TEXAS INSTRUMENTS XTR115, XTR116 Technical data

0 (0)

XTR116 XTR115

XTR115

XTR116

SBOS124A – JANUARY 2000 – REVISED NOVEMBER 2003

4-20mA CURRENT LOOP TRANSMITTERS

FEATURES

APPLICATIONS

LOW QUIESCENT CURRENT: 200 A

5V REGULATOR FOR EXTERNAL CIRCUITS

VREF FOR SENSOR EXCITATION:

XTR115: 2.5V

XTR116: 4.096V

LOW SPAN ERROR: 0.05%

LOW NONLINEARITY ERROR: 0.003%

WIDE LOOP SUPPLY RANGE: 7.5V to 36V

SO-8 PACKAGE

DESCRIPTION

The XTR115 and XTR116 are precision current output converters designed to transmit analog 4-to-20mA signals over an industry standard current loop. They provide accurate current scaling and output current limit functions.

The on-chip voltage regulator (5V) can be used to power external circuitry. A precision on-chip VREF (2.5V for XTR115 and 4.096V for XTR116) can be

2-WIRE, 4-20mA CURRENT LOOP TRANSMITTER

SMART TRANSMITTER

INDUSTRIAL PROCESS CONTROL

TEST SYSTEMS

COMPATIBLE WITH HART MODEM

CURRENT AMPLIFIER

VOLTAGE-TO-CURRENT AMPLIFIER

used for offsetting or to excite transducers. A current return pin (IRET) senses any current used in external circuitry to assure an accurate control of the output current.

The XTR115 is a fundamental building block of smart sensors using 4-to-20mA current transmission.

The XTR115 and XTR116 are specified for operation over the extended industrial temperature range, –40° C to +85° C.

 

 

 

XTR115

 

 

 

 

 

 

 

 

XTR116

 

 

 

 

 

+5V

 

VREG

 

 

+5V

V+

 

 

8

 

 

Regulator

7

 

 

 

 

 

 

 

 

XTR115: 2.5V

 

VREF

 

Voltage

 

 

 

 

XTR116: 4.096V

 

1

 

Reference

 

 

 

 

 

 

 

 

 

 

 

 

VLOOP

 

RIN

 

 

 

 

B

 

 

 

IIN

 

 

 

6

 

 

 

 

 

 

 

 

 

+

 

2

 

A1

 

 

 

RL

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN

 

 

 

 

 

E

 

 

 

 

 

 

 

5

 

 

 

 

3

 

 

 

RLIM

 

 

 

 

IRET

R1

 

R2

I

 

100 VIN

 

 

 

 

O

=

 

 

 

2.475kΩ

25Ω

 

RIN

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

I = 100 • IIN

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2000-2003, Texas Instruments Incorporated

Products conform to specifications per the terms of Texas Instruments

 

standard warranty. Production processing does not necessarily include

 

testing of all parameters.

 

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SPECIFICATIONS

At TA = +25° C, V+ = 24V, RIN = 20kΩ , and TIP29C external transistor, unless otherwise noted.

 

 

 

 

 

 

XTR115U

 

 

 

 

XTR115UA

 

 

 

 

 

 

 

 

XTR116U

 

 

 

 

XTR116UA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

CONDITIONS

MIN

 

TYP

 

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Current Equation

IO

 

 

 

IO = IIN • 100

 

 

 

 

 

 

 

Output Current, Linear Range

 

 

0.25

 

 

 

 

25

 

 

 

mA

Over-Scale Limit

ILIM

 

 

 

 

32

 

 

 

 

 

 

 

mA

Under-Scale Limit

IMIN

IREG = 0, IREF = 0

 

 

 

0.2

 

0.25

 

 

 

mA

SPAN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Span (Current Gain)

S

 

 

 

 

100

 

 

 

 

 

 

 

A/A

Error (1)

 

IIN = 250µ A to 25mA

 

 

 

± 0.05

 

±

0.2

 

 

± 0.4

%

vs Temperature

 

TA = –40° C to +85° C

 

 

 

± 3

 

± 20

 

 

 

ppm/° C

Nonlinearity

 

IIN = 250µ A to 25mA

 

 

 

± 0.003

 

±

0.01

 

 

± 0.02

%

INPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Offset Voltage (Op Amp)

VOS

IIN = 40µ A

 

 

 

± 100

 

±

250

 

 

± 500

µ V

vs Temperature

 

TA = –40° C to +85° C

 

 

 

± 0.7

 

 

± 3

 

 

± 6

µ V/° C

vs Supply Voltage, V+

 

V+ = 7.5V to 36V

 

 

 

± 0.1

 

 

± 2

 

 

 

µ V/V

Bias Current

IB

 

 

 

 

–35

 

 

 

 

 

 

 

nA

vs Temperature

 

 

 

 

 

150

 

 

 

 

 

 

 

pA/° C

Noise: 0.1Hz to 10Hz

en

 

 

 

 

0.6

 

 

 

 

 

 

 

µ Vp-p

DYNAMIC RESPONSE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Small Signal Bandwidth

 

CLOOP = 0, RL = 0

 

 

 

380

 

 

 

 

 

 

 

kHz

Slew Rate

 

 

 

 

 

3.2

 

 

 

 

 

 

 

mA/µ s

(2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

XTR115

 

 

 

 

 

2.5

 

 

 

 

 

 

 

V

XTR116

 

 

 

 

 

4.096

 

 

 

 

 

 

 

V

Voltage Accuracy

 

IREF = 0

 

 

 

± 0.05

 

±

0.25

 

 

± 0.5

%

vs Temperature

 

TA = –40° C to +85° C

 

 

 

± 20

 

± 35

 

 

± 75

ppm/° C

vs Supply Voltage, V+

 

V+ = 7.5V to 36V

 

 

 

± 1

 

± 10

 

 

 

ppm/V

vs Load

 

IREF = 0mA to 2.5mA

 

 

 

± 100

 

 

 

 

 

 

 

ppm/mA

Noise: 0.1Hz to 10Hz

 

 

 

 

 

10

 

 

 

 

 

 

 

µ Vp-p

Short-Circuit Current

 

 

 

 

 

16

 

 

 

 

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VREG

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Voltage

 

 

 

 

 

5

 

 

 

 

 

 

 

V

Voltage Accuracy

 

IREG = 0

 

 

 

± 0.05

 

±

0.1

 

 

 

V

vs Temperature

 

TA = –40° C to +85° C

 

 

 

± 0.1

 

 

 

 

 

 

 

mV/° C

vs Supply Voltage, V+

 

V+ = 7.5V to 36V

 

 

 

1

 

 

 

 

 

 

 

mV/V

vs Output Current

 

 

 

See

 

Typical Curves

 

 

 

 

 

 

Short-Circuit Current

 

 

 

 

 

12

 

 

 

 

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER SUPPLY

V+

 

 

 

 

 

 

 

 

 

 

 

 

 

Specified

 

 

 

 

 

+24

 

 

 

 

 

 

 

V

Voltage Range

 

 

+7.5

 

 

 

+36

 

 

 

V

Quiescent Current

 

 

 

 

 

200

 

250

 

 

 

µ A

Over Temperature, –40° C to +85° C

 

 

 

 

 

240

 

300

 

 

 

µ A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TEMPERATURE RANGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specification

 

 

–40

 

 

 

+85

 

 

 

° C

Operating

 

 

–55

 

 

 

+125

 

 

 

° C

Storage

 

 

–55

 

 

 

+125

 

 

 

° C

Thermal Resistance

θ JA

 

 

 

 

150

 

 

 

 

 

 

 

° C/W

Specifications the same as XTR115U and XTR116U.

NOTES: (1) Does not include initial error or TCR of RIN. (2) Voltage measured with respect to IRET pin.

2

XTR115, XTR116

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SBOS124A

PIN CONFIGURATION

Top View

 

 

 

SO-8

 

 

 

 

 

VREF

1

 

8

VREG

 

 

 

 

 

IIN

2

 

7

V+

 

 

 

 

 

IRET

3

 

6

B (Base)

 

 

 

 

 

IO

4

 

5

E (Emitter)

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

XTR115, XTR116

ABSOLUTE MAXIMUM RATINGS(1)

Power Supply, V+ (referenced to IO pin)

.......................................... 40V

Input Voltage (referenced to IRET pin) ........................................

0V to V+

Output Current Limit ...............................................................

Continuous

VREG, Short-Circuit ..................................................................

Continuous

VREF, Short-Circuit ..................................................................

Continuous

Operating Temperature ................................................

–55 ° C to +125° C

Storage Temperature Range .......................................

–55 ° C to +125° C

Lead Temperature (soldering, 10s) ..............................................

+300° C

Junction Temperature ...................................................................

+165° C

 

 

NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

3

SBOS124A

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TEXAS INSTRUMENTS XTR115, XTR116 Technical data

TYPICAL PERFORMANCE CURVES

At TA = +25° C, V+ = 24V, RIN = 20kΩ , and TIP29C external transistor, unless otherwise noted.

CURRENT GAIN vs FREQUENCY

 

40

 

 

(dB)

30

 

COUT = 0

 

 

RL = 0Ω

Gain

 

 

 

 

 

 

20

COUT = 10nF

 

RL

= 250Ω

 

 

10

10k

100k

1M

 

Frequency (Hz)

 

QUIESCENT CURRENT vs TEMPERATURE

 

260

 

 

 

 

 

 

 

 

( A)

240

 

 

 

 

 

 

 

 

 

 

 

 

(V+) = 36V

 

 

 

Current

 

 

 

 

 

 

 

220

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V+) = 24V

 

Quiescent

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

180

 

 

 

 

(V+) = 7.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

160

 

 

 

 

 

 

 

 

 

–75

–50

–25

0

25

50

75

100

125

 

 

 

 

Temperature (° C)

 

 

 

Reference Voltage (%)

REFERENCE VOLTAGE vs TEMPERATURE

0.1

0

–0.1

–0.2

–0.3

–75

–50

–25

0

25

50

75

100

125

 

 

 

Temperature (° C)

 

 

 

Over-Scale Current (mA)

OVER-SCALE CURRENT vs TEMPERATURE

34

With External Transistor

33

32

V+ = 36V

31

V+ = 7.5V

30

V+ = 24V

29

28

–75

–50

–25

0

25

50

75

100

125

 

 

 

Temperature (° C)

 

 

 

VREG VOLTAGE vs VREG CURRENT

 

5.5

 

 

 

 

 

 

+125° C

 

 

 

 

 

 

–55° C

 

 

 

 

 

(V)

 

 

 

 

 

 

Voltage

5.0

 

 

 

+25° C

–55° C

 

 

 

 

 

+25° C

 

 

 

 

 

REG

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

Sinking

 

Sourcing

 

 

+125° C

 

Current

 

Current

 

 

 

4.5

 

 

 

 

 

 

–1

0

1

2

3

4

IREG Current (mA)

4

XTR115, XTR116

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SBOS124A

APPLICATIONS INFORMATION

The XTR115 and XTR116 are identical devices except for the reference voltage output, pin 1. This voltage is available for external circuitry and is not used internally. Further discussions that apply to both devices will refer to the “XTR115/6.”

Figure 1 shows basic circuit connections with representative simplified input circuitry. The XTR115/6 is a two-wire current transmitter. Its input signal (pin 2) controls the output current. A portion of this current flows into the V+ power supply, pin 7. The remaining current flows in Q1. External input circuitry connected to the XTR115/6 can be powered from VREG or VREF. Current drawn from these terminals

must be returned to IRET, pin 3. This IRET pin is a “local ground” for input circuitry driving the XTR115/6.

The XTR115/6 is a current-input device with a gain of 100. A current flowing into pin 2 produces IO = 100 • IIN. The

input voltage at the IIN pin is zero (referred to the IRET pin). A voltage input is created with an external input resistor, as

shown. Common full-scale input voltages range from 1V

and upward. Full-scale inputs greater than 0.5V are recommend to minimize the effect of offset voltage and drift of A1.

EXTERNAL TRANSISTOR

The external transistor, Q1, conducts the majority of the fullscale output current. Power dissipation in this transistor can approach 0.8W with high loop voltage (40V) and 20mA output current. The XTR115/6 is designed to use an external transistor to avoid on-chip thermal-induced errors. Heat produced by Q1 will still cause ambient temperature changes that can affect the XTR115/6. To minimize these effects, locate Q1 away from sensitive analog circuitry, including XTR115/6. Mount Q1 so that heat is conducted to the outside of the transducer housing.

The XTR115/6 is designed to use virtually any NPN transistor with sufficient voltage, current and power rating. Case style and thermal mounting considerations often influence the choice for any given application. Several possible choices are listed in Figure 1. A MOSFET transistor will not improve the accuracy of the XTR115/6 and is not recommended.

 

 

 

 

XTR115

 

 

 

 

 

IREG

 

 

XTR116

 

 

 

IO

 

5V

VREG

 

+5V

V+

 

XTR115: 2.5V

 

 

 

 

 

 

8

 

Regulator

7

 

 

XTR116: 4.096V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IREF

 

(1)

Voltage

 

 

 

 

 

 

 

VREF

 

 

 

 

 

 

 

1

Reference

 

 

 

 

 

RIN

 

 

 

 

 

 

VLOOP

 

IIN

 

 

 

B

Q1

10nF

Input

20kΩ

IIN

 

 

6

VIN

 

 

 

 

 

Circuitry

 

 

2

 

 

 

 

RL

 

 

 

A1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

E

 

 

 

 

 

 

 

 

5

 

 

 

 

 

3

 

 

RLIM

 

 

 

All return current

IRET

R1

R2

 

 

 

 

from IREG and IREF

 

2.475kΩ

25Ω

I

 

 

 

 

 

 

 

 

O

 

 

 

 

 

 

 

 

4

 

I = 100 • IIN

For IO = 4mA to 20mA

 

 

 

 

 

 

IIN = 40µ A to 200µ A

 

 

 

 

 

 

 

With RIN = 20kΩ

NOTE: (1) See also Figure 5.

 

 

 

 

VIN = 0.8V to 4V

 

 

 

 

 

 

Possible choices for Q1 (see text).

 

 

 

 

 

 

 

 

TYPE

PACKAGE

2N4922

TO-225

TIP29C

TO-220

TIP31B

TO-220

 

 

FIGURE 1. Basic Circuit Connections.

XTR115, XTR116

5

 

SBOS124A

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