SGS Thomson Microelectronics T1630W, T1620W Datasheet

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T1620W
FEATURES
=16A
I
TRMS
V
DRM=VRRM
=400V to 700V EXCELLENTSWITCHINGPERFORMANCES INSULATINGVOLTAGE= 1500V
(RMS)
U.L. RECOGNIZED: E81734
DESCRIPTION
The T1620/1630W triacs use high performance glasspassivatedchip technology,housedin afully moldedplasticISOWATT220ABpackage.
TM
The SNUBBERLESS
concept offers suppres­sion of R-C network, and is suitable for applica­tions such as phase control and static switch on inductiveand resistive loads.
T1630W
SNUBBERLESS TRIAC
A
2
A
1
G
A
1
A
2
G
ISOWATT220AB
(Plastic)
ABSOLUTERATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-statecurrent
Tc= 75°C16A
I
TSM
Non repetitivesurgepeak on-state current (T
initial= 25°C)
j
tp = 16.7 ms
(1 cycle, 60 Hz)
tp =10 ms
165 A
195
(1/2 cycle, 50 Hz)
2
tI
I
dI/dt Criticalrateof rise of on-state current
2
t Value(half-cycle,50 Hz) tp =10 ms 190 A2s
Gate supply: I
=500mA dIG/dt =1A/µs.
G
Repetitive
F = 50Hz
20 A/µs
NonRepetitive 100
T
stg
T
j
Storagetemperaturerange Operatingjunctiontemperature range
Tl Maximumlead temperaturefor soldering during 10s at4.5 mm
- 40to +150
- 40to +125 260 °C
from case
Symbol Parameter
T1620/ 1630-xxxW
400 600 700
°C
Unit
V
DRM
V
RRM
April 1995
Repetitivepeak off-statevoltage T
=125°C
j
400 600 700 V
1/5
T1620W / 1630W
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 50 °C/W Rth(j-c) Junction to casefor A.C (360°conductionangle) 2.5 °C/W
GATE CHARACTERISTICS (maximumvalues) P
=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)
G (AV)
ELECTRICALCHARACTERISTICS
Symbol TestConditions Quadrant T1620 T1630 Unit
I
GT
V
GT
V
GD
tgt V
I
*I
H
V
TM
I
DRM
I
RRM
VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20 30 mA VD=12V (DC) RL=33 Tj= 25°C I-II-III MAX 1.5 V VD=V
DRMRL
D=VDRMIG
/dt= 3Aµs
dl
G
= 250mA Gateopen Tj=25°C MAX 35 50
T
=3.3k Tj= 125°C I-II-III MIN 0.2 V
=500mA
Tj= 25°C I-II-III TYP 2 µs
*ITM= 22.5A tp= 380µs Tj= 25°C MAX 1.5 V
VDRMrated V
rated
RRM
Tj= 25°C MAX 10 µA
Tj= 125°C MAX 2 mA
dV/dt* Linearslopeup to
=67%V
V
D
DRM
Gate open
Tj= 125°C MIN 200 300 V/µs
(dV/dt)c* (dI/dt)c= 9 A/ms (see note) Tj= 125°C MIN 10 20 V/µs
* For either polarity of electrode A2voltage with referenceto electrode A1. Note : Inusual applications where (dI/dt)c is below 9 A/ms, the(dV/dt)c is alwayslower than 10V/µs, and,therefore, it isunnecessary to use a
snuber R-C network accross T1620W / T1630W triacs.
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