512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
FEATURES:
•Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
•Single Voltage Read and Write Operations
–3.0-3.6V for SST39LF512/010/020/040
–2.7-3.6V for SST39VF512/010/020/040
•Superior Reliability
–Endurance: 100,000 Cycles (typical)
–Greater than 100 years Data Retention
•Low Power Consumption:
–Active Current: 10 mA (typical)
–Standby Current: 1 µA (typical)
•Sector-Erase Capability
–Uniform 4 KByte sectors
•Fast Read Access Time:
–45 ns for SST39LF512/010/020/040
–55 ns for SST39LF020/040
–70 and 90 ns for SST39VF512/010/020/040
•Latched Address and Data
•Fast Erase and Byte-Program:
–Sector-Erase Time: 18 ms (typical)
–Chip-Erase Time: 70 ms (typical)
–Byte-Program Time: 14 µs (typical)
–Chip Rewrite Time:
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
•Automatic Write Timing
–Internal VPP Generation
•End-of-Write Detection
–Toggle Bit
–Data# Polling
•CMOS I/O Compatibility
•JEDEC Standard
–Flash EEPROM Pinouts and command sets
•Packages Available
–32-lead PLCC
–32-lead TSOP (8mm x 14mm)
–48-ball TFBGA (6mm x 8mm) for 1 Mbit
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.0- 3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF512/010/020/040 and SST39VF512/010/020/ 040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they
significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF512/ 010/020/040 and SST39VF512/010/020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages. The 39LF/VF010 is also offered in a 48-ball TFBGA package. See Figures 1 and 2 for pinouts.
©2001 Silicon Storage Technology, Inc. |
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. |
|
S71150-03-000 6/01 |
395 |
MPF is a trademark of Silicon Storage Technology, Inc. |
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These specifications are subject to change without notice. |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the SST39LF512/010/020/040 and SST39VF512/010/020/040 device is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 4).
Byte-Program Operation
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are programmed on a byte-by-byte basis. Before programming, one must ensure that the sector, in which the byte which is being programmed exists, is fully erased. The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 15 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored.
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The SectorErase operation is initiated by executing a six-byte-com- mand sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE#
Data Sheet
pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 9 for timing waveforms. Any commands written during the Sector-Erase operation will be ignored.
Chip-Erase Operation
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 18 for the flowchart. Any commands written during the ChipErase operation will be ignored.
Write Operation Status Detection
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
2
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Data# Polling (DQ7)
When the SST39LF512/010/020/040 and SST39VF512/ 010/020/040 are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sectoror Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Data# Polling timing diagram and Figure 16 for a flowchart.
Software Data Protection (SDP)
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 provide the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three byte sequence. The three byte-load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or powerdown. Any Erase operation requires the inclusion of six byte load sequence. These devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sectoror ChipErase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing diagram and Figure 16 for a flowchart.
Product Identification
The Product Identification mode identifies the devices as the SST39LF/VF512, SST39LF/VF010, SST39LF/VF020 and SST39LF/VF040 and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 11 for the Software ID Entry and Read timing diagram, and Figure 17 for the Software ID entry command sequence flowchart.
Data Protection
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 provide both hardware and software features to protect nonvolatile data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
TABLE 1: PRODUCT IDENTIFICATION
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Address |
Data |
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Manufacturer’s ID |
0000H |
BFH |
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Device ID |
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SST39LF/VF512 |
0001H |
D4H |
SST39LF/VF010 |
0001H |
D5H |
SST39LF/VF020 |
0001H |
D6H |
SST39LF/VF040 |
0001H |
D7H |
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T1.1 395
Product Identification Mode Exit/Reset
In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read operation. Please note that the Software ID Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 12 for timing waveform, and Figure 17 for a flowchart.
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
3
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
FUNCTIONAL BLOCK DIAGRAM |
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SuperFlash |
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X-Decoder |
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Memory |
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Memory Address |
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Address Buffers & Latches |
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CE# |
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Y-Decoder |
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OE# |
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Control Logic |
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I/O Buffers and Data Latches |
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WE# |
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DQ7 - DQ0 |
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395 ILL B1.1 |
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SST39LF/VF040 |
A12 |
A15 |
A16 |
A18 |
V |
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WE# |
A17 |
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SST39LF/VF020 |
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DD |
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A12 |
A15 |
A16 |
NC |
V |
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WE# |
A17 |
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SST39LF/VF010 |
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DD |
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A12 |
A15 |
A16 |
NC |
V |
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WE# |
NC |
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DD |
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SST39LF/VF512 |
A12 |
A15 |
NC |
NC |
V |
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WE# |
NC |
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DD |
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SST39LF/VF040 |
SST39LF/VF020 |
SST39LF/VF010 |
SST39LF/VF512 |
4 |
3 |
2 |
1 |
32 |
31 |
30 |
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SST39LF/VF512 |
SST39LF/VF010 |
SST39LF/VF020 |
SST39LF/VF040 |
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A7 |
A7 |
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A7 |
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A7 |
5 |
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29 |
A14 |
A14 |
A14 |
A14 |
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A6 |
A6 |
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A6 |
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A6 |
6 |
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28 |
A13 |
A13 |
A13 |
A13 |
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A5 |
A5 |
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A5 |
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A5 |
7 |
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27 |
A8 |
A8 |
A8 |
A8 |
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A4 |
A4 |
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A4 |
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A4 |
8 |
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32-lead PLCC |
26 |
A9 |
A9 |
A9 |
A9 |
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A3 |
A3 |
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A3 |
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A3 |
9 |
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25 |
A11 |
A11 |
A11 |
A11 |
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Top View |
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A2 |
A2 |
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A2 |
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A2 |
10 |
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24 |
OE# |
OE# |
OE# |
OE# |
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A1 |
A1 |
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A1 |
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A1 |
11 |
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23 |
A10 |
A10 |
A10 |
A10 |
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A0 |
A0 |
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A0 |
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A0 |
12 |
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22 |
CE# |
CE# |
CE# |
CE# |
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DQ0 |
DQ0 |
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DQ0 |
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DQ0 |
13 |
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21 |
DQ7 |
DQ7 |
DQ7 |
DQ7 |
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14 |
15 |
16 |
17 |
18 |
19 |
20 |
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SST39LF/VF512 |
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DQ1 |
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DQ2 |
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V |
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DQ3 |
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DQ4 |
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DQ5 |
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DQ6 |
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SST39LF/VF010 |
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SS |
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DQ1 |
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DQ2 |
|
V |
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DQ3 |
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DQ4 |
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DQ5 |
|
DQ6 |
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SS |
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SST39LF/VF020 |
DQ1 |
|
DQ2 |
|
V |
|
DQ3 |
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DQ4 |
|
DQ5 |
|
DQ6 |
SST39LF/VF040 |
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SS |
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DQ1 |
|
DQ2 |
|
V |
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DQ3 |
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DQ4 |
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DQ5 |
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DQ6 |
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SS |
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395 ILL F02b.3
FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
4
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
SST39LF/VF040 |
SST39LF/VF020 |
SST39LF/VF010 |
SST39LF/VF512 |
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|
|||
A11 |
A11 |
A11 |
A11 |
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1 |
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A9 |
A9 |
A9 |
A9 |
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2 |
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A8 |
A8 |
A8 |
A8 |
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3 |
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A13 |
A13 |
A13 |
A13 |
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4 |
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A14 |
A14 |
A14 |
A14 |
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5 |
Standard Pinout |
A17 |
A17 |
NC |
NC |
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6 |
|
WE# |
WE# |
WE# |
WE# |
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7 |
Top View |
VDD |
VDD |
VDD |
VDD |
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8 |
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|||||
A18 |
NC |
NC |
NC |
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9 |
Die Up |
A16 |
A16 |
A16 |
NC |
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10 |
|
A15 |
A15 |
A15 |
A15 |
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11 |
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A12 |
A12 |
A12 |
A12 |
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12 |
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A7 |
A7 |
A7 |
A7 |
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13 |
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A6 |
A6 |
A6 |
A6 |
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14 |
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A5 |
A5 |
A5 |
A5 |
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15 |
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A4 |
A4 |
A4 |
A4 |
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16 |
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SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040
32 |
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|
OE# |
OE# |
OE# |
OE# |
31 |
|
|
A10 |
A10 |
A10 |
A10 |
30 |
|
|
CE# |
CE# |
CE# |
CE# |
29 |
|
|
DQ7 |
DQ7 |
DQ7 |
DQ7 |
28 |
|
|
DQ6 |
DQ6 |
DQ6 |
DQ6 |
27 |
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|
DQ5 |
DQ5 |
DQ5 |
DQ5 |
26 |
|
|
DQ4 |
DQ4 |
DQ4 |
DQ4 |
25 |
|
|
DQ3 |
DQ3 |
DQ3 |
DQ3 |
24 |
|
|
VSS |
VSS |
VSS |
VSS |
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|
|||||
23 |
|
|
DQ2 |
DQ2 |
DQ2 |
DQ2 |
22 |
|
|
DQ1 |
DQ1 |
DQ1 |
DQ1 |
21 |
|
|
DQ0 |
DQ0 |
DQ0 |
DQ0 |
20 |
|
|
A0 |
A0 |
A0 |
A0 |
19 |
|
|
A1 |
A1 |
A1 |
A1 |
18 |
|
|
A2 |
A2 |
A2 |
A2 |
17 |
|
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A3 |
A3 |
A3 |
A3 |
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395 ILL F01.0
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM)
|
TOP VIEW |
(balls facing down) |
||||
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|
SST39LF/VF010 |
|
|||
6 |
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|
|
NC |
NC |
NC VSS |
A14 A13 A15 A16 |
||||||
5 |
A8 A11 A12 |
NC A10 DQ6 DQ7 |
||||
A9 |
||||||
4 |
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WE# NC NC |
NC DQ5 NC VDD DQ4 |
|||||
3 |
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NC NC NC |
NC DQ2 DQ3 VDD NC |
|||||
2 |
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A7 |
NC |
A6 |
A5 |
DQ0 NC |
NC DQ1 |
|
1 |
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|
A3 |
A4 |
A2 |
A1 |
A0 CE# OE# VSS |
||
A |
B |
C |
D |
E |
F |
G H |
395 ILL F01a.0.eps
FIGURE 3: PIN ASSIGNMENT FOR 48-BALL TFBGA (6MM X 8MM) FOR 1 MBIT
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
5
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE |
2: PIN DESCRIPTION |
|
|
|
Symbol |
|
Pin Name |
Functions |
|
|
|
|
|
|
AMS1-A0 |
|
Address Inputs |
To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the |
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|
|
|
sector. During Block-Erase AMS-A16 address lines will select the block. |
|
DQ7-DQ0 |
|
Data Input/output |
To output data during Read cycles and receive input data during Write cycles. |
|
|
|
|
Data is internally latched during a Write cycle. |
|
|
|
|
The outputs are in tri-state when OE# or CE# is high. |
|
CE# |
|
Chip Enable |
To activate the device when CE# is low. |
|
OE# |
|
Output Enable |
To gate the data output buffers. |
|
WE# |
|
Write Enable |
To control the Write operations. |
|
VDD |
|
Power Supply |
To provide power supply voltage: |
3.0-3.6V for SST39LF512/010/020/040 |
|
|
|
|
2.7-3.6V for SST39VF512/010/020/040 |
VSS |
|
Ground |
|
|
NC |
|
No Connection |
Unconnected pins. |
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T2.1 395 |
1.AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
TABLE 3: OPERATION MODES SELECTION
Mode |
CE# |
OE# |
WE# |
DQ |
Address |
|
|
|
|
|
|
Read |
VIL |
VIL |
VIH |
DOUT |
AIN |
Program |
VIL |
VIH |
VIL |
DIN |
AIN |
Erase |
VIL |
VIH |
VIL |
X1 |
Sector address, |
|
|
|
|
|
XXH for Chip-Erase |
Standby |
VIH |
X |
X |
High Z |
X |
Write Inhibit |
X |
VIL |
X |
High Z/ DOUT |
X |
|
X |
X |
VIH |
High Z/ DOUT |
X |
Product Identification |
|
|
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|
|
Software Mode |
VIL |
VIL |
VIH |
|
See Table 4 |
T3.4 395
1. X can be VIL or VIH, but no other value.
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
6
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command |
1st Bus |
2nd Bus |
3rd Bus |
4th Bus |
5th Bus |
6th Bus |
||||||
Sequence |
Write Cycle |
Write Cycle |
Write Cycle |
Write Cycle |
Write Cycle |
Write Cycle |
||||||
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|
Addr1 |
Data |
Addr1 |
Data |
Addr1 |
Data |
Addr1 |
Data |
Addr1 |
Data |
Addr1 |
Data |
Byte-Program |
5555H |
AAH |
2AAAH |
55H |
5555H |
A0H |
BA2 |
Data |
|
|
|
|
Sector-Erase |
5555H |
AAH |
2AAAH |
55H |
5555H |
80H |
5555H |
AAH |
2AAAH |
55H |
SAX3 |
30H |
Chip-Erase |
5555H |
AAH |
2AAAH |
55H |
5555H |
80H |
5555H |
AAH |
2AAAH |
55H |
5555H |
10H |
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Software ID Entry4,5 |
5555H |
AAH |
2AAAH |
55H |
5555H |
90H |
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Software ID Exit6 |
XXH |
F0H |
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Software ID Exit6 |
5555H |
AAH |
2AAAH |
55H |
5555H |
F0H |
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|
T4.2 395
1. Address format A14-A0 (Hex),
Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF512. Addresses A15-A16 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF010. Addresses A15-A17 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF020. Addresses A15-A18 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF040.
2.BA = Program Byte address
3.SAX for Sector-Erase; uses AMS-A12 address lines AMS = Most significant address
AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
4.The device does not remain in Software Product ID Mode if powered down.
5. |
With AMS-A1 =0; SST Manufacturer’s ID= BFH, is read with A0 = 0, |
|
SST39LF/VF512 Device ID = D4H, is read with A0 = 1 |
|
SST39LF/VF010 Device ID = D5H, is read with A0 = 1 |
|
SST39LF/VF020 Device ID = D6H, is read with A0 = 1 |
|
SST39LF/VF040 Device ID = D7H, is read with A0 = 1 |
6. |
Both Software ID Exit operations are equivalent |
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . -55°C to +125°C |
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . -65°C to +150°C |
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
-0.5V to VDD + 0.5V |
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
-1.0V to VDD + 1.0V |
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . -0.5V to 13.2V |
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . 1.0W |
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . 50 mA |
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE FOR SST39LF512/010/020/040
Range |
Ambient Temp |
VDD |
Commercial |
0°C to +70°C |
3.0-3.6V |
|
|
|
OPERATING RANGE FOR SST39VF512/010/020/040
Range |
Ambient Temp |
VDD |
Commercial |
0°C to +70°C |
2.7-3.6V |
Industrial |
-40°C to +85°C |
2.7-3.6V |
|
|
|
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Output Load
CL = 30 pF for SST39LF512/010/020/040 CL = 100 pF for SST39VF512/010/020/040
See Figures 13 and 14
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
7
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE |
5: DC OPERATING CHARACTERISTICS |
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|
|
|
|
|
|
|||||
|
|
|
VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/040 |
||||||||||
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Limits |
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Symbol |
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|
Parameter |
|
Min |
|
Max |
Units |
Test Conditions |
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|||
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|
IDD |
|
|
Power Supply Current |
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|
|
|
|
Address input=VIL/VIH, at f=1/TRC Min |
||||
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VDD=VDD Max |
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||
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|
Read |
|
|
|
20 |
mA |
CE#=OE#=VIL, WE#=VIH, all I/Os open |
||||
|
|
|
Write |
|
|
|
20 |
mA |
CE#=WE#=VIL, OE#=VIH |
|
|||
ISB |
|
|
Standby VDD Current |
|
|
|
15 |
µA |
CE#=VIHC, VDD=VDD Max |
|
|||
ILI |
|
|
Input Leakage Current |
|
|
|
1 |
µA |
VIN=GND to VDD, VDD=VDD Max |
|
|||
ILO |
|
|
Output Leakage Current |
|
|
|
10 |
µA |
VOUT=GND to VDD, VDD=VDD Max |
|
|||
VIL |
|
|
Input Low Voltage |
|
|
|
0.8 |
V |
VDD=VDD Min |
|
|||
VIH |
|
|
Input High Voltage |
|
0.7VDD |
|
|
V |
VDD=VDD Max |
|
|||
VIHC |
|
|
Input High Voltage (CMOS) |
|
VDD-0.3 |
|
|
V |
VDD=VDD Max |
|
|||
VOL |
|
|
Output Low Voltage |
|
|
|
0.2 |
V |
IOL=100 µA, VDD=VDD Min |
|
|||
VOH |
|
|
Output High Voltage |
|
VDD-0.2 |
|
|
V |
IOH=-100 µA, VDD=VDD Min |
|
|||
|
|
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|
|
|
|
|
|
T5.2 395 |
TABLE |
6: RECOMMENDED SYSTEM POWER-UP TIMINGS |
|
|
|
|
|
|||||||
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|
Symbol |
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|
|
Parameter |
|
|
|
|
|
Minimum |
|
Units |
|
|
|
|
|
|
|
|
|
|
|
|
|||
TPU-READ1 |
|
Power-up to Read Operation |
|
|
|
|
|
100 |
|
µs |
|||
TPU-WRITE1 |
|
Power-up to Program/Erase Operation |
|
|
100 |
|
µs |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
T6.1 395 |
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter |
Description |
Test Condition |
Maximum |
|
|
|
|
CI/O1 |
I/O Pin Capacitance |
VI/O = 0V |
12 pF |
CIN1 |
Input Capacitance |
VIN = 0V |
6 pF |
T7.0 395
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE |
8: RELIABILITY CHARACTERISTICS |
|
|
|
|
Symbol |
|
Parameter |
Minimum Specification |
Units |
Test Method |
|
|
|
|
|
|
NEND1 |
|
Endurance |
10,000 |
Cycles |
JEDEC Standard A117 |
TDR1 |
|
Data Retention |
100 |
Years |
JEDEC Standard A103 |
ILTH1 |
|
Latch Up |
100 + IDD |
mA |
JEDEC Standard 78 |
T8.2 395
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc. |
S71150-03-000 6/01 395 |
8