Texas Instruments OPA171AID, OPA171AIDBVT, OPA171AIDRLT, OPA2171AID, OPA2171AIDCUT Schematic [ru]

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OPA171

OPA2171

OPA4171

www.ti.com

SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

36V, Single-Supply, SOT553, General-Purpose

OPERATIONAL AMPLIFIERS

Value Line Series

Check for Samples: OPA171, OPA2171, OPA4171

FEATURES

Supply Range: +2.7V to +36V, ± 1.35V to ± 18V

Low Noise: 14nV/√Hz

Low Offset Drift: ± 0.3µ V/°C (typ)

RFI Filtered Inputs

Input Range Includes the Negative Supply

Input Range Operates to Positive Supply

Rail-to-Rail Output

Gain Bandwidth: 3MHz

Low Quiescent Current: 475µ A per Amplifier

High Common-Mode Rejection: 120dB (typ)

Low Input Bias Current: 8pA

Industry-Standard Packages:

8-Pin SOIC

8-Pin MSOP

14-Pin TSSOP

microPackages:

Single in SOT553

Dual in VSSOP-8

DESCRIPTION

The OPA171, OPA2171 and OPA4171 (OPAx171) are a family of 36V, single-supply, low-noise operational amplifiers with the ability to operate on supplies ranging from +2.7V (±1.35V) to +36V (±18V). These devices are available in micropackages and offer low offset, drift, and bandwidth with low quiescent current. The single, dual, and quad versions all have identical specifications for maximum design flexibility.

Unlike most op amps, which are specified at only one supply voltage, the OPAx171 family is specified from +2.7V to +36V. Input signals beyond the supply rails do not cause phase reversal. The OPAx171 family is stable with capacitive loads up to 300pF. The input can operate 100mV below the negative rail and within 2V of the top rail during normal operation. Note that these devices can operate with full rail-to-rail input 100mV beyond the top rail, but with reduced performance within 2V of the top rail.

The OPAx171 series of op amps are specified from –40°C to +125°C.

Package Footprint Comparison (to Scale)

APPLICATIONS

Tracking Amplifier in Power Modules

• Merchant Power Supplies

Transducer Amplifiers

• Bridge Amplifiers

• Temperature Measurements

• Strain Gauge Amplifiers

• Precision Integrators

• Battery-Powered Instruments

• Test Equipment

Product Family

Package Height Comparison (to Scale)

DEVICE

PACKAGE

 

 

OPA171

SOT553, SOT23-5, SO-8

 

 

OPA2171 (dual)

VSSOP-8, SO-8, MSOP-8

 

 

OPA4171 (quad)

TSSOP-14, SO-14

D (SO-8)

DBV (SOT23-5) DRL (SOT553)

Smallest Packaging for 36V Op Amps

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2010–2012, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

 

Instruments standard warranty. Production processing does not

 

necessarily include testing of all parameters.

 

OPA171

OPA2171

OPA4171

SBOS516D –SEPTEMBER 2010 –REVISED SEPTEMBER 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION (1)

 

 

PACKAGE

PACKAGE

 

TRANSPORT MEDIA,

PRODUCT

PACKAGE-LEAD

DESIGNATOR

MARKING

ORDERING NUMBER

QUANTITY

 

 

 

 

 

 

 

SOT553

DRL

DAP

OPA171AIDRLT

Tape and Reel, 250

 

 

 

 

OPA171AIDRLR

Tape and Reel, 4000

 

 

 

 

 

 

 

 

 

 

OPA171

SOT23-5

DBV

OSUI

OPA171AIDBVT

Tape and Reel, 250

 

 

OPA171AIDBVR

Tape and Reel, 3000

 

 

 

 

 

 

 

 

 

 

 

SO-8

D

O171A

OPA171AID

Rail, 75

 

 

 

 

OPA171AIDR

Tape and Reel, 2500

 

 

 

 

 

 

 

 

 

 

 

MSOP-8

DGK

OPMI

OPA2171AIDGK

Rail, 80

 

 

 

 

OPA2171AIDGKR

Tape and Reel, 2500

 

 

 

 

 

 

 

 

 

 

OPA2171

VSSOP-8

DCU

OPOC

OPA2171AIDCUT

Tape and Reel, 250

 

 

OPA2171AIDCUR

Tape and Reel, 3000

 

 

 

 

 

 

 

 

 

 

 

SO-8

D

2171A

OPA2171AID

Rail, 75

 

 

 

 

OPA2171AIDR

Tape and Reel, 2500

 

 

 

 

 

 

 

 

 

 

 

SO-14

D

OPA4171

OPA4171AID

Rail, 50

 

 

 

OPA4171

OPA4171AIDR

Tape and Reel, 2500

 

 

 

 

 

 

 

 

TSSOP-14

PW

OPA4171

OPA4171AIPW

Rail, 90

 

 

 

 

 

OPA4171AIPWR

Tape and Reel, 2000

 

 

 

 

 

 

 

 

 

 

(1)For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS(1)

Over operating free-air temperature range, unless otherwise noted.

 

 

OPAx171

UNIT

 

 

 

Supply voltage

±20

V

 

 

 

 

Signal input terminals

Voltage

(V–) – 0.5 to (V+) + 0.5

V

 

 

 

Current

±10

mA

 

 

 

 

 

Output short circuit(2)

Continuous

 

Operating temperature

–55 to +150

°C

 

 

 

Storage temperature

–65 to +150

°C

 

 

 

Junction temperature

+150

°C

 

 

 

 

ESD ratings:

Human body model (HBM)

4

kV

 

 

 

Charged device model (CDM)

750

V

 

 

 

 

 

(1)Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

(2)Short-circuit to ground, one amplifier per package.

2

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Copyright © 2010–2012, Texas Instruments Incorporated

Product Folder Links: OPA171 OPA2171 OPA4171

OPA171

OPA2171

OPA4171

www.ti.com

SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

ELECTRICAL CHARACTERISTICS

Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.

At TA = +25°C, VS = +2.7V to +36V, VCM = VOUT = VS/2, and RLOAD = 10kΩ connected to VS/2, unless otherwise noted.

 

 

 

OPA171, OPA2171, OPA4171

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

TEST CONDITIONS

MIN

TYP

MAX

UNIT

 

 

 

 

 

 

 

 

 

 

OFFSET VOLTAGE

 

 

 

 

 

 

 

 

 

Input offset voltage

VOS

 

 

0.25

±1.8

mV

Over temperature

 

 

 

0.3

± 2

mV

 

 

 

 

 

 

 

Drift

dVOS/dT

 

 

0.3

± 2

µ V/°C

vs power supply

PSRR

VS = +4V to +36V

 

1

± 3

µ V/V

Channel separation, dc

 

dc

 

5

 

µV/V

 

 

 

 

 

 

 

 

 

 

INPUT BIAS CURRENT

 

 

 

 

 

 

 

 

 

Input bias current

IB

 

 

±8

±15

pA

Over temperature

 

 

 

 

± 3.5

nA

 

 

 

 

 

 

 

Input offset current

IOS

 

 

±4

 

pA

Over temperature

 

 

 

 

± 3.5

nA

 

 

 

 

 

 

 

 

 

 

NOISE

 

 

 

 

 

 

 

 

 

Input voltage noise

 

f = 0.1Hz to 10Hz

 

3

 

µVPP

 

 

f = 100Hz

 

25

 

nV/√

 

 

Input voltage noise density

en

 

 

Hz

 

 

 

 

 

 

 

 

f = 1kHz

 

14

 

nV/√Hz

 

 

 

 

INPUT VOLTAGE

 

 

 

 

 

 

 

 

 

Common-mode voltage range(1)

V

 

(V–) – 0.1V

 

(V+) – 2V

V

 

CM

 

 

 

 

 

 

 

 

Common-mode rejection ratio

CMRR

VS = ± 2V, (V–) – 0.1V < VCM < (V+) – 2V

90

104

 

dB

VS = ± 18V, (V–) – 0.1V < VCM < (V+) – 2V

104

120

 

dB

 

 

 

INPUT IMPEDANCE

 

 

 

 

 

 

 

 

 

Differential

 

 

 

100 || 3

 

MΩ || pF

Common-mode

 

 

 

6 || 3

 

1012Ω ||

 

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OPEN-LOOP GAIN

 

 

 

 

 

 

 

 

 

Open-loop voltage gain

AOL

VS = +4V to +36V, (V–) + 0.35V < VO < (V+) – 0.35V

110

130

 

dB

FREQUENCY RESPONSE

 

 

 

 

 

 

 

 

 

Gain bandwidth product

GBP

 

 

3.0

 

MHz

 

 

 

 

 

 

 

 

 

 

Slew rate

SR

G = +1

 

1.5

 

V/µs

 

 

 

 

 

 

 

 

 

 

Settling time

tS

To 0.1%, VS = ±18V, G = +1, 10V step

 

6

 

µs

To 0.01% (12 bit), VS = ±18V, G = +1, 10V step

 

10

 

µs

Overload recovery time

 

VIN × Gain > VS

 

2

 

µs

Total harmonic distortion + noise

THD+N

G = +1, f = 1kHz, VO = 3VRMS

 

0.0002

 

%

 

OUTPUT

 

 

 

 

 

 

 

 

 

Voltage output swing from rail

VO

VS = 5V, RL = 10kΩ

 

30

 

mV

Over temperature

 

RL = 10kΩ, AOL ≥ 110dB

(V–) + 0.35

 

(V+) – 0.35

V

Short-circuit current

ISC

 

 

+25/–35

 

mA

Capacitive load drive

CLOAD

 

See Typical Characteristics

pF

Open-loop output resistance

RO

f = 1MHz, IO = 0A

 

150

 

Ω

POWER SUPPLY

 

 

 

 

 

 

 

 

 

Specified voltage range

VS

 

+2.7

 

+36

V

Quiescent current per amplifier

IQ

IO = 0A

 

475

595

µA

Over temperature

 

IO = 0A

 

 

650

µ A

TEMPERATURE

 

 

 

 

 

 

 

 

 

Specified range

 

 

–40

 

+125

°C

 

 

 

 

 

 

 

 

 

 

Operating range

 

 

–55

 

+150

°C

 

 

 

 

 

 

 

 

 

 

(1)The input range can be extended beyond (V+) – 2V up to V+. See the Typical Characteristics and Application Information sections for additional information.

Copyright © 2010–2012, Texas Instruments Incorporated

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Product Folder Links: OPA171 OPA2171 OPA4171

OPA171

OPA2171

OPA4171

SBOS516D –SEPTEMBER 2010 –REVISED SEPTEMBER 2012 www.ti.com

THERMAL INFORMATION: OPA171

 

 

 

OPA171

 

 

 

THERMAL METRIC(1)

 

 

 

 

 

D (SO)

DBV (SOT23)

DRL (SOT553)

UNITS

 

 

8 PINS

5 PINS

5 PINS

 

 

 

 

 

 

 

θJA

Junction-to-ambient thermal resistance

149.5

245.8

208.1

 

θJC(top)

Junction-to-case(top) thermal resistance

97.9

133.9

0.1

 

θJB

Junction-to-board thermal resistance

87.7

83.6

42.4

°C/W

ψJT

Junction-to-top characterization parameter

35.5

18.2

0.5

 

ψJB

Junction-to-board characterization parameter

89.5

83.1

42.2

 

θJC(bottom)

Junction-to-case(bottom) thermal resistance

N/A

N/A

N/A

 

(1)For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

THERMAL INFORMATION: OPA2171

 

 

 

OPA2171

 

 

 

THERMAL METRIC(1)

 

 

 

 

 

D (SO)

DCU (VSSOP)

DGK (MSOP)

UNITS

 

 

8 PINS

8 PINS

8 PINS

 

 

 

 

 

 

 

θJA

Junction-to-ambient thermal resistance

134.3

175.2

195.3

 

θJC(top)

Junction-to-case(top) thermal resistance

72.1

74.9

59.4

 

θJB

Junction-to-board thermal resistance

60.6

22.2

115.1

°C/W

ψJT

Junction-to-top characterization parameter

18.2

1.6

4.7

 

ψJB

Junction-to-board characterization parameter

53.8

22.8

114.4

 

θJC(bottom)

Junction-to-case(bottom) thermal resistance

N/A

N/A

N/A

 

(1)For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

THERMAL INFORMATION: OPA4171

 

 

 

OPA4171

 

 

THERMAL METRIC(1)

 

 

 

 

 

D (SO)

 

PW (TSSOP)

UNITS

 

 

14 PINS

 

14 PINS

 

 

 

 

 

 

 

θJA

Junction-to-ambient thermal resistance

93.2

 

106.9

 

θJC(top)

Junction-to-case(top) thermal resistance

51.8

 

24.4

 

θJB

Junction-to-board thermal resistance

49.4

 

59.3

°C/W

ψJT

Junction-to-top characterization parameter

13.5

 

0.6

 

 

ψJB

Junction-to-board characterization parameter

42.2

 

54.3

 

θJC(bottom)

Junction-to-case(bottom) thermal resistance

N/A

 

N/A

 

(1)For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

4

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Copyright © 2010–2012, Texas Instruments Incorporated

Product Folder Links: OPA171 OPA2171 OPA4171

OPA171

OPA2171

OPA4171

www.ti.com

SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

PIN CONFIGURATIONS

DRL PACKAGE: OPA171

SOT-553

(TOP VIEW)

IN+

1

5

V+

V−

2

 

 

IN−

3

4

OUT

DBV PACKAGE: OPA171

 

 

SOT23-5

 

 

 

(TOP VIEW)

 

OUT

1

5

V+

V−

2

 

 

+IN

3

4

−IN

D PACKAGE: OPA171

SO-8

(TOP VIEW)

NC(1)

1

8

NC(1)

−IN

2

7

V+

+IN

3

6

OUT

V−

4

5

NC(1)

D, DCU, AND DGK PACKAGES: OPA2171

SO-8, VSSOP-8, AND MSOP-8

(TOP VIEW)

OUT A

1

8

V+

−IN A 2

7

OUT B

+IN A

3

6

−IN B

V−

4

5

+IN B

D AND PW PACKAGES: OPA4171

SO-14 AND TSSOP-14

(TOP VIEW)

OUT A

1

14

OUT D

−IN A 2

13

−IN D

+IN A

3

12

+IN D

V+

4

11

V−

+IN B

5

10

+IN C

−IN B 6

9

−IN C

OUT B

7

8

OUT C

(1)No internal connection.

Copyright © 2010–2012, Texas Instruments Incorporated

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Product Folder Links: OPA171 OPA2171 OPA4171

OPA171

OPA2171

OPA4171

SBOS516D –SEPTEMBER 2010 –REVISED SEPTEMBER 2012 www.ti.com

TYPICAL CHARACTERISTICS

Table 1. Characteristic Performance Measurements

DESCRIPTION

FIGURE

 

 

Offset Voltage Production Distribution

Figure 1

 

 

Offset Voltage Drift Distribution

Figure 2

 

 

Offset Voltage vs Temperature

Figure 3

 

 

Offset Voltage vs Common-Mode Voltage

Figure 4

 

 

Offset Voltage vs Common-Mode Voltage (Upper Stage)

Figure 5

 

 

Offset Voltage vs Power Supply

Figure 6

 

 

IB and IOS vs Common-Mode Voltage

Figure 7

Input Bias Current vs Temperature

Figure 8

 

 

Output Voltage Swing vs Output Current (Maximum Supply)

Figure 9

 

 

CMRR and PSRR vs Frequency (Referred-to Input)

Figure 10

 

 

CMRR vs Temperature

Figure 11

 

 

PSRR vs Temperature

Figure 12

 

 

0.1Hz to 10Hz Noise

Figure 13

 

 

Input Voltage Noise Spectral Density vs Frequency

Figure 14

 

 

THD+N Ratio vs Frequency

Figure 15

 

 

THD+N vs Output Amplitude

Figure 16

 

 

Quiescent Current vs Temperature

Figure 17

 

 

Quiescent Current vs Supply Voltage

Figure 18

 

 

Open-Loop Gain and Phase vs Frequency

Figure 19

 

 

Closed-Loop Gain vs Frequency

Figure 20

 

 

Open-Loop Gain vs Temperature

Figure 21

 

 

Open-Loop Output Impedance vs Frequency

Figure 22

 

 

Small-Signal Overshoot vs Capacitive Load (100mV Output Step)

Figure 23, Figure 24

 

 

No Phase Reversal

Figure 25

 

 

Positive Overload Recovery

Figure 26

 

 

Negative Overload Recovery

Figure 27

 

 

Small-Signal Step Response (100mV)

Figure 28, Figure 29

 

 

Large-Signal Step Response

Figure 30, Figure 31

 

 

Large-Signal Settling Time (10V Positive Step)

Figure 32

 

 

Large-Signal Settling Time (10V Negative Step)

Figure 33

 

 

Short-Circuit Current vs Temperature

Figure 34

 

 

Maximum Output Voltage vs Frequency

Figure 35

 

 

Channel Separation vs Frequency

Figure 36

 

 

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Copyright © 2010–2012, Texas Instruments Incorporated

Product Folder Links: OPA171 OPA2171 OPA4171

OPA171

OPA2171

OPA4171

www.ti.com

SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

TYPICAL CHARACTERISTICS

VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.

OFFSET VOLTAGE PRODUCTION DISTRIBUTION

 

16

 

 

 

 

 

 

 

 

 

DISTRIBUTION TAKEN FROM 3500 AMPLIFIERS

 

 

 

(%)

14

 

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

AMPLIFIERS

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

PERCENTAGEOF

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

−1200

−1100

−1000 −900

−800 −700 −600

−500

−400 −300 −200 −100 0 100 200 300 400 500 600 700 800 900

1000

1100

1200

 

 

 

 

 

 

OFFSET VOLTAGE ( V)

 

 

 

Figure 1.

OFFSET VOLTAGE vs TEMPERATURE

 

600

 

 

 

 

 

 

 

 

 

 

5 TYPICAL UNITS SHOWN

 

 

 

 

 

 

400

 

 

 

 

 

 

 

 

 

( V)

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OFFSETVOLTAGE

0

 

 

 

 

 

 

 

 

 

−200

 

 

 

 

 

 

 

 

 

−400

 

 

 

 

 

 

 

 

 

 

−600

 

 

 

 

 

 

 

 

 

 

−800

 

 

 

 

 

 

 

 

 

 

−75

−50

−25

0

25

50

75

100

125

150

 

 

 

 

 

TEMPERATURE (°C)

 

 

 

 

Figure 3.

OFFSET VOLTAGE vs COMMON-MODE VOLTAGE (Upper Stage)

 

10000

 

 

 

 

 

 

 

10 TYPICAL UNITS SHOWN

 

 

 

 

 

8000

 

 

 

 

 

 

 

6000

 

 

 

 

 

 

 

4000

 

 

 

 

 

 

(µV)

2000

 

 

 

 

 

 

0

 

 

 

 

 

 

OS

 

 

 

 

 

 

 

 

 

 

 

 

 

V

−2000

 

 

 

 

 

 

 

 

NORMAL

 

 

 

 

 

 

 

 

 

 

 

 

−4000

OPERATION

 

VCM = +18.1V

 

 

 

−6000

 

 

 

 

 

 

 

 

 

 

 

 

 

−8000

 

 

 

 

 

 

 

−10000

 

 

 

 

 

 

 

15.5

16

16.5

17

17.5

18

18.5

VCM (V)

Figure 5.

OFFSET VOLTAGE DRIFT DISTRIBUTION

 

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISTRIBUTION TAKEN FROM 110 AMPLIFIERS

(%)

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AMPLIFIERS

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PERCENTAGEOF

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2

 

 

 

 

 

 

 

OFFSET VOLTAGE DRIFT ( V/°C)

 

 

 

 

 

Figure 2.

OFFSET VOLTAGE vs COMMON-MODE VOLTAGE

 

1000

 

 

 

 

10 TYPICAL UNITS SHOWN

 

 

800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

600

 

 

 

 

 

 

 

 

 

400

 

 

 

 

 

 

 

 

(µV)

200

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

OS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

−200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−400

 

 

 

 

 

 

 

 

 

−600

 

 

 

 

 

 

 

 

 

−800

VCM = −18.1V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−1000

 

 

 

 

 

 

 

 

 

−20

−15

−10

−5

0

5

10

15

20

VCM (V)

Figure 4.

 

 

 

OFFSET VOLTAGE vs POWER SUPPLY

 

 

 

350

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSUPPLY = ±1.35V TO ±18V

 

 

 

 

 

 

 

 

 

 

 

 

 

250

 

10 TYPICAL UNITS SHOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V)

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OS

−50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−350

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

12

14

 

 

18

 

 

 

0

2

4

6

8

16

20

VSUPPLY (V)

Figure 6.

Copyright © 2010–2012, Texas Instruments Incorporated

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www.ti.com

TYPICAL CHARACTERISTICS (continued)

VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.

 

 

IB AND IOS vs COMMON-MODE VOLTAGE

 

 

15

 

 

 

 

 

 

 

 

 

14

 

 

 

 

 

−IB

 

 

 

13

 

 

 

 

 

+IB

 

 

 

12

 

 

 

 

 

 

 

(PA)

 

 

 

 

 

−IOS

 

(PA)

9

 

 

 

 

 

 

 

11

 

 

 

 

 

 

 

ANDI

10

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

OS

8

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

INPUTBIAS

I

6

 

 

 

 

 

 

 

B

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

3

 

VCM = −18.1V

 

VCM = 16V

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

−20

−18

−12

−6

0

6

12

18

20

INPUT BIAS CURRENT vs TEMPERATURE

10000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

IB−

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

OS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−75 −50 −25

0

25

50

75

100 125 150

 

VCM (V)

TEMPERATURE (°C)

 

 

 

 

Figure 7.

 

 

 

 

 

 

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

 

 

 

 

 

(Maximum Supply)

 

 

 

 

(V)OUTPUTVOLTAGE

18

 

 

 

 

 

 

 

(DB),RATIOMODEREJECTION-COMMON

(DB)RATIOSUPPLYREJECTION-POWER

17

 

 

 

 

 

 

 

 

16

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

 

14.5

 

 

 

 

 

 

 

 

 

 

−14.5

 

 

 

 

 

 

 

 

 

 

−15

 

−40°C

 

 

 

 

 

 

 

 

−16

 

+25°C

 

 

 

 

 

 

 

 

 

+85°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−17

 

+125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−18

 

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

16

 

 

 

 

 

OUTPUT CURRENT (MA)

 

 

 

 

Figure 8.

CMRR AND PSRR vs FREQUENCY (Referred-to Input)

140

120

100

80

60

40

 

+PSRR

 

 

 

 

 

20

−PSRR

 

 

 

 

 

 

CMRR

 

 

 

 

 

0

 

 

 

 

 

 

 

1

10

100

1K

10K

100K

1M

10M

 

 

 

FREQUENCY (HZ)

 

 

 

Figure 9.

CMRR vs TEMPERATURE

(µV/V)

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RATIO

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEREJECTION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

−10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COMMON

−20

 

 

 

 

VS

= 2.7V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VS

= 36V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VS

= 4V

 

 

 

 

 

 

 

 

 

 

 

 

−30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−75

−50

−25

0

25

50

75 100 125 150

 

 

 

 

 

 

 

 

 

 

 

TEMPERATURE (°C)

 

 

 

 

 

Figure 10.

PSRR vs TEMPERATURE

µV/V)

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RATIO(

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SUPPLYREJECTION

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER-

−1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VS

= 4V TO 36V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VS

= 2.7V TO 36V

 

 

 

 

 

 

 

 

 

−3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−75

−50 −25

0

25

50

75 100 125 150

 

 

 

 

 

 

 

 

 

 

 

 

TEMPERATURE (°C)

 

 

 

 

 

Figure 11.

Figure 12.

8

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www.ti.com

SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

TYPICAL CHARACTERISTICS (continued)

VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.

 

 

 

 

 

 

 

 

 

 

 

 

 

INPUT VOLTAGE NOISE SPECTRAL DENSITY vs

 

 

 

 

0.1Hz TO 10Hz NOISE

 

 

 

 

 

 

 

 

 

 

 

FREQUENCY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

HZ)

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(NV/

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 V/DIV

 

 

 

 

 

 

 

 

 

 

 

VOLTAGENOISEDENSITY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TIME (1S/DIV)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

10

 

 

100

 

 

 

1K

10K

100K

1M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FREQUENCY (HZ)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 13.

 

 

 

 

 

 

 

 

 

 

 

 

Figure 14.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THD+N RATIO vs FREQUENCY

 

 

 

 

 

THD+N vs OUTPUT AMPLITUDE

 

 

 

0.01

 

 

 

−80

TOTALHARMONICDISTORTION+NOISE(DB)

0.1

 

 

 

−80

DISTORTIONTOTALHARMONIC+NOISE(%)

VOUT = 3VRMS

 

 

 

DISTORTIONTOTALHARMONIC+NOISE(%)

G = −1, RL = 2KΩ

 

BW = 80KHZ

G = −1, RL = 2KΩ

 

 

 

 

 

 

 

BW = 80KHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

0.001

 

 

 

−100

 

 

 

 

 

−100

 

 

 

 

 

 

0.001

 

 

 

 

0.0001

 

 

 

−120

 

 

 

 

 

−120

 

 

 

 

 

 

0.0001

 

 

 

 

 

G = +1, RL = 10KΩ

 

 

 

 

 

G = +1, RL = 10KΩ

 

 

 

0.00001

 

 

 

−140

 

0.00001

 

 

 

−140

10

100

1K

10K

20K

 

0.01

0.1

1

10

20

 

FREQUENCY (HZ)

 

 

 

 

OUTPUT AMPLITUDE (VRMS)

 

 

Figure 15.

Figure 16.

(DB)NOISE+DISTORTIONHARMONICTOTAL

I (MA) Q

QUIESCENT CURRENT vs TEMPERATURE

QUIESCENT CURRENT vs SUPPLY VOLTAGE

0.65

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

0.55

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

0.55

 

 

 

 

 

 

 

 

 

(MA)

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

0.45

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

0.45

 

 

 

 

 

 

 

 

 

 

0.35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SPECIFIED SUPPLY-VOLTAGE RANGE

 

 

0.35

 

 

 

 

 

 

 

 

 

 

0.25

 

 

 

 

 

 

 

 

 

−75

−50

−25

0

25

50

75

100

125

150

 

0

4

8

12

16

20

24

28

32

36

 

 

 

 

TEMPERATURE (°C)

 

 

 

 

 

 

 

 

SUPPLY VOLTAGE (V)

 

 

 

Figure 17.

Figure 18.

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TYPICAL CHARACTERISTICS (continued)

VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.

GAIN(DB)

OPEN-LOOP GAIN AND PHASE vs FREQUENCY

CLOSED-LOOP GAIN vs FREQUENCY

180

 

 

 

 

 

 

180

 

 

25

 

 

 

 

 

GAIN

 

 

 

 

 

 

 

 

20

 

 

 

 

135

 

 

 

 

PHASE

 

135

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

90

 

 

 

 

 

 

90

°)(PHASE

GAIN(DB)

5

 

 

 

 

45

 

 

 

 

 

 

45

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−5

 

 

 

 

0

 

 

 

 

 

 

0

 

 

−10

G = 10

 

 

 

 

 

 

 

 

 

 

 

 

 

−15

G = 1

 

 

 

 

 

 

 

 

 

 

 

 

 

G = −1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

−45

 

 

 

 

 

 

−45

 

 

−20

 

 

 

 

1

10

100

1K

10K

100K

1M

10M

 

 

10K

100K

1M

10M

100M

FREQUENCY (HZ)

FREQUENCY (HZ)

Figure 19.

Figure 20.

OPEN-LOOP GAIN vs TEMPERATURE

 

3

 

 

 

 

 

 

 

 

 

 

5 TYPICAL UNITS SHOWN

 

 

VS = 2.7V

 

2.5

 

 

 

 

 

 

VS = 4V

 

 

 

 

 

 

 

 

 

VS = 36V

 

(µV/V)

2

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

OL

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

−75

−50

−25

0

25

50

75

100

125

150

 

 

 

 

 

TEMPERATURE (°C)

 

 

 

 

Figure 21.

SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD (100mV Output Step)

 

50

 

 

 

 

 

 

 

 

 

 

 

 

RL = 10KΩ

 

 

 

 

 

 

 

 

 

45

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

OVERSHOOT(%)

35

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

G = +1

 

 

 

ROUT = 0Ω

 

+18V

 

 

15

 

 

 

 

ROUT

 

 

 

 

 

 

ROUT = 25Ω

 

OPA171

 

 

 

 

10

 

 

 

 

 

RL

CL

 

 

 

 

 

 

 

 

−18V

 

 

 

 

 

ROUT = 50Ω

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

100

200

300

400

500

600

700

800

900

1000

 

 

 

 

CAPACITIVE LOAD (PF)

 

 

 

Figure 23.

OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY

 

1M

 

 

 

 

 

 

 

 

100K

 

 

 

 

 

 

 

 

10K

 

 

 

 

 

 

 

Ω)

1K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

O

 

 

 

 

 

 

 

 

Z

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

1M

 

 

 

 

 

 

 

 

1

10

100

1K

10K

100K

1M

10M

FREQUENCY (HZ)

Figure 22.

SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD (100mV Output Step)

 

50

 

 

 

 

 

 

 

 

 

 

 

45

 

ROUT = 0Ω

 

 

 

 

 

 

 

 

40

 

ROUT = 25Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

35

 

ROUT = 50Ω

 

 

 

 

 

 

 

OVERSHOOT(%)

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RI = 10KΩ

RF = 10KΩ

G = −1

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+18V

 

 

 

10

 

 

 

 

 

 

 

OPA171

ROUT

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

CL

 

 

 

 

 

 

 

 

−18V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

100

200

300

400

500

600

700

800

900

1000

 

 

 

 

CAPACITIVE LOAD (PF)

 

 

 

Figure 24.

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SBOS516D –SEPTEMBER 2010–REVISED SEPTEMBER 2012

TYPICAL CHARACTERISTICS (continued)

VS = ±18V, VCM = VS/2, RLOAD = 10kΩ connected to VS/2, and CL = 100pF, unless otherwise noted.

NO PHASE REVERSAL

 

+18V

OUTPUT

OPA171

 

−18V

 

37VPP

 

SINE WAVE

5V/DIV

(±18.5V)

 

 

OUTPUT

 

TIME (100 S/DIV)

POSITIVE OVERLOAD RECOVERY

 

VOUT

 

5V/DIV

VIN

 

 

 

 

20KΩ

 

 

+18V

 

 

2KΩ

 

 

OPA171

VOUT

 

VIN

 

 

−18V

 

 

G = −10

 

 

TIME (5µS/DIV)

Figure 25.

NEGATIVE OVERLOAD RECOVERY

5V/DIV

VIN

 

 

 

 

 

 

 

20KΩ

 

 

2KΩ

+18V

 

 

 

 

 

 

OPA171

VOUT

VOUT

VIN

 

 

 

−18V

 

 

 

G = −10

 

TIME (5µS/DIV)

 

 

Figure 26.

SMALL-SIGNAL STEP RESPONSE (100mV)

RL = 10KΩ

+18V

G = +1

CL = 100PF

 

 

 

 

OPA171

 

 

 

−18V

RL

CL

20MV/DIV

 

 

 

 

TIME (1µS/DIV)

 

 

Figure 27.

Figure 28.

SMALL-SIGNAL STEP RESPONSE

 

(100mV)

LARGE-SIGNAL STEP RESPONSE

 

 

 

G = +1

 

CL = 100PF

 

RL = 10KΩ

 

 

 

CL = 100PF

20MV/DIV

RI = 2KΩ

+18V

2V/DIV

 

RF = 2KΩ

 

 

 

OPA171

 

 

 

 

CL

 

 

−18V

 

 

G = −1

 

 

 

TIME (20µS/DIV)

TIME (5µS/DIV)

Figure 29.

Figure 30.

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