Silicon Switching Diodes |
BAW 79 A |
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… BAW 79 D |
●For high-speed switching
●High breakdown voltage
●Common cathode
Type |
Marking |
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Ordering Code |
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Pin Configuration |
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Package1) |
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(tape and reel) |
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BAW 79 A |
GE |
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Q62702-A781 |
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SOT-89 |
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BAW 79 B |
GF |
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Q62702-A782 |
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BAW 79 C |
GG |
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Q62702-A771 |
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BAW 79 D |
GH |
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Q62702-A733 |
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Maximum Ratings per Diode |
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Parameter |
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Symbol |
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Values |
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Unit |
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BAW |
BAW |
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BAW |
BAW |
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Reverse voltage |
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VR |
50 |
100 |
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200 |
400 |
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V |
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Peak reverse voltage |
VRM |
50 |
100 |
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200 |
400 |
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Forward current |
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IF |
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1 |
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A |
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Peak forward current |
IFM |
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1 |
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Surge forward current |
IFS |
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10 |
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t = 1 μs |
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Total power dissipation |
Ptot |
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1 |
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W |
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TS = 115 ˚C |
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Junction temperature |
Tj |
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150 |
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˚C |
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Storage temperature range |
Tstg |
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– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
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≤ 175 |
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K/W |
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Junction - soldering point |
Rth JS |
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≤ 35 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
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