Siemens IL5, IL2 Datasheet

FEATURES

•Current Transfer Ratio at IF=10 mA IL1, 20% Min.

IL2, 100% Min. IL5, 50% Min.

•High Collector-Emitter Voltage

IL1 – BVCEO=50 V

IL2, IL5 – BVCEO=70 V

•Field-Effect Stable by TRansparent IOn Shield (TRIOS)

•Double Molded Package Offers Isolation Test Voltage 5300 VACRMS

•Underwriters Lab File #E52744

• VDE Approval #0884

V

D E

(Available with Option 1)

DESCRIPTION

The IL1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation.

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

					IL1/2/5
			PHOTOTRANSISTOR
				OPTOCOUPLER
Dimensions in inches (mm)
			Pin One ID
3	2	1	Anode	1	6	Base
.248 (6.30)
.256 (6.50)			Cathode	2	5	Collector
4	5	6	NC	3	4	Emitter
.335 (8.50)
.343 (8.70)
.039					.300 (7.62)
					typ.
(1.00)
Min.			.130 (3.30)
			.150 (3.81)
4°					18°typ.	.110 (2.79)
typ.			.020 (.051) min.
					.010 (.25)	.150 (3.81)
			.031 (0.80)
.018 (0.45)					.014 (.35)
			.035 (0.90)		.300 (7.62)
.022 (0.55)
			.100 (2.54) typ.
					.347 (8.82)

Maximum Ratings
Emitter
Reverse Voltage..................................................................................	6 V
Forward Current .............................................................................	60 mA
Surge Current ..................................................................................	2.5 A
Power Dissipation ........................................................................	100 mW
Derate Linearly from 25°C ....................................................	1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage
IL1...................................................................................................	50 V
IL2, IL5.............................................................................................	70 V
Emitter-Base Reverse Voltage .............................................................	7 V
Collector-Base Reverse Voltage ........................................................	70 V
Collector Current ............................................................................	50 mA
Collector Current (t<1 ms) ............................................................	400 mA
Power Dissipation ........................................................................	200 mW
Derate Linearly from 25°C ......................................................	2.6 mW/°C
Package
Package Power Dissipation........................................................	250 mW
Derate Linearly from 25°C ......................................................	3.3 mW/°C
Isolation Test Voltage (between emitter and detector
referred to standard climate 23°C/50%RH, DIN 50014)5300 VACRMS
Creepage..................................................................................	min. 7 mm
Clearance .................................................................................	min. 7 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1.........................................................	175
Isolation Resistance	≥1012 Ω
VIO=500 V, TA=25°C .........................................................................
VIO=500 V, TA=100°C.......................................................................	≥1011 Ω
Storage Temperature ....................................................	–40°C to +150°C
Operating Temperature.................................................	–40°C to +100°C
Junction Temperature .....................................................................	100°C
Soldering Temperature (2 mm from case bottom)..........................	260°C
5–1

This document was created with FrameMaker 4.0.4

Characteristics

	Symbol	Min	Typ	Max	Unit	Condition
Emitter
Forward Voltage	VF		1.25	1.65	V	IF=60 mA
Breakdown Voltage	VBR	6	30		V	IR=10 µA
Reverse Current	IR		0.01	10	µA	VR=6 V
Capacitance	CO		40		pF	VR=0 V, f=1 MHz
Thermal Resistance Junction to Lead	RTHJL		750		°C/W
Detector
Capacitance	CCE		6.8		pF	VCE=5 V, f=1 MHz
	CCB		8.5		pF	VCB=5 V, f=1 MHz
	CEB		11		pF	VEB=5 V, f=1 MHz
Collector-Emitter Leakage Current	ICEO		5	50	nA	VCE=10 V
Collector-Emitter Saturation Voltage	VCESAT		0.25			ICE=1 mA, IB=20 µA
Base-Emitter Voltage	VBE		0.65		V	VCE=10 V, IB=20 µA
DC Forward Current Gain	HFE	200	650	1800		VCE=10 V, IB=20 µA
Saturated DC Forward Current Gain	HFESAT	120	400	600		VCE=0.4 V, IB=20 µA
Thermal Resistance Junction to Lead	RTHJL		500		°C/W
Package Transfer Characteristics
IL1
Saturated Current Transfer Ratio
(Collector-Emitter)	CTRCESAT		75		%	IF=10 mA, VCE=0.4 V
Current Transfer Ratio
(Collector-Emitter)	CTRCE	20	80	300	%	IF=10 mA, VCE=10 V
Current Transfer Ratio
(Collector-Base)	CTRCB		0.25		%	IF=10 mA, VCB=9.3 V
IL2
Saturated Current Transfer Ratio			170		%	IF=10 mA, VCE=0.4 V
(Collector-Emitter)	CTRCESAT
Current Transfer Ratio
(Collector-Emitter)	CTRCE	100	200	500	%	IF=10 mA, VCE=10 V
Current Transfer Ratio	CTRCB		0.25		%	IF=10 mA, VCB=9.3 V
IL5
Saturated Current Transfer Ratio
(Collector-Emitter)	CTRCESAT		100		%	IF=10 mA, VCE=0.4 V
Current Transfer Ratio
(Collector-Emitter)	CTRCE	50	130	400	%	IF=10 mA, VCE=10 V
Current Transfer Ratio	CTRCB		0.25		%	IF=10 mA, VCB=9.3 V
Isolation and Insulation
Common Mode Rejection Output High	CMH		5000		V/µs	VCM=50 VP-P, RL=1 kΩ, IF=0 mA
Common Mode Rejection Output Low	CML		5000		V/µs	VCM=50 VP-P, RL=1 kΩ, IF=10
						mA
Common Mode Coupling Capacitance	CCM		0.01		pF
Package Capacitance	CI-O		0.6		pF	VI-O=0 V, f=1 MHz
Insulation Resistance	R		10+14		Ω	V	I-O	=500 V
	S

IL1/2/5

5–2