Silicon Switching Diodes |
BAS 19 |
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… BAS 21 |
● High-speed, high-voltage switch |
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Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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BAS 19 |
JPs |
Q62702-A95 |
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SOT-23 |
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BAS 20 |
JRs |
Q62702-A113 |
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BAS 21 |
JSs |
Q62702-A79 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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BAS 19 |
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BAS 20 |
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BAS 21 |
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Reverse voltage |
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VR |
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100 |
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150 |
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200 |
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V |
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Peak reverse voltage |
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VRM |
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120 |
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200 |
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250 |
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Forward current |
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IF |
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250 |
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mA |
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Peak forward current |
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IFM |
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625 |
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Total power dissipation, TS = 70 ˚C |
Ptot |
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350 |
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mW |
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Junction temperature |
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Tj |
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150 |
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˚C |
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Storage temperature range |
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Tstg |
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– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
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Rth JA |
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≤ 300 |
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K/W |
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Junction - soldering point |
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Rth JS |
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≤ 230 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
07.94 |
BAS 19 … BAS 21
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Breakdown voltage1) |
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V(BR) |
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V |
I(BR) = 100 μA |
BAS 19 |
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120 |
– |
– |
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BAS 20 |
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200 |
– |
– |
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BAS 21 |
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250 |
– |
– |
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Forward voltage |
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VF |
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IF = 100 mA |
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– |
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1 |
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IF = 200 mA |
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1.25 |
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Reverse current |
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IR |
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VR = VR max |
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100 |
nA |
VR = VR max; Tj = 150 ˚C |
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– |
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100 |
μA |
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AC characteristics |
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Diode capacitance |
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CD |
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5 |
pF |
VR = 0 V, f = 1 MHz |
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Reverse recovery time |
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trr |
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50 |
ns |
IF = 30 mA, IR = 30 mA, RL = 100 Ω |
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measured at IR = 3 mA |
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Test circuit for reverse recovery time |
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Pulse generator: tp = 100 ns, D = 0.05 |
Oscillograph: R = 50 Ω |
tr = 0.6 ns, Rj = 50 Ω |
tr = 0.35 ns |
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C ≤ 1 pF |
1) Pulse test: tp ≤ 300 μs, D = 2 %.
Semiconductor Group |
2 |
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