Standard Products
UT28F64 Radiation-Hardened 8K x 8 PROM
Data Sheet
August 2001
FEATURES
qProgrammable, read-only, asynchronous, radiationhardened, 8K x 8 memory
-Supported by industry standard programmer
q35ns and 45ns maximum address access time (-55 oC to +125 oC)
qTTL compatible input and TTL/CMOS compatible output levels
qThree-state data bus
qLow operating and standby current
-Operating: 100mA maximum @28.6MHz ∙ Derating: 3mA/MHz
-Standby: 500μA maximum (post-rad)
qRadiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
-Total dose: 1E6 rad(Si)
-LETTH(0.25) ~ 100 MeV-cm2/mg
-SEL Immune >128 MeV-cm 2/mg
-Saturated Cross Section cm2 per bit, 1.0E-11
-1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
A(12:0) |
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DECODER |
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CE
PE
CONTROL
LOGIC
OE
-Memory cell LET threshold: >128 MeV-cm 2/mg
qQML Q & V compliant part
-AC and DC testing at factory
qPackaging options:
-28-pin 100-mil center DIP (0.600 x 1.4)
-28-lead 50-mil center flatpack (0.490 x 0.74)
qVDD: 5.0 volts + 10%
qStandard Microcircuit Drawing 5962-96873
PRODUCT DESCRIPTION
The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,
8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiationhardness, fast access time, and low power consumption make the UT28F64 ideal for high speed systems designed for operation in radiation environments.
MEMORY
ARRAY
SENSE AMPLIFIER
DQ(7:0)
PROGRAMMING
Figure 1. PROM Block Diagram
1
DEVICE OPERATION
The UT28F64 has three control inputs: Chip Enable (CE), Program Enable (PE), and Output Enable (OE); thirteen address inputs, A(12:0); and eight bidirectional data lines, DQ(7:0). CE is the device enable input that controls chip selection, active, and standby modes. AssertingCE causes I DD to rise to its active value and decodes the thirteen address inputs to select one of 8,192 words in the memory. PE controls program and read operations. During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
NC |
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1 |
28 |
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VDD |
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A12 |
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2 |
27 |
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PE |
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A7 |
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3 |
26 |
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NC |
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A6 |
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4 |
25 |
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A8 |
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A5 |
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5 |
24 |
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A9 |
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A4 |
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6 |
23 |
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A11 |
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A3 |
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7 |
22 |
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OE |
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A2 |
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8 |
21 |
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A10 |
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A1 |
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20 |
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CE |
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A0 |
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10 |
19 |
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DQ7 |
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DQ0 |
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11 |
18 |
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DQ6 |
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DQ1 |
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12 |
17 |
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DQ5 |
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DQ2 |
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13 |
16 |
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DQ4 |
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VSS |
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14 |
15 |
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DQ3 |
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PIN NAMES
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A(12:0) |
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Address |
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CE |
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Chip Enable |
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OE |
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Output Enable |
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PE |
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Program Enable |
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DQ(7:0) |
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Data Input/Data Output |
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Table 1. Device Operation Truth Table 1 |
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OE |
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PE |
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CE |
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I/O MODE |
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MODE |
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X |
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1 |
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1 |
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Three-state |
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Standby |
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0 |
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1 |
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0 |
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Data Out |
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Read |
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1 |
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0 |
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0 |
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Data In |
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Program |
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1 |
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1 |
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0 |
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Three-state |
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Read 2 |
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Notes:
1.“X” is defined as a “don’t care” condition.
2.Device active; outputs disabled.
ABSOLUTE MAXIMUM RATINGS 1
(Referenced to VSS)
SYMBOL |
PARAMETER |
LIMITS |
UNITS |
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VDD |
DC supply voltage |
-0.3 to 7.0 |
V |
VI/O |
Voltage on any pin |
-0.5 to (VDD + 0.5) |
V |
TSTG |
Storage temperature |
-65 to +150 |
°C |
PD |
Maximum power dissipation |
1.5 |
W |
TJ |
Maximum junction temperature |
+175 |
°C |
ΘJC |
Thermal resistance, junction-to-case 2 |
3.3 |
°C/W |
II |
DC input current |
±10 |
mA |
Notes:
1 . Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. 2 . Test per MIL-STD-883, Method 1012, infinite heat sink.
2
RECOMMENDED OPERATING CONDITIONS
SYMBOL |
PARAMETER |
LIMITS |
UNITS |
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VDD |
Positive supply voltage |
4.5 to 5.5 |
V |
TC |
Case temperature range |
-55 to +125 |
°C |
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VIN |
DC input voltage |
0 to VDD |
V |
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL |
PARAMETER |
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CONDITION |
MINIMUM |
MAXIMUM |
UNIT |
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VIH |
High-level input voltage |
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(TTL) |
2.4 |
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V |
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VIL |
Low-level input voltage |
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(TTL) |
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0.8 |
V |
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VOL1 |
Low-level output voltage |
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IOL = 4.8mA, V DD = 4.5V (TTL) |
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0.4 |
V |
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VOL2 |
Low-level output voltage |
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IOL = 200mA, VDD = 4.5V (CMOS) |
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VSS + 0.05 |
V |
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VOH1 |
High-level output voltage |
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IOH = -400mA, VDD = 4.5V (TTL) |
2.4 |
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V |
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IOH = -2.0mA |
3.5 |
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VOH2 |
High-level output voltage |
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IOH = -200mA VDD = 4.5V (CMOS) |
4.45 |
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V |
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I = -100mA |
VDD - 0.3 |
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OH |
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C |
1 |
Input capacitance |
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¦ = 1MHz, V DD = 5.0V |
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15 |
pF |
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IN |
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CIO |
1, 4 |
Bidirectional I/O capacitance |
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¦ = 1MHz, V DD = 5.0V |
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15 |
pF |
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VOUT = 0V |
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IIN |
Input leakage current |
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VIN = 0V to VDD |
-1 |
1 |
mA |
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IOZ |
Three-state output leakage |
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VO = 0V to VDD |
-10 |
10 |
mA |
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current |
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VDD = 5.5V |
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OE = 5.5V |
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I |
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2,3 |
Short-circuit output current |
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VDD = 5.5V, VO = V DD |
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90 |
mA |
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OS |
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VDD = 5.5V, VO = 0V |
-90 |
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mA |
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I |
(OP)5 |
Supply current operating |
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TTL input levels (IOUT = 0), |
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DD |
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@28.6MHz (35ns product) |
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VIL = 0.2V |
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100 |
mA |
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@22.2MHz (45ns product) |
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85 |
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VDD, PE = 5.5V |
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IDD(SB) |
Supply current standby |
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CMOS input levels , |
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500 |
mA |
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post-rad |
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VIL = V SS to 0.25V |
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CE = VDD -025, VIH = V DD -0.25V |
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Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1.Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2.Supplied as a design limit but not guaranteed or tested.
3.Not more than one output may be shorted at a time for maximum duration of one second.
4.Functional test.
5.Derates at 2.5mA/MHz.
3