Silicon Storage Technology Inc SST30VR043-70-C-WH-R, SST30VR043-70-C-UN-R, SST30VR043-70-C-UH-R, SST30VR043-150-E-WN-R, SST30VR043-150-E-WH-R Datasheet

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Silicon Storage Technology Inc SST30VR043-70-C-WH-R, SST30VR043-70-C-UN-R, SST30VR043-70-C-UH-R, SST30VR043-150-E-WN-R, SST30VR043-150-E-WH-R Datasheet

4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo

SST30VR041 / SST30VR043

Preliminary Specifications

FEATURES:

• ROM + SRAM ROM/RAM Combo

– SST30VR041: 512K x8 ROM + 128K x8 SRAM

– SST30VR043: 512K x8 ROM + 32K x8 SRAM

ROM/RAM combo on a monolithic chip

Equivalent ComboMemory (Flash + SRAM): SST31LF041A for code development and pre-production

Wide Operating Voltage Range: 2.7-3.3V

Chip Access Time

SST30VR041

70 ns and 150 ns

SST30VR043

150 ns

Low Power Dissipation:

Standby: 1.0 µW (Typical)

Operating: 3.0 mW (Typical)

Fully Static Operation

No clock or refresh required

Three state Outputs

Packages Available

32-pin TSOP (8mm x14mm)

PRODUCT DESCRIPTION

The SST30VR041/043 are ROM/RAM combo chips consisting of 4 Mbit Read Only Memory organized as 512 KBytes and a Static Random Access Memory organized as either 128 or 32 KBytes. Output Enable Input (OE#) is pin-shared with RAMCS# (RAM Enable Input) signal in order to maintain the standard 32-pin TSOP package.

The device is fabricated using SST’s advanced CMOS low power process technology.

The SST30VR041/043 have an output enable input for precise control of the data outputs. It also has two (2) separate chip enable inputs for selection of either RAM or ROM and for minimizing current drain during power-down mode.

The SST30VR041/043 is particularly well suited for use in low voltage (2.7-3.3V) supplies such as pagers, organizers and other handheld applications.

FUNCTIONAL BLOCK DIAGRAM

ROMCS#

OE#/RAMCS#

WE#

AMS-A0

Control

Circuit

Address Buffer

RAMCS#

OE#

WE#

RAM

ROMCS#

OE#

ROM

Data Buffer

DQ7-DQ0

Note: AMS = Most Significant Address

381 ILL B1.2

 

©2001 Silicon Storage Technology, Inc.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

S71134-02-000 4/01

381

ComboMemory is a trademark of Silicon Storage Technology, Inc.

 

 

These specifications are subject to change without notice.

4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR041 / SST30VR043

Preliminary Specifications

A11 1

A9 2

A8 3

A13 4

A14 5

A17 6 WE# 7

VDD 8 A18 9

A16 10

A15 11

A12 12

A7 13

A6 14

A5 15

A4 16

 

32

 

 

OE#/RAMCS#

 

31

 

 

A10

 

30

 

 

ROMCS#

 

29

 

 

DQ7

Standard Pinout

28

 

 

DQ6

27

 

 

DQ5

Top View

26

 

 

DQ4

25

 

 

DQ3

Die Up

24

 

 

VSS

 

 

23

 

 

DQ2

 

22

 

 

DQ1

 

21

 

 

DQ0

 

20

 

 

A0

 

19

 

 

A1

 

18

 

 

A2

 

17

 

 

A3

 

 

 

 

 

381 ILL F01.0

FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN TSOP

TABLE 1: PIN DESCRIPTION

Symbol

Pin Name

 

 

AMS1-A0

Address Inputs, for ROM: AMS = A18, for RAM: AMS =A16 for SST30VR041

 

A14 for SST30VR043

WE#

Write Enable Input

OE#/RAMCS#

Output Enable/RAM Enable Input

ROMCS#

ROM Enable Input

DQ7-DQ0

Data Input/Output

VDD

Power Supply

VSS

Ground

 

T1.2 381

1. AMS = Most significant address

©2001 Silicon Storage Technology, Inc.

S71134-02-000 4/01 381

2

4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR041 / SST30VR043

Preliminary Specifications

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Voltage on Any Pin Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Voltage on VDD Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Soldering Temperature (10 Seconds Lead Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C

OPERATING RANGE

 

 

 

 

 

 

 

 

 

 

 

 

 

Range

 

 

 

 

Ambient Temp

 

 

VDD

 

 

 

 

 

 

 

Commercial

 

 

 

0°C to +70°C

 

 

2.7-3.3V

 

 

 

 

 

 

 

Extended

 

 

 

 

-20°C to +85°C

 

 

2.7-3.3V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC CONDITIONS OF TEST

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Pulse Level . . . . . . . . . . . . . . . . . . . .

0-VDD

 

 

 

 

 

 

Input & Output Timing Reference Levels . . .

VDD/2

 

 

 

 

 

 

 

 

 

Input Rise/Fall Time . . . . . . . . . . . . . . . . . . .

5 ns

 

 

 

 

 

 

 

 

 

Output Load

. . . . . . . . . . . . . . . . . . . . . . . . . CL =

30 pF for 70 ns

 

 

 

 

 

Output Load

. . . . . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 150 ns

 

 

 

 

 

TABLE

2: RECOMMENDED DC OPERATING CONDITIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Parameter

 

 

 

 

Min

 

Max

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

 

 

 

Supply Voltage

 

 

 

2.7

 

 

3.3

 

V

VSS

 

 

 

Ground

 

 

 

 

0

 

 

0

 

V

VIH

 

 

 

Input High Voltage

 

 

 

2.4

 

 

VDD + 0.5

 

V

VIL

 

 

 

Input Low Voltage

 

 

 

-0.3

 

0.3

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T2.0 381

TABLE

3: DC OPERATING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD = 3.0±0.3V

 

 

 

 

Symbol

Parameter

 

 

 

Min

Max

Units

Test Conditions

 

 

 

 

 

 

 

 

IDD1

ROM Operating Supply Current

 

4.0+1.1(f)1

mA

ROMCS# = VIL, RAMCS# = VIH,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN = VIH or VIL, II/O = Opens

 

IDD2

RAM Operating Supply Current

 

2.5+1(f)1

mA

ROMCS# = VIH, RAMCS# = VIL, II/O = Opens

ISB

Standby VDD Current

 

10

µA

ROMCS# VDD-0.2V, RAMCS#

VDD-0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN VDD-0.2V or VIN 0.2V

 

ILI

Input Leakage Current

-1

1

µA

VIN = VSS to VDD

 

ILO

Output Leakage Current

-1

1

µA

ROMCS# = RAMCS# = VIH or OE# = VIH or

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WE# = VIL, VI/O = VSS to VDD

 

VOL

Output Low Voltage

 

0.4

V

IOL = 1.0 mA

 

VOH

Output High Voltage

2.2

 

 

 

V

IOH = -0.5 mA

 

1. f = Frequency of operation (MHz) = 1/cycle time

 

 

 

 

 

 

 

 

T3.4 381

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

©2001 Silicon Storage Technology, Inc.

 

3

 

 

 

 

S71134-02-000 4/01 381

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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