IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package
Features
• High BVCEO, 70 V
• Isolation Test Voltage, 3000 VRMS
• Industry Standard SOIC-8A Surface |
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Mountable Package |
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•Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
•Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
•UL1577, File No. E52744 System Code Y
•DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
A |
1 |
8 |
NC |
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2 |
7 |
B |
NC 3 |
6 |
C |
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NC 4 |
5 |
E |
i179002
A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard
30 V.
Description
The IL205AT/ IL206AT/ IL207AT/ IL208AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8A small outline package for surface mounting which makes them ideally suited for high density application with limited space. In addition to eliminating through-hole requirements, this package conforms to standards for surface mounted devices.
Order Information
Part |
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Remarks |
IL205AT |
CTR 40 |
- 80 %, SOIC-8 |
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IL206AT |
CTR 63 |
- 125 %, SOIC-8 |
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IL207AT |
CTR 100 - 200 %, SOIC-8 |
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IL208AT |
CTR 160 - 320 %, SOIC-8 |
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Available on Tape and Reel only.
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter |
Test condition |
Symbol |
Value |
Unit |
Peak reverse voltage |
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VR |
6.0 |
V |
Forward continuous current |
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IF |
60 |
mA |
Power dissipation |
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Pdiss |
90 |
mW |
Derate linearly from 25 °C |
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1.2 |
mW/°C |
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Document Number 83614 |
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www.vishay.com |
Rev. 1.6, 18-Apr-05 |
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1 |
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Output
Parameter |
Test condition |
Symbol |
Value |
Unit |
Collector-emitter breakdown voltage |
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BVCEO |
70 |
V |
Emitter-collector breakdown voltage |
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BVECO |
7.0 |
V |
Collector-base breakdown voltage |
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BVCBO |
70 |
V |
ICMAX DC |
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ICMAX DC |
50 |
mA |
ICMAX |
t < 1.0 ms |
ICMAX |
100 |
mA |
Power dissipation |
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Pdiss |
150 |
mW |
Derate linearly from 25 °C |
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2.0 |
mW/°C |
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Coupler
Parameter |
Test condition |
Symbol |
Value |
Unit |
Total package dissipation (LED + detector) |
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Ptot |
240 |
mW |
Derate linearly from 25 °C |
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3.3 |
mW/°C |
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Operating temperature |
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Tamb |
- 55 to + 100 |
°C |
Storage temperature |
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Tstg |
- 55 to + 150 |
°C |
Soldering time |
at 260 °C |
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10 |
s |
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Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Forward voltage |
IF = 10 mA |
VF |
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1.3 |
1.5 |
V |
Reverse current |
VR = 6.0 V |
IR |
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0.1 |
100 |
µA |
Capacitance |
VR = 0 V |
CO |
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13 |
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pF |
Output
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Collector-emitter breakdown |
IC = 100 µA |
BVCEO |
70 |
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V |
voltage |
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Emitter-collector breakdown |
IE = 100 µA |
BVECO |
7.0 |
10 |
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V |
voltage |
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Collector-emitter leakage |
VCE = 10 V |
ICEO |
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5.0 |
50 |
nA |
current |
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Coupler
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Saturation voltage, collector- |
IC = 2.0 mA, IF = 10 mA |
VCEsat |
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0.4 |
V |
emitter |
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Isolation test voltage |
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VISO |
3000 |
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VRMS |
Equivalent DC, isolation voltage |
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3535 |
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VDC |
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Capacitance (input-output) |
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CIO |
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0.5 |
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pF |
Resistance, input to output |
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RIO |
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100 |
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Ω |
www.vishay.com |
Document Number 83614 |
2 |
Rev. 1.6, 18-Apr-05 |
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Current Transfer Ratio
Parameter |
Test condition |
Part |
Symbol |
Min |
Typ. |
Max |
Unit |
Current Transfer Ratio |
IF = 10 mA, VCE = 5.0 V |
IL205AT |
CTR |
40 |
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80 |
% |
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IL206AT |
CTR |
63 |
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125 |
% |
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IL207AT |
CTR |
100 |
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200 |
% |
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IL208AT |
CTR |
100 |
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320 |
% |
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IF = 1.0 mA, VCE = 5.0 V |
IL205AT |
CTR |
13 |
25 |
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% |
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IL206AT |
CTR |
22 |
40 |
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% |
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IL207AT |
CTR |
34 |
60 |
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% |
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IL208AT |
CTR |
56 |
95 |
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% |
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Switching Characteristics
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Switching time |
IC = 2 mA, RL = 100 Ω, |
ton, toff |
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3.0 |
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µs |
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VCC = 10 V |
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Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VF - Forward Voltage - V
i205at_01
1.4 |
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150 |
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1.3 |
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mA |
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- |
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1.2 |
TA= –55°C |
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Current |
100 |
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VCE = 10 V |
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1.1 |
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-emitter |
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1.0 |
TA= 25°C |
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VCE = 0.4 V |
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0.9 |
TA = 85°C |
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Collector- |
50 |
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0.8 |
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CE |
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0.7 |
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I |
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0.1 |
1 |
10 |
100 |
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.1 |
1 |
10 |
100 |
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IF - Forward Current - mA |
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i205at_03 |
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IF - LED Current - mA |
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Figure 1. Forward Voltage vs. Forward Current |
Figure 3. Collector-Emitter Current vs.LED Current |
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1.5 |
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Normalized |
to: |
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CE |
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VCE=10 V |
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1.0 |
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CTR- |
IF=10 mA |
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VCE = 5 V |
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- Normalized |
0.5 |
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CE |
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NCTR |
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VCE = 0.4 V |
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0.0 |
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.1 |
1 |
10 |
100 |
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i205at_02 |
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IF - LED Current - mA |
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Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current
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Normalized to: |
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VCB=9.3 V |
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CB |
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IF=1 mA |
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- Normalized |
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CB |
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.1 . |
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1 |
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i205at_04 |
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IF - LED Current - mA |
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Figure 4. Normalized Collector-Base Photocurrent vs. LED Current
Document Number 83614 |
www.vishay.com |
Rev. 1.6, 18-Apr-05 |
3 |