VISHAY ILD205T, IL206T, IL207T, IL211T, IL213T User Manual

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VISHAY ILD205T, IL206T, IL207T, IL211T, IL213T User Manual

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T

Vishay Semiconductors

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package

Features

• Two Channel Coupler

• SOIC-8A Surface Mountable Package

• Standard Lead Spacing of .05 "

• Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)

• Isolation Test Voltage, 3000 VRMS

 

Compatible with Dual Wave, Vapor Phase and IR

 

 

Reflow Soldering

 

Lead-free component

i179018

A 1

8 C

C 2

7 E

A 3

6 C

C 4

5 E

e3 Pb

Pb-free

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code Y

Description

The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.

Order Information

Part

 

Remarks

ILD205T

CTR 40

- 80 %, SOIC-8

 

 

 

ILD206T

CTR 63

- 125 %, SOIC-8

 

 

ILD207T

CTR 100 - 200 %, SOIC-8

 

 

ILD211T

CTR > 20 %, SOIC-8

 

 

ILD213T

CTR > 100 %, SOIC-8

 

 

ILD217T

CTR > 100 %, SOIC-8

 

 

 

For additional information on the available options refer to Option Information.

Document Number 83647

www.vishay.com

Rev. 1.4, 26-Oct-04

1

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter

Test condition

Symbol

Value

Unit

Peak reverse voltage

 

VR

6.0

V

Peak pulsed current

1.0 µs, 300 pps

 

1.0

A

 

 

 

 

 

Continuous forward current per

 

 

30

mA

channel

 

 

 

 

 

 

 

 

 

Power dissipation

 

Pdiss

50

mW

Derate linearly from 25 °C

 

 

0.66

mW/°C

 

 

 

 

 

Output

Parameter

Test condition

Symbol

Value

Unit

Collector-emitter breakdown voltage

 

BVCEO

70

V

Emitter-collector breakdown voltage

 

BVECO

7.0

V

Power dissipation per channel

 

Pdiss

125

mW

Derate linearly from 25 °C

 

 

1.67

mW/°C

 

 

 

 

 

Coupler

Parameter

Test condition

Symbol

Value

Unit

Total package dissipation

 

Ptot

300

mW

ambient (2 LEDs + 2 detectors,

 

 

 

 

2 channels)

 

 

 

 

 

 

 

 

 

Derate linearly from 25 °C

 

 

4.0

mW/°C

 

 

 

 

 

Storage temperature

 

Tstg

- 55 to + 150

°C

Operating temperature

 

Tamb

- 55 to + 100

°C

Soldering time from 260 °C

 

Tsld

10

sec.

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 10 mA

VF

 

1.2

1.55

V

Reverse current

VR = 6.0 V

IR

 

0.1

100

µA

Capacitance

VR = 0

CO

 

25

 

pF

www.vishay.com

Document Number 83647

2

Rev. 1.4, 26-Oct-04

ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T

Vishay Semiconductors

Output

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter breakdown

IC = 10 µA

BVCEO

70

 

 

V

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter-collector breakdown

IE = 10 µA

BVECO

7.0

 

 

V

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-emitter leakage

VCE = 10 V, IF = 0

ICEO

 

5.0

50

nA

current

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-emitter capacitance

VCE = 0

CCE

 

10

 

pF

Coupler

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter saturation

IF = 10 mA, IC = 2.5 mA

VCE(sat)

 

 

0.4

V

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance (input-output)

 

CIO

 

0.5

 

pF

Isolation test voltage

t = 1.0 sec.

VISO

3000

 

 

VRMS

Resistance, input to output

 

RIO

 

100

 

GΩ

Current Transfer Ratio

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

DC Current Transfer Ratio

VCE = 5.0 V, IF = 10 mA

ILD205T

CTRDC

40

 

80

%

 

 

ILD206T

CTRDC

63

 

125

%

 

 

ILD207T

CTRDC

100

 

200

%

 

 

ILD211T

CTRDC

20

 

 

%

 

 

ILD213T

CTRDC

100

 

 

%

 

VCE = 5.0 V, IF = 1.0 mA

ILD205T

CTRDC

13

30

 

%

 

 

ILD206T

CTRDC

22

45

 

%

 

 

ILD207T

CTRDC

34

70

 

%

 

 

ILD217T

CTRDC

100

120

 

%

Document Number 83647

www.vishay.com

Rev. 1.4, 26-Oct-04

3

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