates Additional Buffering |
D Current Limiters |
DESCRIPTION
The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-226AA (TO-92)
D 1
G 2
S 3
Top View
J174
J175
J176
J177
For applications information see AN104.
TO-236 (SOT-23)
D 1
3 G
S 2
Top View
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
Document Number: 70257 |
www.vishay.com |
S-04030—Rev. E, 04-Jun-01 |
9-1 |
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a.Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
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J/SST174 |
J/SST175 |
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Typa |
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Parameter |
Symbol |
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Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source Breakdown Voltage |
V(BR)GSS |
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IG = 1 mA , VDS = 0 V |
45 |
30 |
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30 |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = –15 V, ID = –10 nA |
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10 |
3 |
6 |
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Saturation Drain Currentb |
I |
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V |
DS |
= –15 V, V |
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= 0 V |
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–20 |
–135 |
–7 |
–70 |
mA |
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DSS |
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GS |
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Gate Reverse Current |
IGSS |
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VGS = 20 V, VDS = 0 V |
0.01 |
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1 |
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1 |
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TA = 125_C |
5 |
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Gate Operating Current |
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IG |
VDG = –15 V, ID = –1 mA |
0.01 |
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nA |
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Drain Cutoff Current |
ID(off) |
VDS = –15 V, VGS = 10 V |
–0.01 |
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–1 |
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–1 |
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TA = 125_C |
–5 |
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Drain-Source On-Resistance |
rDS(on) |
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VGS = 0 V, VDS = –0.1 V |
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85 |
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125 |
W |
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Gate-Source Forward Voltage |
VGS(F) |
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IG = –1 mA , VDS = 0 V |
–0.7 |
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V |
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Dynamic |
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Common-Source |
gfs |
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4.5 |
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mS |
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Forward Transconductance |
VDS = –15 V, ID = –1 mA |
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Common-Source |
gos |
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f = 1 kHz |
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20 |
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mS |
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Output Conductance |
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Drain-Source On-Resistance |
rds(on) |
VGS = 0 V, ID = 0 mA , f = 1 kHz |
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85 |
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125 |
W |
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Common-Source Input Capacitance |
Ciss |
VDS = 0 V, VGS = 0 V, f = 1 MHz |
20 |
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pF |
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Common-Source |
Crss |
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VDS = 0 V, VGS = 10 V |
5 |
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Reverse Transfer Capacitance |
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f = 1 MHz |
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VDG = –10 V, ID = –1 mA |
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nV⁄ |
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Equivalent Input Noise Voltage |
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20 |
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f = 1 kHz |
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√ |
Hz |
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Switching |
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Turn-On Time |
td(on) |
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10 |
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tr |
V |
GS(L) |
= 0 V, V |
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= 10 V |
15 |
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ns |
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GS(H) |
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See Switching Circuit |
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Turn-Off Time |
td(off) |
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10 |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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PSCIA |
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b.Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com |
Document Number: 70257 |
9-2 |
S-04030— Rev. E, 04-Jun-01 |
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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J/SST176 |
J/SST177 |
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Typa |
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Parameter |
Symbol |
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Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source Breakdown Voltage |
V(BR)GSS |
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IG = 1 mA , VDS = 0 V |
45 |
30 |
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30 |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = –15 V, ID = –10 nA |
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1 |
4 |
0.8 |
2.25 |
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Saturation Drain Currentb |
I |
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V |
DS |
= –15 V, V |
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= 0 V |
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–2 |
–35 |
–1.5 |
–20 |
mA |
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DSS |
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GS |
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Gate Reverse Current |
IGSS |
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VGS = 20 V, VDS = 0 V |
0.01 |
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1 |
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1 |
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TA = 125_C |
5 |
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Gate Operating Current |
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IG |
VDG = –15 V, ID = –1 mA |
0.01 |
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nA |
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Drain Cutoff Current |
ID(off) |
VDS = –15 V, VGS = 10 V |
–0.01 |
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–1 |
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–1 |
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TA = 125_C |
–5 |
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Drain-Source On-Resistance |
rDS(on) |
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VGS = 0 V, VDS = –0.1 V |
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250 |
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300 |
W |
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Gate-Source Forward Voltage |
VGS(F) |
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IG = –1 mA , VDS = 0 V |
–0.7 |
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V |
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Dynamic |
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Common-Source |
gfs |
VDS = –15 V, ID = –1 mA |
4.5 |
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mS |
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Forward Transconductance |
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f = 1 kHz |
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Common-Source Output Conductance |
gos |
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20 |
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mS |
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Drain-Source On-Resistance |
rds(on) |
VGS = 0 V, ID = 0 mA , f = 1 kHz |
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250 |
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300 |
W |
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Common-Source Input Capacitance |
Ciss |
VDS = 0 V, VGS = 0 V, f = 1 MHz |
20 |
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pF |
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Common-Source |
Crss |
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VDS = 0 V, VGS = 10 V |
5 |
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Reverse Transfer Capacitance |
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f = 1 MHz |
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VDG = –10 V, ID = –1 mA |
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nV⁄ |
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Equivalent Input Noise Voltage |
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en |
20 |
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f = 1 kHz |
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√ |
Hz |
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Switching |
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Turn-On Time |
td(on) |
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10 |
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tr |
V |
GS(L) |
= 0 V, V |
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= 10 V |
15 |
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ns |
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GS(H) |
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See Switching Circuit |
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Turn-Off Time |
td(off) |
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10 |
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tf |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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PSCIA |
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b.Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70257 |
www.vishay.com |
S-04030— Rev. E, 04-Jun-01 |
9-3 |
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