Ordering number : ENN7129
MCH3109 / MCH3209
PNP / NPN Silicon Epitaxial Planar Transistors
MCH3109 / MCH3209
DC / DC Converter Applications
Applications |
Package Dimensions |
• Relay drivers, lamp drivers, motor drivers, strobes. |
unit : mm |
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2194A |
Features
•Adoption of MBIT processes.
•High current capacitance.
•Low collector-to-emitter saturation voltage.
•High-speed switching.
•Ultrasmall package facilitates miniaturization in end products (0.85mm).
•High allowable power dissipation.
Specifications ( ) : MCH3109
Absolute Maximum Ratings at Ta=25°C
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[MCH3109 / MCH3209] |
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0.25 |
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0.3 |
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0.15 |
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3 |
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2.1 |
1.6 |
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0.25 |
2 |
1 |
0.07 |
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0.65 |
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2.0 |
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3 |
1 : Base |
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(Bottom view) |
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2 : Emitter |
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0.85 |
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3 : Collector |
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1 |
2 |
SANYO : MCPH3 |
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(Top view) |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(--30)40 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(--)30 |
V |
Emitter-to-Base Voltage |
VEBO |
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(--)5 |
V |
Collector Current |
IC |
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(--)3 |
A |
Collector Current (Pulse) |
ICP |
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(--)5 |
A |
Base Current |
IB |
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(--)600 |
mA |
Collector Dissipation |
PC |
Mounted on a ceramic board(600mm2 0.8mm) |
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0.8 |
W |
Junction Temperature |
Tj |
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150 |
°C |
Storage Temperature |
Tstg |
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--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(--)30V, IE=0 |
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(--)0.1 |
μA |
Emitter Cutoff Current |
IEBO |
VEB=(--)4V, IC=0 |
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(--)0.1 |
μA |
DC Current Gain |
hFE |
VCE=(--)2V, IC=(--)500mA |
200 |
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560 |
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Gain-Bandwidth Product |
fT |
VCE=(--)10V, IC=(--)500mA |
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(380)450 |
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MHz |
Output Capacitance |
Cob |
VCB=(--)10V, f=1MHz |
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(25)20 |
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pF |
Marking : MCH3109 : AJ / MCH3209 : CJ |
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Continued on next page. |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3372, 3373 No.7129-1/5
MCH3109 / MCH3209
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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VCE(sat)1 |
IC=(--)1.5A, IB=(--)30mA |
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(--155) |
(--230) |
mV |
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Collector-to-Emitter Saturation Voltage |
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120 |
180 |
mV |
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VCE(sat)2 |
IC=(--)1.5A, IB=(--)750mA |
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(--)105 |
(--)155 |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(--)1.5A, IB=(--)30mA |
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(--)0.83 |
(--)1.2 |
V |
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Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(--)10mA, IE=0 |
(--30)40 |
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V |
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Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(--)1mA, RBE=¥ |
(--)30 |
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V |
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Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(--)10mA, IC=0 |
(--)5 |
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V |
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Turn-ON Time |
ton |
See specified Test Circuit. |
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(50)30 |
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ns |
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Storage Time |
tstg |
See specified Test Circuit. |
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(270)300 |
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ns |
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Fall Time |
tf |
See specified Test Circuit. |
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(25)15 |
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ns |
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Switching Time Test Circuit
PW=20µs |
IB1 |
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OUTPUT |
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D.C.≤ 1% |
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IB2 |
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INPUT
VR
50Ω
RB |
RL |
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+ |
+ |
100µF |
470µF |
VBE= --5V VCC=12V
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed.)
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--2.0 |
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A |
--1.6 |
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-- |
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C |
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I |
--1.2 |
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Current, |
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Collector |
--0.8 |
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--0.4 |
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0 |
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0 |
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--3.5 |
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--3.0 |
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A |
--2.5 |
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-- |
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C |
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I |
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Current, |
--2.0 |
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Collector |
--1.5 |
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--1.0 |
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--0.5 |
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0 |
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0 |
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IC -- VCE
-- |
40mA |
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-- |
50mA |
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--
30mA
20mA --
MCH3109
--10mA |
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--8mA |
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--6mA |
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--4mA |
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--2mA |
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I |
B |
=0 |
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--200 |
--400 |
--600 |
--800 |
--1000 |
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Collector-to-Emitter Voltage, VCE |
-- mV IT03993 |
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IC -- VBE |
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MCH3109 |
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VCE= --2V |
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C |
C |
C |
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° |
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° |
° |
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Ta=75 |
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25 |
25 |
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-- |
--0.2 |
--0.4 |
--0.6 |
--0.8 |
--1.0 |
--1.2 |
Base-to-Emitter Voltage, VBE |
-- V |
IT03995 |
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Collector Current, IC -- A
Collector Current, IC -- A
2.0
1.6
1.2
0.8
0.4
0
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
IC -- VCE
30mA |
20mA |
10mA |
8mA |
6mA |
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50mA |
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4mA |
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2mA |
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MCH3209 |
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IB=0 |
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200 |
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400 |
600 |
800 |
1000 |
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Collector-to-Emitter Voltage, VCE -- mV IT03994 |
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IC -- VBE |
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MCH3209 |
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VCE=2V |
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C C C |
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° ° ° |
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Ta=75 |
25 |
25 |
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-- |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
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Base-to-Emitter Voltage, VBE |
-- V |
IT03996 |
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No.7129-2/5
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