CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
•Isolation materials according to UL94-VO
•Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)
•Climatic classification 55/100/21 (IEC 60068 part 1)
•Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
•Low temperature coefficient of CTR
•CTR offered in 3 groups
B |
C |
E |
6 |
5 |
4 |
1 |
2 |
3 |
A (+) C (-) |
nc |
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DV E |
17186 e3 |
Pb |
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Pb-free |
•Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
•Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
•Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275
•Thickness through insulation ≥ 0.75 mm
•Lead-free component
•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
•UL1577, File No. E76222 System Code A, Double Protection
•BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
•DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending
•VDE related features:
•Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
•Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
•FIMKO (SETI): EN 60950, Certificate No. 12399
Applications
For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747- 5-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Description
The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending
Optocoupler for electrical safety requirements
IEC 60950/ EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤ 400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Circuits for safe protective separation against electri- |
Safety for mains-operated electronic and related house hold appa- |
cal shock according to safety class II (reinforced iso- |
ratus |
lation): |
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For appl. class I - IV at mains voltage ≤ 300 V |
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Document Number 83536 |
www.vishay.com |
Rev. 1.7, 26-Oct-04 |
1 |
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Order Information |
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For additional information on the available options refer to |
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Option Information. |
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Part |
Remarks |
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CNY75A |
CTR 63 - 125 %, DIP-6 |
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CNY75B |
CTR 100 - 200 %, DIP-6 |
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CNY75C |
CTR 160 - 320 %, DIP-6 |
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CNY75GA |
CTR 63 - 125 %, DIP-6 |
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CNY75GB |
CTR 100 - 200 %, DIP-6 |
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CNY75GC |
CTR 160 - 320 %, DIP-6 |
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G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse voltage |
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VR |
5 |
V |
Forward current |
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IF |
60 |
mA |
Forward surge current |
tp ≤ 10 µs |
IFSM |
3 |
A |
Power dissipation |
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Pdiss |
100 |
mW |
Junction temperature |
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Tj |
125 |
°C |
Output
Parameter |
Test condition |
Symbol |
Value |
Unit |
Collector base voltage |
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VCBO |
90 |
V |
Collector emitter voltage |
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VCEO |
90 |
V |
Emitter collector voltage |
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VECO |
7 |
V |
Collector current |
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IC |
50 |
mA |
Collector peak current |
tp/T = 0.5, tp ≤ 10 ms |
ICM |
100 |
mA |
Power dissipation |
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Pdiss |
150 |
mW |
Junction temperature |
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Tj |
125 |
°C |
Coupler
Parameter |
Test condition |
Symbol |
Value |
Unit |
AC isolation test voltage (RMS) |
t = 1 min |
VISO |
3750 |
VRMS |
Total power dissipation |
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Ptot |
250 |
mW |
Ambient temperature range |
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Tamb |
- 55 to + 100 |
°C |
Storage temperature range |
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Tstg |
- 55 to + 125 |
°C |
Soldering temperature |
2 mm from case, t ≤ 10 s |
Tsld |
260 |
°C |
www.vishay.com |
Document Number 83536 |
2 |
Rev. 1.7, 26-Oct-04 |
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Forward voltage |
IF = 50 mA |
VF |
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1.25 |
1.6 |
V |
Reverse current |
VR = 6 V |
IR |
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10 |
µA |
Junction capacitance |
VR = 0, f = 1 MHz |
Cj |
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50 |
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pF |
Output
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Collector base voltage |
IC = 100 µA |
VCBO |
90 |
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V |
Collector emitter voltage |
IC = 1 mA |
VCEO |
90 |
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V |
Emitter collector voltage |
IE = 100 µA |
VECO |
7 |
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V |
Collector-emitter leakage |
VCE = 20 V, IF = 0 |
ICEO |
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150 |
nA |
current |
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Coupler
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Collector emitter saturation |
IF = 10 mA, IC = 1 mA |
VCEsat |
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0.3 |
V |
voltage |
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Cut-off frequency |
VCE = 5 V, IF = 10 mA, |
fc |
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110 |
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kHz |
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RL = 100 Ω |
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Coupling capacitance |
f = 1 MHz |
Ck |
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0.3 |
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pF |
Current Transfer Ratio
Parameter |
Test condition |
Part |
Symbol |
Min |
Typ. |
Max |
Unit |
IC/IF |
VCE = 5 V, IF = 1 mA |
CNY75GA |
CTR |
15 |
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% |
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CNY75GB |
CTR |
30 |
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% |
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CNY75GC |
CTR |
60 |
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% |
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VCE = 5 V, IF = 10 mA |
CNY75GA |
CTR |
63 |
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1.25 |
% |
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CNY75GB |
CTR |
100 |
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200 |
% |
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CNY75GC |
CTR |
160 |
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320 |
% |
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Switching Characteristics
Parameter |
Current |
Delay |
Rise time |
Storage |
Fall time |
Turn-on |
Turn-off |
Turn-on |
Turn-off |
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time |
time |
time |
time |
Test |
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VCC = 5 V, RL = 100 Ω |
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VCC = 5 V, RL = 1.0 kΩ |
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condition |
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(see figure 3) |
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(see figure 4) |
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Symbol |
IF |
tD |
tr |
tS |
tf |
ton |
toff |
ton |
toff |
Unit |
mA |
µs |
µs |
µs |
µs |
µs |
µs |
µs |
µs |
CNY75GA |
10 |
2.0 |
2.5 |
0.3 |
2.7 |
4.5 |
3.0 |
10.0 |
25.0 |
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CNY75GB |
10 |
2.5 |
3.0 |
0.3 |
3.7 |
5.5 |
4.0 |
16.5 |
20.0 |
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CNY75GC |
10 |
2.8 |
4.2 |
0.3 |
4.7 |
7.0 |
5.0 |
11.0 |
37.5 |
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Document Number 83536 |
www.vishay.com |
Rev. 1.7, 26-Oct-04 |
3 |
CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Forward current |
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IF |
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130 |
mA |
Output
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Power dissipation |
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Pdiss |
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265 |
mW |
Coupler
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Rated impulse voltage |
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VIOTM |
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6 |
kV |
Safety temperature |
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Tsi |
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150 |
°C |
Insulation Rated Parameters
Parameter |
Test condition |
Symbol |
Min |
Typ. |
Max |
Unit |
Partial discharge test voltage - |
100 %, ttest = 1 s |
Vpd |
1.6 |
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kV |
Routine test |
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Partial discharge test voltage - |
tTr = 60 s, ttest = 10 s, |
VIOTM |
6 |
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kV |
Lot test (sample test) |
(see figure 2) |
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Vpd |
1.3 |
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kV |
Insulation resistance |
VIO = 500 V |
RIO |
1012 |
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Ω |
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VIO = 500 V, Tamb ≤ 100 °C |
RIO |
1011 |
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Ω |
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VIO = 500 V, Tamb ≤ 150 °C |
RIO |
109 |
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Ω |
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(construction test only) |
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VIOTM |
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275 |
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t1, t2 = 1 to 10 s |
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t3, t4 = 1 s |
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mW( |
250 |
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ttest = 10 s |
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225 |
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Dissipation |
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Psi (mW) |
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tstres = 12 s |
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200 |
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VPd |
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175 |
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VIOWM |
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150 |
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Power |
125 |
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VIORM |
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Total- |
100 |
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50 |
Isi (mA) |
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75 |
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25 |
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0 |
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t3 ttest t4 |
tot |
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P |
0 |
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t1 |
tTr = 60 s |
t2 |
tstres |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
13930 |
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175 |
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t |
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95 10923 |
Tamb - Ambient Temperature ( °C ) |
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Figure 1. Derating diagram |
Figure 2. Test pulse diagram for sample test according to DIN EN |
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60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 |
www.vishay.com |
Document Number 83536 |
4 |
Rev. 1.7, 26-Oct-04 |