VISHAY CNY75A, CNY75 B, CNY75C, CNY75GA, CNY75 GB Technical data

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CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features

Isolation materials according to UL94-VO

Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)

Climatic classification 55/100/21 (IEC 60068 part 1)

Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

Low temperature coefficient of CTR

CTR offered in 3 groups

B

C

E

6

5

4

1

2

3

A (+) C (-)

nc

 

DV E

17186 e3

Pb

 

Pb-free

Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

Rated recurring peak voltage (repetitive) VIORM = 600 VRMS

Creepage current resistance according to VDE

0303/IEC 60112 Comparative Tracking Index: CTI ≥ 275

Thickness through insulation ≥ 0.75 mm

Lead-free component

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

UL1577, File No. E76222 System Code A, Double Protection

BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402

DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending

VDE related features:

Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak

Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV

FIMKO (SETI): EN 60950, Certificate No. 12399

Applications

For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747- 5-5 pending, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

Description

The CNY75A/ B/ C/ GA/ GB/ GC consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package.

The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending

Optocoupler for electrical safety requirements

IEC 60950/ EN 60950

Office machines (applied for reinforced isolation for mains voltage

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Circuits for safe protective separation against electri-

Safety for mains-operated electronic and related house hold appa-

cal shock according to safety class II (reinforced iso-

ratus

lation):

 

For appl. class I - IV at mains voltage ≤ 300 V

 

 

 

Document Number 83536

www.vishay.com

Rev. 1.7, 26-Oct-04

1

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Order Information

 

For additional information on the available options refer to

 

 

Option Information.

Part

Remarks

 

CNY75A

CTR 63 - 125 %, DIP-6

 

 

 

 

CNY75B

CTR 100 - 200 %, DIP-6

 

 

 

 

CNY75C

CTR 160 - 320 %, DIP-6

 

 

 

 

CNY75GA

CTR 63 - 125 %, DIP-6

 

 

 

 

CNY75GB

CTR 100 - 200 %, DIP-6

 

 

 

 

CNY75GC

CTR 160 - 320 %, DIP-6

 

 

 

 

G = Leadform 10.16 mm; G is not marked on the body

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

 

VR

5

V

Forward current

 

IF

60

mA

Forward surge current

tp ≤ 10 µs

IFSM

3

A

Power dissipation

 

Pdiss

100

mW

Junction temperature

 

Tj

125

°C

Output

Parameter

Test condition

Symbol

Value

Unit

Collector base voltage

 

VCBO

90

V

Collector emitter voltage

 

VCEO

90

V

Emitter collector voltage

 

VECO

7

V

Collector current

 

IC

50

mA

Collector peak current

tp/T = 0.5, tp ≤ 10 ms

ICM

100

mA

Power dissipation

 

Pdiss

150

mW

Junction temperature

 

Tj

125

°C

Coupler

Parameter

Test condition

Symbol

Value

Unit

AC isolation test voltage (RMS)

t = 1 min

VISO

3750

VRMS

Total power dissipation

 

Ptot

250

mW

Ambient temperature range

 

Tamb

- 55 to + 100

°C

Storage temperature range

 

Tstg

- 55 to + 125

°C

Soldering temperature

2 mm from case, t ≤ 10 s

Tsld

260

°C

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Document Number 83536

2

Rev. 1.7, 26-Oct-04

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 50 mA

VF

 

1.25

1.6

V

Reverse current

VR = 6 V

IR

 

 

10

µA

Junction capacitance

VR = 0, f = 1 MHz

Cj

 

50

 

pF

Output

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector base voltage

IC = 100 µA

VCBO

90

 

 

V

Collector emitter voltage

IC = 1 mA

VCEO

90

 

 

V

Emitter collector voltage

IE = 100 µA

VECO

7

 

 

V

Collector-emitter leakage

VCE = 20 V, IF = 0

ICEO

 

 

150

nA

current

 

 

 

 

 

 

 

 

 

 

 

 

 

Coupler

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector emitter saturation

IF = 10 mA, IC = 1 mA

VCEsat

 

 

0.3

V

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Cut-off frequency

VCE = 5 V, IF = 10 mA,

fc

 

110

 

kHz

 

RL = 100 Ω

 

 

 

 

 

Coupling capacitance

f = 1 MHz

Ck

 

0.3

 

pF

Current Transfer Ratio

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

IC/IF

VCE = 5 V, IF = 1 mA

CNY75GA

CTR

15

 

 

%

 

 

CNY75GB

CTR

30

 

 

%

 

 

 

 

 

 

 

 

 

 

CNY75GC

CTR

60

 

 

%

 

 

 

 

 

 

 

 

 

VCE = 5 V, IF = 10 mA

CNY75GA

CTR

63

 

1.25

%

 

 

CNY75GB

CTR

100

 

200

%

 

 

 

 

 

 

 

 

 

 

CNY75GC

CTR

160

 

320

%

 

 

 

 

 

 

 

 

Switching Characteristics

Parameter

Current

Delay

Rise time

Storage

Fall time

Turn-on

Turn-off

Turn-on

Turn-off

 

 

 

 

 

 

time

time

time

time

Test

 

 

VCC = 5 V, RL = 100 Ω

 

 

VCC = 5 V, RL = 1.0 kΩ

condition

 

 

 

(see figure 3)

 

 

 

(see figure 4)

Symbol

IF

tD

tr

tS

tf

ton

toff

ton

toff

Unit

mA

µs

µs

µs

µs

µs

µs

µs

µs

CNY75GA

10

2.0

2.5

0.3

2.7

4.5

3.0

10.0

25.0

 

 

 

 

 

 

 

 

 

 

CNY75GB

10

2.5

3.0

0.3

3.7

5.5

4.0

16.5

20.0

 

 

 

 

 

 

 

 

 

 

CNY75GC

10

2.8

4.2

0.3

4.7

7.0

5.0

11.0

37.5

 

 

 

 

 

 

 

 

 

 

Document Number 83536

www.vishay.com

Rev. 1.7, 26-Oct-04

3

VISHAY CNY75A, CNY75 B, CNY75C, CNY75GA, CNY75 GB Technical data

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings.

Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward current

 

IF

 

 

130

mA

Output

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Power dissipation

 

Pdiss

 

 

265

mW

Coupler

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Rated impulse voltage

 

VIOTM

 

 

6

kV

Safety temperature

 

Tsi

 

 

150

°C

Insulation Rated Parameters

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Partial discharge test voltage -

100 %, ttest = 1 s

Vpd

1.6

 

 

kV

Routine test

 

 

 

 

 

 

 

 

 

 

 

 

 

Partial discharge test voltage -

tTr = 60 s, ttest = 10 s,

VIOTM

6

 

 

kV

Lot test (sample test)

(see figure 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vpd

1.3

 

 

kV

Insulation resistance

VIO = 500 V

RIO

1012

 

 

 

VIO = 500 V, Tamb ≤ 100 °C

RIO

1011

 

 

 

VIO = 500 V, Tamb ≤ 150 °C

RIO

109

 

 

 

(construction test only)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIOTM

 

 

 

 

275

 

 

 

 

 

 

 

t1, t2 = 1 to 10 s

 

 

)

 

 

 

 

 

 

 

t3, t4 = 1 s

 

 

 

 

 

 

 

 

 

 

 

 

mW(

250

 

 

 

 

 

 

 

ttest = 10 s

 

 

 

 

 

 

 

 

 

 

 

 

 

225

 

 

 

 

 

 

 

 

 

Dissipation

 

 

Psi (mW)

 

 

 

tstres = 12 s

 

 

200

 

 

 

 

VPd

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

175

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIOWM

 

 

 

 

150

 

 

 

 

 

 

 

 

 

Power

125

 

 

 

 

 

 

VIORM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Total-

100

 

 

 

 

 

 

 

 

 

 

50

Isi (mA)

 

 

 

 

 

 

 

 

 

75

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

0

 

 

t3 ttest t4

tot

 

 

 

 

 

 

 

 

 

P

0

 

 

 

 

 

 

t1

tTr = 60 s

t2

tstres

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

13930

 

 

 

 

175

 

 

t

 

 

 

 

 

 

 

 

 

 

 

95 10923

Tamb - Ambient Temperature ( °C )

 

 

 

 

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN EN

 

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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Document Number 83536

4

Rev. 1.7, 26-Oct-04

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