2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391 PN4391 SST4391
2N4392 PN4392 SST4392
2N4393 PN4393 SST4393
PRODUCT SUMMARY
Part Number |
VGS(off) (V) |
rDS(on) Max (W) |
ID(off) Typ (pA) |
tON Typ (ns) |
2N/PN/SST4391 |
–4 to –10 |
30 |
5 |
4 |
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2N/PN/SST4392 |
–2 to –5 |
60 |
5 |
4 |
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2N/PN/SST4393 |
–0.5 to –3 |
100 |
5 |
4 |
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FEATURES
DLow On-Resistance: 4391<30 W
DFast Switching—t ON: 4 ns
DHigh Off-Isolation: ID(off) with Low Leakage
DLow Capacitance: < 3.5 pF
DLow Insertion Loss
DESCRIPTION
BENEFITS |
APPLICATIONS |
D Low Error Voltage |
D Analog Switches |
D High-Speed Analog Circuit Performance |
D Choppers |
D Negligible “Off-Error,” Excellent Accuracy |
D Sample-and-Hold |
D Good Frequency Response, Low Glitches |
D Normally “On” Switches |
D Eliminates Additional Buffering |
D Current Limiters |
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D Commutators |
The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet.
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TO-206AA |
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(TO-18) |
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TO-226AA |
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(TO-92) |
TO-236 |
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S |
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(SOT-23) |
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D |
1 |
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1 |
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3 |
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D |
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G and Case |
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Top View |
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Top View |
Top View |
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2N4391 |
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PN4391 |
SST4391 (CA)* |
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2N4392 |
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PN4392 |
SST4392 (CB)* |
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2N4393 |
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PN4393 |
SST4393 (CC)* |
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*Marking Code for TO-236 |
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For applications information see AN104 and AN106
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Document Number: 70241 |
www.vishay.com |
S-04028—Rev. F, 04-Jan-01 |
7-1 |
2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
Power Dissipation : (2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW
(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW
Notes
a.Derate 10 mW/_C above 25_C
b.Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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4391 |
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4392 |
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4393 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
Min |
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Max |
Min |
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Max |
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Min |
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Max |
Unit |
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Static |
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Gate-Source |
V(BR)GSS |
IG = –1 mA, VDS = 0 V |
–55 |
–40 |
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–40 |
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–40 |
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Breakdown Voltage |
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V |
Gate-Source |
VGS(off) |
VDS = 20 V |
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2N/PN: ID = 1 nA |
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–4 |
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–10 |
–2 |
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–5 |
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–0.5 |
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–3 |
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Cutoff Voltage |
VDS = 15 V |
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SST: ID = 10 nA |
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2N |
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150 |
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75 |
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5 |
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30 |
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Saturation Drain |
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IDSS |
VDS = 20 V, VGS = 0 V |
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PN |
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150 |
25 |
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60 |
mA |
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Currentb |
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SST |
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50 |
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25 |
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VGS = –20 V |
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2N/SST |
–5 |
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–100 |
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–100 |
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–100 |
pA |
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PN |
–5 |
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–1000 |
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–1000 |
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–1000 |
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VDS = 0 V |
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Gate Reverse Current |
I |
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2N: TA = 150_C |
–13 |
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–200 |
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–200 |
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–200 |
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GSS |
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PN: TA = 100_C |
–1 |
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–200 |
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–200 |
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–200 |
nA |
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SST: TA = 125_C |
–3 |
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Gate Operating Current |
IG |
VDG = 15 V, ID = 10 mA |
–5 |
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2N: VGS = –5 V |
5 |
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100 |
pA |
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2N: VGS = –7 V |
5 |
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100 |
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VDS = 20 V |
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2N: VGS = –12 V |
5 |
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100 |
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PN: VGS = –5 V |
0.005 |
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1 |
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PN: VGS = –7 V |
0.005 |
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1 |
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nA |
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PN: VGS = –12 V |
0.005 |
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SST VDS = 10 V, VGS = –10 V |
5 |
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100 |
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100 |
pA |
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Drain Cutoff Current |
ID(off) |
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2N: V |
= –5 V |
13 |
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200 |
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GS |
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VDS = 20 V |
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2N: VGS |
= –7 V |
13 |
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200 |
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TA = 150_C |
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2N: VGS = –12 V |
13 |
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200 |
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PN: VGS = –5 V |
1 |
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200 |
nA |
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VDS = 20 V |
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PN: VGS |
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= –7 V |
1 |
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200 |
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TA = 100_C |
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PN: VGS = –12 V |
1 |
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200 |
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VDS = 10 V |
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SST: VGS |
= –10 V |
3 |
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TA = 125_C |
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ID = 3 mA |
0.25 |
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0.4 |
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Drain-Source |
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VDS(on) |
VGS = 0 V |
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ID = 6 mA |
0.3 |
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0.4 |
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V |
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On-Voltage |
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ID = 12 mA |
0.35 |
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0.4 |
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Drain-Source |
rDS(on) |
VGS = 0 V, ID = 1 mA |
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30 |
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60 |
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100 |
W |
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On-Resistance |
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Gate-Source |
VGS(F) |
IG = 1 mA |
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2N |
0.7 |
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1 |
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1 |
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1 |
V |
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Forward Voltage |
VDS = 0 V |
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PN/SST |
0.7 |
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www.vishay.com |
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Document Number: 70241 |
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7-2 |
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S-04028— Rev. F, 04-Jan-01 |
2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Limits |
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4391 |
4392 |
4393 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
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Min |
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Max |
Min |
Max |
Min |
Max |
Unit |
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Dynamic |
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Common-Source |
gfs |
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mS |
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Forward Transconductance |
VDS = 20 V, ID = 1 mA, f = 1 kHz |
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Common-Source |
gos |
25 |
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mS |
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Output Conductance |
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Drain-Source |
rDS(on) |
VGS = 0 V, ID = 0 mA , f = 1 kHz |
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30 |
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60 |
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100 |
W |
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On-Resistance |
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2N |
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Common-Source |
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VDS = 20 V, VGS |
= 0 V |
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Ciss |
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PN |
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Input Capacitance |
f = 1 MHz |
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SST |
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2N: VGS = –5 V |
3.3 |
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3.5 |
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2N: VGS = –7 V |
3.2 |
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3.5 |
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2N: VGS = –12 V |
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pF |
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Common-Source |
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PN: VGS = –5 V |
3.5 |
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VDS = 0 V |
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Reverse Transfer |
Crss |
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PN: VGS = –7 V |
3.4 |
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f = 1 MHz |
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Capacitance |
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PN: VGS = –12 V |
3.0 |
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SST: VGS = –5 V |
3.6 |
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SST: VGS = –7 V |
3.5 |
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SST: VGS = –12 V |
3.1 |
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Equivalent Input |
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VDS = 10 V, ID = 10 mA |
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nV⁄ |
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Noise Voltage |
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f = 1 kHz |
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√ Hz |
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Switching |
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td(on) |
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2N/PN |
2 |
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Turn-On Time |
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SST |
2 |
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tr |
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2N/PN |
2 |
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5 |
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5 |
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5 |
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VDD = 10 V |
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SST |
2 |
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VGS(H) = 0 V |
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ns |
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2N/PN |
6 |
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20 |
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35 |
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50 |
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td(off) |
See Switching Circuit |
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Turn-Off Time |
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SST |
6 |
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tf |
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2N/PN |
13 |
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15 |
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20 |
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30 |
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SST |
13 |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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NCB |
b.Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70241 |
www.vishay.com |
S-04028— Rev. F, 04-Jan-01 |
7-3 |