Vishay SST5484, SST5485, SST5486, 2N5484, 2N5485 Schematic [ru]

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2N/SST5484 Series

Vishay Siliconix

N-Channel JFETs

2N5484 SST5484

2N5485 SST5485

2N5486 SST5486

PRODUCT SUMMARY

Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

2N/SST5484

−0.3 to −3

−25

3

1

 

 

 

 

 

2N/SST5485

−0.5 to −4

−25

3.5

4

 

 

 

 

 

2N/SST5486

−2 to −6

−25

4

8

 

 

 

 

 

FEATURES

BENEFITS

APPLICATIONS

D Excellent High-Frequency Gain:

D Wideband High Gain

D High-Frequency Amplifier/Mixer

Gps 13 dB (typ) @ 400 MHz − 5485/6

D Very High System Sensitivity

D Oscillator

D Very Low Noise: 2.5 dB (typ) @

D High Quality of Amplification

D Sample-and-Hold

400 MHz − 5485/6

D High-Speed Switching Capability

D Very Low Capacitance Switches

D Very Low Distortion

D High Low-Level Signal Amplification

 

D High AC/DC Switch Off-Isolation

 

 

 

DESCRIPTION

The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz.

The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information).

TO-226AA (TO-92)

D 1

S 2

G 3

Top View 2N5484 2N5485 2N5486

For applications information see AN102 and AN105.

TO-236 (SOT-23

)

D 1

3 G

S 2

Top View

SST5484 (H4)*

SST5485 (H5)*

SST5486 (H6)*

*Marking Code for TO-236

Document Number: 70246

www.vishay.com

S-50148—Rev. G, 24-Jan-05

1

2N/SST5484 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C

Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350 mW

Notes

 

a.Derate 2.8 mW/_C above 25_C

SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N5484

2N5485

2N5486

 

 

 

 

 

 

 

Typa

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

V(BR)GSS

IG = −1 mA , VDS = 0 V

−35

−25

 

−25

 

−25

 

 

Breakdown Voltage

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Cutoff Voltage

VGS(off)

VDS = 15 V, ID = 10 nA

 

−0.3

−3

−0.5

−4

−2

−6

 

Saturation Drain Currentb

I

V

DS

= 15 V, V

= 0 V

 

1

5

4

10

8

20

mA

 

DSS

 

 

GS

 

 

 

 

 

 

 

 

Gate Reverse Current

IGSS

VGS = −20 V, VDS = 0 V

−0.002

 

−1

 

−1

 

−1

nA

 

 

 

 

TA = 100_C

−0.2

 

−200

 

−200

 

−200

 

 

 

 

 

 

 

 

 

 

 

 

Gate Operating Currentc

 

I

V

DG

= 10 V, I

= 1 mA

−20

 

 

 

 

 

 

pA

 

 

G

 

 

D

 

 

 

 

 

 

 

 

 

Gate-Source

VGS(F)

IG = 10 mA , VDS = 0 V

0.8

 

 

 

 

 

 

V

Forward Voltagec

 

 

 

 

 

 

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gfs

 

 

 

 

 

 

3

6

3.5

7

4

8

mS

Forward TransconductanceNO TAG

VDS

= 15 V, VGS = 0 V

 

Common-Source

gos

 

 

f = 1 kHz

 

 

50

 

60

 

75

mS

Output ConductanceNO TAG

 

 

 

 

 

 

 

 

 

Common-Source

Ciss

 

 

 

 

 

2.2

 

5

 

5

 

5

 

Input Capacitance

 

 

 

 

 

 

 

 

 

Common-Source

Crss

VDS = 15 V, VGS = 0 V

0.7

 

1

 

1

 

1

pF

Reverse Transfer Capacitance

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Coss

 

 

 

 

 

1

 

2

 

2

 

2

 

Output Capacitance

 

 

 

 

 

 

 

 

 

Equivalent Input

 

 

 

VDS

= 15 V, VGS = 0 V

 

 

 

 

 

 

 

nV

 

en

10

 

 

 

 

 

 

Noise Voltagec

 

 

 

f = 100 Hz

 

 

 

 

 

 

Hz

High-Frequency

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Yfs(RE)

 

 

 

 

f = 100 MHz

5.5

2.5

 

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

 

 

 

d

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 400 MHz

5.5

 

 

3

 

3.5

 

Transconductance

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Yos(RE)

VDS = 15 V

 

f = 100 MHz

45

 

75

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

Output Conductanced

VGS = 0 V

 

f = 400 MHz

65

 

 

 

100

 

100

Common-Source

Yis(RE)

 

 

 

 

f = 100 MHz

0.05

 

0.1

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

 

 

 

Input Conductanced

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 400 MHz

0.8

 

 

 

1

 

1

 

 

 

 

VDS

= 15 V, ID

= 1 mA

20

16

25

 

 

 

 

 

 

 

 

 

 

 

f = 100 MHz

 

 

 

 

 

 

 

 

Common-Source Power Gaind

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 100 MHz

21

 

 

18

30

18

30

 

 

 

ps

VDS = 15 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ID = 4 mA

 

f = 400 MHz

13

 

 

10

20

10

20

 

 

 

 

 

VDS

= 15 V, VGS = 0 V

0.3

 

2.5

 

2.5

 

2.5

dB

 

 

 

 

RG = 1 MW, f = 1 kHz

 

 

 

 

 

 

 

Noise Figured

NF

VDS

= 15 V, ID = 1 mA

2

 

3

 

 

 

 

 

RG = 1 kW, f = 100 MHz

 

 

 

 

 

 

 

 

 

 

 

 

VDS = 15 V

 

f = 100 MHz

1

 

 

 

2

 

2

 

 

 

 

 

ID = 4 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 400 MHz

2.5

 

 

 

4

 

4

 

 

 

 

 

RG = 1 kW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

www.vishay.com

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 70246

2

 

 

 

 

 

 

 

 

 

 

 

 

S-50148—Rev. G, 24-Jan-05

Vishay SST5484, SST5485, SST5486, 2N5484, 2N5485 Schematic

2N/SST5484 Series

Vishay Siliconix

SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SST5484

SST5485

SST5486

 

 

 

 

 

 

 

Typb

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

V(BR)GSS

IG = −1 mA , VDS = 0 V

−35

−25

 

−25

 

−25

 

 

Breakdown Voltage

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Cutoff Voltage

VGS(off)

VDS = 15 V, ID = 10 nA

 

−0.3

−3

−0.5

−4

−2

−6

 

Saturation Drain Currentb

IDSS

VDS = 15 V, VGS = 0 V

 

1

5

4

10

8

20

mA

Gate Reverse Current

IGSS

VGS = −20 V, VDS = 0 V

−0.002

 

−1

 

−1

 

−1

nA

 

 

 

TA = 100_C

−0.2

 

−200

 

−200

 

−200

 

 

 

 

 

 

 

 

 

 

 

Gate Operating Currentc

 

I

V

DG

= 10 V, I = 1 mA

−20

 

 

 

 

 

 

pA

 

 

G

 

 

D

 

 

 

 

 

 

 

 

Gate-Source

VGS(F)

IG = 10 mA , VDS = 0 V

0.8

 

 

 

 

 

 

V

Forward Voltagec

 

 

 

 

 

 

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gfs

 

 

 

 

 

3

6

3.5

7

4

8

mS

Forward TransconductanceNO TAG

VDS

= 15 V, VGS = 0 V

 

Common-Source

gos

 

 

f = 1 kHz

 

 

50

 

60

 

75

mS

Output ConductanceNO TAG

 

 

 

 

 

 

 

 

Common-Source

Ciss

 

 

 

 

2.2

 

 

 

 

 

 

 

Input Capacitance

 

 

 

 

 

 

 

 

 

 

 

Common-Source

 

 

 

VDS = 15 V, VGS = 0 V

 

 

 

 

 

 

 

 

Reverse Transfer

Crss

0.7

 

 

 

 

 

 

pF

 

 

f = 1 MHz

 

 

 

 

 

 

Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Coss

 

 

 

 

1

 

 

 

 

 

 

 

Output Capacitance

 

 

 

 

 

 

 

 

 

 

 

Equivalent Input

 

 

 

VDS

= 15 V, VGS = 0 V

 

 

 

 

 

 

 

nV

 

en

10

 

 

 

 

 

 

Noise Voltagec

 

 

 

f = 100 Hz

 

 

 

 

 

 

Hz

High-Frequency

Common-Source

Yfs

 

 

f = 100 MHz

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Transconductance

 

 

f = 400 MHz

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 100 MHz

45

 

 

 

 

 

 

Common-Source

Yos

VDS = 15 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Conductance

VGS = 0 V

f = 400 MHz

65

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Yis

 

 

f = 100 MHz

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Conductance

 

 

f = 400 MHz

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS = 15 V, ID = 1 mA

20

 

 

 

 

 

 

 

 

 

f = 100 MHz

 

 

 

 

 

 

Common-Source

 

 

 

 

 

 

 

 

 

Gps

 

 

 

 

 

 

 

 

 

 

Power Gain

VDS = 15 V

f = 100 MHz

21

 

 

 

 

 

 

 

 

ID = 4 mA

f = 400 MHz

13

 

 

 

 

 

 

 

 

VDS

= 15 V, VGS = 0 V

0.3

 

 

 

 

 

 

 

 

RG

= 1 MW, f = 1 kHz

 

 

 

 

 

 

 

 

 

VDS

= 15 V, ID = 1 mA

2

 

 

 

 

 

 

Noise Figure

NF

RG = 1 kW, f = 100 MHz

 

 

 

 

 

 

 

 

 

VDS = 15 V

f = 100 MHz

1

 

 

 

 

 

 

 

 

ID = 4 mA

 

 

 

 

 

 

 

 

 

 

f = 400 MHz

2.5

 

 

 

 

 

 

 

 

RG = 1 kW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

a.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

b.Pulse test: PW v300 ms duty cycle v3%.

c.This parameter not registered with JEDEC.

d.Not a production test.

mS

mS

mS

dB

NH

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Document Number: 70246

www.vishay.com

S-50148—Rev. G, 24-Jan-05

3

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