SHANGHAI SUNRISE ELECTRONICS ES1B, ES1D, ES1C, ES1E, ES1G Datasheet

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

)

(

)

)

(

)

)

ES1A THRU ES1G

SURFACE MOUNT SUPER

FAST SWITCHING RECTIFIER

VOLTAGE: 50 TO 400V CURRENT: 1.0A

FEATURES

• Ideal for surface mount pick and
place application

• Low profile package

• Built-in strain relief

• High surge capability

• Glass passivated chip

• Super fast recovery for high efficiency

• High temperature soldering guaranteed:

o

260

C/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy

• Polarity: Color band denotes cathode

MAX. .110

MIN. .100(2.54).157(3.99).052(1.32).006(0.152

MAX. .208

MIN. .194(4.93).078(1.98).004(0.102).030(0.76

TECHNICAL

SPECIFICATION

SMA/DO-214AC

B

CA

D

F

G

ABCD

2.79).177(4.50).058(1.47).012(0.305

EFGH

5.28).090(2.29).008(0.203).060(1.52

Dimensions in inches and (millimeters

H

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)

RATINGS

Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T

=110oC)

L

Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current

(at rated DC blocking voltage)
Maximum Reverse Recovery Time (Note 1) trr nS
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I

2.Measured at 1.0 MHz and applied voltage of 4.0V

3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

T

=25oC

=100oC

T

a

=0.5A, IR=1.0A,Irr=0.25A.

F

SYMBOL ES1A ES1B ES1C ES1D ES1E ES1G UNITS

V

RRM

V

RMS

V

I

F(AV)

I

FSM

V

I

C

R

θ

T

STG,TJ

DC

F

R

J

(ja)

50 100 150 200 300 400 V
35 70 105 140 210 280 V
50 100 150 200 300 400 V

1.0 A

30 A

0.95 1.25 V

5.0

200

35
10
40

-50 to +150

dc

µA
µA

pF

o

C/W

o

C

http://www.sse-diode.com