Vishay SST111, SST112, SST113, J111, J112 Schematic [ru]

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J/SST111 Series

Vishay Siliconix

N-Channel JFETs

 

 

 

 

 

J111

SST111

 

 

 

 

 

J112

SST112

 

 

 

 

 

J113

SST113

 

 

 

 

 

 

 

PRODUCT SUMMARY

 

 

 

 

 

 

 

 

 

 

 

 

Part Number

VGS(off) (V)

rDS(on) Max (W)

ID(off) Typ (pA)

tON Typ (ns)

 

 

J/SST111

–3 to –10

30

5

4

 

 

 

 

 

 

 

 

 

J/SST112

–1 to –5

50

5

4

 

 

 

 

 

 

 

 

 

J/SST113

v–3

100

5

4

 

 

 

 

 

 

 

 

 

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 111 < 30 W

D Low Error Voltage

D Analog Switches

D Fast Switching—t ON: 4 ns

D High-Speed Analog Circuit Performance

D Choppers

D Low Leakage: 5 pA

D Negligible “Off-Error,” Excellent Accuracy

D Sample-and-Hold

D Low Capacitance: 3 pF

D Good Frequency Response, Low Glitches

D Normally “On” Switches

D Low Insertion Loss

D Eliminates Additional Buffering

D Current Limiters

DESCRIPTION

 

 

The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode.

The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information).

TO-226AA (TO-92)

D 1

S 2

G 3

Top View

J111

J112

J113

For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets.

TO-236 (SOT-23)

D 1

3 G

S 2

Top View

SST111 (C1)*

SST112 (C2)*

SST113 (C3)*

*Marking Code for TO-236

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

For applications information see AN105.

Power Dissipationa

(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW

Notes

a.Derate 2.8 mW/_C above 25_C

Document Number: 70232

www.vishay.com

S-04028—Rev. E, 04-Jun-01

7-1

Vishay SST111, SST112, SST113, J111, J112 Schematic

J/SST111 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J/SST111

J/SST112

J/SST113

 

 

 

 

 

 

 

Typa

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

V(BR)GSS

IG = –1 mA , VDS = 0 V

–55

–35

 

–35

 

–35

 

 

Breakdown Voltage

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Cutoff Voltage

VGS(off)

VDS = 5 V, ID = 1 mA

 

–3

–10

–1

–5

 

–3

 

Saturation Drain Currentb

I

V

DS

= 15 V, V = 0 V

 

20

 

5

 

2

 

mA

 

DSS

 

 

GS

 

 

 

 

 

 

 

 

Gate Reverse Current

IGSS

VGS = –15 V, VDS = 0 V

–0.005

 

–1

 

–1

 

–1

nA

 

 

 

TA = 125_C

–3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate Operating Current

 

IG

VDG = 15 V, ID = 10 mA

–5

 

 

 

 

 

 

pA

Drain Cutoff Current

ID(off)

VDS = 5 V, VGS = –10 V

0.005

 

1

 

1

 

1

nA

 

 

 

TA = 125_C

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, VDS = 0.1 V

 

 

30

 

50

 

100

W

Gate-Source Forward Voltage

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

 

 

 

 

 

 

V

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source Forward

gfs

 

 

 

 

6

 

 

 

 

 

 

mS

Transconductance

VDS = 20 V, ID = 1 mA

 

 

 

 

 

 

Common-Source

gos

 

 

f = 1 kHz

25

 

 

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

 

Output Conductance

 

 

 

 

 

 

 

 

 

 

Drain-Source On-Resistance

rds(on)

VGS = 0 V, ID = 0 mA

 

 

30

 

50

 

100

W

 

 

f = 1 kHz

 

 

 

 

Common-Source

Ciss

 

 

 

 

7

 

12

 

12

 

12

 

Input Capacitance

VDS = 0 V, VGS = -10 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pF

Common-Source Reverse Transfer

Crss

 

 

f = 1 MHz

3

 

5

 

5

 

5

 

Capacitance

 

 

 

 

 

 

 

 

Equivalent Input

 

 

 

VDG = 10 V, ID = 1 mA

 

 

 

 

 

 

 

nV

 

en

3

 

 

 

 

 

 

Noise Voltage

 

 

 

f = 1 kHz

 

 

 

 

 

 

Hz

Switching

Turn-On Time

td(on)

 

2

 

 

 

 

 

 

tr

VDD = 10 V, VGS(H) = 0 V

2

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-Off Time

td(off)

See Switching Circuit

6

 

 

 

 

 

 

 

 

 

 

 

 

 

tf

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

a.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

b.Pulse test: PW v300 ms duty cycle v3%.

ns

NCB

www.vishay.com

Document Number: 70232

7-2

S-04028— Rev. E, 04-Jun-01

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