2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number |
VGS(off) (V) |
V(BR)GSS Min (V) |
gfs Min (mS) |
IDSS Min (mA) |
2N/SST5484 |
−0.3 to −3 |
−25 |
3 |
1 |
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2N/SST5485 |
−0.5 to −4 |
−25 |
3.5 |
4 |
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2N/SST5486 |
−2 to −6 |
−25 |
4 |
8 |
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FEATURES |
BENEFITS |
APPLICATIONS |
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D Excellent High-Frequency Gain: |
D Wideband High Gain |
D High-Frequency Amplifier/Mixer |
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Gps 13 dB (typ) @ 400 MHz − 5485/6 |
D Very High System Sensitivity |
D Oscillator |
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D Very Low Noise: 2.5 dB (typ) @ |
D High Quality of Amplification |
D Sample-and-Hold |
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400 MHz − 5485/6 |
D High-Speed Switching Capability |
D Very Low Capacitance Switches |
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D Very Low Distortion |
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D High Low-Level Signal Amplification |
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D High AC/DC Switch Off-Isolation |
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DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information).
TO-226AA (TO-92)
D 1
S 2
G 3
Top View 2N5484 2N5485 2N5486
For applications information see AN102 and AN105.
TO-236 (SOT-23
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D 1
3 G
S 2
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
Document Number: 70246 |
www.vishay.com |
S-50148—Rev. G, 24-Jan-05 |
1 |
2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
350 mW |
Notes |
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a.Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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2N5484 |
2N5485 |
2N5486 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source |
V(BR)GSS |
IG = −1 mA , VDS = 0 V |
−35 |
−25 |
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−25 |
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−25 |
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Breakdown Voltage |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = 15 V, ID = 10 nA |
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−0.3 |
−3 |
−0.5 |
−4 |
−2 |
−6 |
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Saturation Drain Currentb |
I |
V |
DS |
= 15 V, V |
= 0 V |
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1 |
5 |
4 |
10 |
8 |
20 |
mA |
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DSS |
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GS |
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Gate Reverse Current |
IGSS |
VGS = −20 V, VDS = 0 V |
−0.002 |
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−1 |
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−1 |
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−1 |
nA |
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TA = 100_C |
−0.2 |
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−200 |
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−200 |
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−200 |
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Gate Operating Currentc |
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I |
V |
DG |
= 10 V, I |
= 1 mA |
−20 |
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pA |
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G |
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D |
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Gate-Source |
VGS(F) |
IG = 10 mA , VDS = 0 V |
0.8 |
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V |
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Forward Voltagec |
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Dynamic |
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Common-Source |
gfs |
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3 |
6 |
3.5 |
7 |
4 |
8 |
mS |
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Forward TransconductanceNO TAG |
VDS |
= 15 V, VGS = 0 V |
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Common-Source |
gos |
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f = 1 kHz |
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50 |
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60 |
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75 |
mS |
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Output ConductanceNO TAG |
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Common-Source |
Ciss |
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2.2 |
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Input Capacitance |
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Common-Source |
Crss |
VDS = 15 V, VGS = 0 V |
0.7 |
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1 |
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1 |
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1 |
pF |
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Reverse Transfer Capacitance |
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f = 1 MHz |
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Common-Source |
Coss |
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1 |
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2 |
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Output Capacitance |
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Equivalent Input |
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VDS |
= 15 V, VGS = 0 V |
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nV⁄ |
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en |
10 |
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Noise Voltagec |
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f = 100 Hz |
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√Hz |
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High-Frequency |
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Common-Source |
Yfs(RE) |
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f = 100 MHz |
5.5 |
2.5 |
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mS |
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d |
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f = 400 MHz |
5.5 |
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3 |
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3.5 |
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Transconductance |
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Common-Source |
Yos(RE) |
VDS = 15 V |
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f = 100 MHz |
45 |
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75 |
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mS |
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Output Conductanced |
VGS = 0 V |
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f = 400 MHz |
65 |
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100 |
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100 |
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Common-Source |
Yis(RE) |
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f = 100 MHz |
0.05 |
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0.1 |
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mS |
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Input Conductanced |
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f = 400 MHz |
0.8 |
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1 |
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1 |
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VDS |
= 15 V, ID |
= 1 mA |
20 |
16 |
25 |
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f = 100 MHz |
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Common-Source Power Gaind |
G |
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f = 100 MHz |
21 |
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18 |
30 |
18 |
30 |
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ps |
VDS = 15 V |
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ID = 4 mA |
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f = 400 MHz |
13 |
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10 |
20 |
10 |
20 |
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VDS |
= 15 V, VGS = 0 V |
0.3 |
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2.5 |
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2.5 |
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2.5 |
dB |
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RG = 1 MW, f = 1 kHz |
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Noise Figured |
NF |
VDS |
= 15 V, ID = 1 mA |
2 |
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3 |
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RG = 1 kW, f = 100 MHz |
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VDS = 15 V |
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f = 100 MHz |
1 |
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2 |
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ID = 4 mA |
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f = 400 MHz |
2.5 |
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4 |
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4 |
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RG = 1 kW |
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www.vishay.com |
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Document Number: 70246 |
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2 |
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S-50148—Rev. G, 24-Jan-05 |
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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SST5484 |
SST5485 |
SST5486 |
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Typb |
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source |
V(BR)GSS |
IG = −1 mA , VDS = 0 V |
−35 |
−25 |
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−25 |
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−25 |
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Breakdown Voltage |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = 15 V, ID = 10 nA |
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−0.3 |
−3 |
−0.5 |
−4 |
−2 |
−6 |
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Saturation Drain Currentb |
IDSS |
VDS = 15 V, VGS = 0 V |
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1 |
5 |
4 |
10 |
8 |
20 |
mA |
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Gate Reverse Current |
IGSS |
VGS = −20 V, VDS = 0 V |
−0.002 |
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−1 |
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−1 |
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−1 |
nA |
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TA = 100_C |
−0.2 |
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−200 |
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−200 |
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−200 |
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Gate Operating Currentc |
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I |
V |
DG |
= 10 V, I = 1 mA |
−20 |
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pA |
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G |
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D |
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Gate-Source |
VGS(F) |
IG = 10 mA , VDS = 0 V |
0.8 |
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V |
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Forward Voltagec |
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Dynamic |
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Common-Source |
gfs |
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3 |
6 |
3.5 |
7 |
4 |
8 |
mS |
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Forward TransconductanceNO TAG |
VDS |
= 15 V, VGS = 0 V |
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Common-Source |
gos |
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f = 1 kHz |
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50 |
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60 |
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75 |
mS |
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Output ConductanceNO TAG |
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Common-Source |
Ciss |
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2.2 |
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Input Capacitance |
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Common-Source |
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VDS = 15 V, VGS = 0 V |
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Reverse Transfer |
Crss |
0.7 |
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pF |
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f = 1 MHz |
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Capacitance |
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Common-Source |
Coss |
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1 |
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Output Capacitance |
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Equivalent Input |
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VDS |
= 15 V, VGS = 0 V |
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nV⁄ |
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en |
10 |
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Noise Voltagec |
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f = 100 Hz |
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√Hz |
High-Frequency
Common-Source |
Yfs |
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f = 100 MHz |
5.5 |
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Transconductance |
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f = 400 MHz |
5.5 |
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f = 100 MHz |
45 |
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Common-Source |
Yos |
VDS = 15 V |
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Output Conductance |
VGS = 0 V |
f = 400 MHz |
65 |
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Common-Source |
Yis |
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f = 100 MHz |
0.05 |
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Input Conductance |
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f = 400 MHz |
0.8 |
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VDS = 15 V, ID = 1 mA |
20 |
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f = 100 MHz |
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Common-Source |
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Gps |
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Power Gain |
VDS = 15 V |
f = 100 MHz |
21 |
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ID = 4 mA |
f = 400 MHz |
13 |
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VDS |
= 15 V, VGS = 0 V |
0.3 |
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RG |
= 1 MW, f = 1 kHz |
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VDS |
= 15 V, ID = 1 mA |
2 |
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Noise Figure |
NF |
RG = 1 kW, f = 100 MHz |
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VDS = 15 V |
f = 100 MHz |
1 |
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ID = 4 mA |
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f = 400 MHz |
2.5 |
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RG = 1 kW |
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Notes
a.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b.Pulse test: PW v300 ms duty cycle v3%.
c.This parameter not registered with JEDEC.
d.Not a production test.
mS
mS
mS
dB
NH
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 70246 |
www.vishay.com |
S-50148—Rev. G, 24-Jan-05 |
3 |