Vishay SST4117, SST4118, SST4119, 2N4117A, 2N4118A Schematic [ru]

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Vishay SST4117, SST4118, SST4119, 2N4117A, 2N4118A Schematic

2N/PN/SST4117A Series

Vishay Siliconix

N-Channel JFETs

2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119

PRODUCT SUMMARY

Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

4117

−0.6 to −1.8

−40

70

30

 

 

 

 

 

4118

−1 to −3

40

80

80

 

 

 

 

 

4119

−2 to −6

−40

100

200

 

 

 

 

 

FEATURES

DUltra-Low Leakage: 0.2 pA

DVery Low Current/Voltage Operation

DUltrahigh Input Impedance

DLow Noise

BENEFITS

APPLICATIONS

D Insignificant Signal Loss/Error Voltage

D High-Impedance Transducer

with High-Impedance Source

Amplifiers

D Low Power Consumption (Battery)

D Smoke Detector Input

D Maximum Signal Output, Low Noise

D Infrared Detector Amplifier

D High Sensitivity to Low-Level Signals

D Precision Test Equipment

DESCRIPTION

The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers.

The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information).

TO-206AF

TO-226AA

TO-236

(TO-72)

(TO-92)

(SOT-23)

S

C

14

23

D G

Top View 2N4117A 2N4118A 2N4119A

For applications information see AN105.

D

1

 

 

 

 

D

1

S

2

3 G

 

S

2

G

3

 

 

 

 

Top View

Top View

 

PN4117A

SST4117 (T7)*

 

PN4118A

SST4118 (T8)*

 

PN4119A

SST4119 (T9)*

*Marking Code for TO-236

Document Number: 70239

www.vishay.com

S-41231—Rev. G, 28-Jun-04

1

2N/PN/SST4117A Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−40V

Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C

Operating Junction Temperature :

(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C

Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Power Dissipation (case 25_C) :

(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW

(PN, SST Prefix)b . . . . . . . . . . . . . . . .

350 mW

Notes

a.Derate 2 mW/_C above 25_C

b.Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4117

4118

4119

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

Typa

 

Min

Max

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

V(BR)GSS

IG = −1 mA , VDS = 0 V

−70

 

−40

 

40

 

−40

 

 

Breakdown Voltage

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Cutoff Voltage

VGS(off)

VDS = 10 V, ID = 1 nA

 

 

−0.6

−1.8

−1

−3

−2

−6

 

Saturation Drain Current

IDSS

VDS = 10 V, VGS = 0 V

 

 

30

90

80

240

200

600

mA

 

 

 

 

 

VGS = −20 V

 

 

 

 

−0.2

 

 

−1

 

−1

 

−1

pA

 

 

 

 

 

VDS = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS = −20 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS

= 0 V

 

 

 

 

−0.4

 

 

−2.5

 

−2.5

 

−2.5

nA

Gate Reverse Current

IGSS

TA = 150_C

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS = −10 V

 

 

 

PN

−0.2

 

 

−1

 

−1

 

−1

pA

 

 

 

 

 

 

 

 

SST

−0.2

 

 

−10

 

−10

 

−10

 

 

 

 

 

VDS = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS = −10 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS

= 0 V

 

 

 

PN/SST

−0.03

 

 

−2.5

 

−2.5

 

−2.5

nA

 

 

 

 

 

TA = 100_C

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate Operating Currentb

 

 

I

V

DG

= 15 V, I

 

= 30 mA

−0.2

 

 

 

 

 

 

 

 

 

 

 

G

 

 

D

 

 

 

 

 

 

 

 

 

 

 

pA

Drain Cutoff Currentb

I

 

 

 

V

DS

= 10 V, V

 

 

= −8 V

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D(off)

 

GS

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Forward Voltageb

V

GS(F)

I = 1 mA , V

DS

= 0 V

0.7

 

 

 

 

 

 

 

V

 

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

 

gfs

 

 

 

 

 

 

 

 

 

 

70

210

80

250

100

330

 

Forward Transconductance

 

VDS

= 10 V, VGS = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

 

 

 

 

 

 

 

 

 

 

 

 

 

gos

 

 

 

f = 1 kHz

 

 

 

 

 

3

 

5

 

10

 

Output Conductance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Ciss

 

 

 

 

 

 

 

2N/PN

1.2

 

 

3

 

3

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

VDS = 10 V

 

 

 

SST

1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

pF

 

 

 

 

 

 

 

 

2N/PN

0.3

 

 

1.5

 

1.5

 

1.5

Common-Source

Crss

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

 

 

 

 

 

 

 

SST

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Equivalent Input Noise Voltageb

 

 

 

 

VDS

= 10 V, VGS = 0 V

15

 

 

 

 

 

 

 

nV

 

 

e

n

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz

 

 

 

 

 

 

 

 

 

 

Hz

Notes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

 

 

 

 

 

 

NT

b.This parameter not registered with JEDEC.

www.vishay.com

Document Number: 70239

2

S-41231—Rev. G, 28-Jun-04

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