Vishay SST108, SST109, SST110, J108, J109 Schematic [ru]

J/SST108 Series

Vishay Siliconix

N–Channel JFETs

					J108	SST108
					J109	SST109
					J110	SST110
PRODUCT SUMMARY
Part Number	VGS(off) (V)	rDS(on) Max (W)	ID(off) Typ (pA)	tON Typ (ns)
J/SST108	–3 to –10	8	20	4
J/SST109	–2 to –6	12	20	4
J/SST110	–0.5 to –4	18	20	4

FEATURES			BENEFITS	APPLICATIONS
D Low On-Resistance:	J108	<8 W	D Low Error Voltage	D Analog Switches
D Fast Switching—t ON:	4 ns		D High-Speed Analog Circuit Performance	D Choppers
D Low Leakage: 20 pA			D Negligible “Off-Error” Excellent Accuracy	D Sample-and-Hold
D Low Capacitance: 11 pF			D Good Frequency Response	D Normally “On” Switches
D Low Insertion Loss			D Eliminates Additional Buffering	D Current Limiters

DESCRIPTION

The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching.

The SST108 series is comprised of surface-mount

devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device.

The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet.

	TO-226AA				TO-236
	(TO-92)				(SOT-23)
D	1		D	1
			S					3	G
S	2			2
G	3
					Top View

SST108 (I8)*

SST109 (I9)*

SST110 (I0)*

Top View

*Marking Code for TO-236

J108, J109, J110

Document Number: 70231	www.vishay.com
S-04028—Rev. E, 04-Jun-01	7-1

J/SST108 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .	–55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . 350 mW

Notes

a.Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

J/SST108

J/SST109

J/SST110

Typa

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

Gate-Source

V(BR)GSS

IG = –1 mA , VDS = 0 V

–32

–25

–25

–25

Breakdown Voltage

V

Gate-Source Cutoff Voltage

VGS(off)

VDS = 5 V, ID = 1 mA

–3

–10

–2

–6

–0.5

–4

Saturation Drain Currentb

I

V

DS

= 15 V, V

GS

= 0 V

80

40

10

mA

DSS

Gate Reverse Current

IGSS

VGS = –15 V, VDS = 0 V

–0.01

–3

–3

–3

TA = 125_C

–5

Gate Operating Current

IG

VDG = 10 V, ID = 10 mA

–0.01

nA

Drain Cutoff Current

ID(off)

VDS = 5 V, VGS = –10 V

0.02

3

3

3

TA = 125_C

1.0

Drain-Source

rDS(on)

VGS = 0 V, VDS v 0.1 V

8

12

18

W

On-Resistance

Gate-Source

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

V

Forward Voltage

Dynamic

Common-Source

gfs

17

Forward Transconductance

VDS = 5 V, ID = 10 mA, f = 1 kHz

mS

Common-Source

gos

0.6

Output Conductance

Drain-Source

rds(on)

VGS = 0 V, ID = 0 mA , f = 1 kHz

8

12

18

W

On-Resistance

Common-Source

VDS = 0 V

SST

60

Input Capacitance

Ciss

VGS = 0 V

J Series

60

85

85

85

f = 1 MHz

pF

Common-Source Reverse

VDS = 0 V

SST

11

Transfer Capacitance

Crss

VGS = –10 V

J Series

11

15

15

15

f = 1 MHz

Equivalent Input

VDG = 5 V, ID = 10 mA

nV⁄

en

3.5

Noise Voltage

f = 1 kHz

√ Hz

Switching

Turn-On Time

td(on)

3

tr

VDD = 1.5 V, VGS(H) = 0 V

1

ns

td(off)

See Switching Diagram

4

Turn-Off Time

tf

18

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NIP

b.Pulse test: PW v300 ms duty cycle v3%.

www.vishay.com	Document Number: 70231
7-2	S-04028— Rev. E, 04-Jun-01