Samsung Q10 Schematic
4
SAMSUNG PROPRIETARY
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3
3
2
12 1
D
D
1.
2.
D
D
3.
4.
5.
6.
CETUS
7.
8.
9.
10.
11.
CPU :
BANIAS LV
12.
13.
C
C
Chip Set :
Remarks :
855GM
14.
15.
16.
C
C
17.
18.
19.
20.
21.
Model Name :
PCB Code :
Dev. Step :
B
B
Revision :
T.R. Date :
CETUS Main
BA41-xxxxxx
MP
0.5
2003. 4. 24
22.
23.
24.
25.
26.
27.
28.
29.
30.
B
B
31.
DRAW
WS JUNG
A
A
4
4
CHECK
HJ KIM
APPROVAL
Kevin
3
3
A
A
SAMSUNG
ELECTRONICS
2
2
1
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
4
Docking
CRT
SPDIF
B
RJ-45(10/100)
FDD/ODD
/2ND HDD
(FACTORY OPTION)
1394 (port 1)
A
Clocking
Clock generator
RJ-11
SPKR
HP JACK
MIC JACK
RJ-45(10/100)
LAN switch
p24
p24
p23
p23
p24
AMP
p4
LCD
CRT
MDC
CS4202
LOM
KINNERITH+
82562EZ
1394 (port 0)
p20
EEPROM
p20
THERMISTER
ADM1032
p19
p19
#1
p24
#0
p24
EEPROM
p22
3
p5
AC LINK
(AC97 2.2)
p22
CardBus +
1394 Lynx+PHY
R5C591
p20,p21
GMCH-M
855GM
p7,p8,p9,p10
ICH4 - M
82801 DBM 1.5V
p15,p16,p17
PCI BUS
CPU
BaniasLV
400MHZ
(100MHZ, 4*)
(1.2V)
HI 1.5
Mini PCI
CONN
p30
WLAN/Bluetooth
p5,p6
266DDR
USB
LPC
2
IDE0
FWH
p18
82802A
MICOM
Hitachi 2160
p25
87391
p29
HDD
p28
On Board
256MB/128MB
p11,p13,p14
SODIMM
Max 1GB
p12
USB (port 1)
BLUETOOTH
port3
Internal KBD
p29
Touch Pad
p29
FIR(Option)
p29
p30
p28
1
D
Docking
CC
2 USB (port4,5)
PS/2
B
SIO
PIO
A
SAMSUNG
SD(MMC) + MS
4
3
CARD BUS
p21 p21
2
1
SAMSUNG
ELECTRONICS
ELECTRONICS
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
3
24
1
SCHEMATIC ANNOTATIONS AND BOARD INFORMATION
PCI Devices
Devices IDSEL#
Cardbus
LAN
MiniPCI SLOT1 BANIAS/MGM Processor System Bus(PSB) Termination (1.05V)VCCP
USB
Hub to PCI
LPC bridge/IDE/AC97/SMBUS
AGP
Internal MAC
AC Link - B-
I2 C / SMB Address
C
Devices
ICH4M
SODIMM0
MICOM Master - SMBUS Master
ADM1032
Battery 0001 011x 16h System Battery
USB PORT Assign
B
PORT NUMBER ASSIGNED TO
0
1
2
3
4
5
SYSTEM PORT LEFT
SYSTEM PORT RIGHT
Docking
BLUETOOTH
Docking
Docking
POWER
MICOM_P3V
MICOM ICH4
A
P5V_AUX
ICH4
P3.3V_AUX
MINI-PCI
MDC
P2.5V_AUX
MGM
SODIMM
AD19
AD21
AD20
AD29(internal)
AD30(internal)
AD31(internal)
AD17(internal)
AD24(internal)
Address
Master
1010 001x
0100 110x
P1.5V_AUX
ICH4
REQ/GNT#
0
1
2
-
-
-
-
-
Hex
-
A2h
4Ch
P3.3V P5VP1.8V
CPU
5C591
5C591
MINI-PCI
SODIMM
MICOM
S/IO
FWH
HDD HDD
FIR
CLOCK
THERMISTER
BLUETOOTH
Interrupts
A,B,C
D
E,F
USB2.0 : H
#0 : A
#1 : D
#2 : C
B
A,B
E
Bus
SMBUS Master
Clock, Unused Clock Output DisableD2hCK-408 (Clock Generator) 1101 001x
Photo snesor72hTSL2550 0111 001x
Thermal Sensor ( CPU )
P1.5V VCCP
MGM
ICH4
ICH4
5C591
MINI-PCI
STAC9750
MDC
MICOM
VCC_CORE
CPU
CPUICH4
MGM
VCC_MCH
CPU
MGM
Voltage Rails
VDC
VCC_CORE
P1.5V
P1.8V
P2.5V
P2.5V_AUX
P1.25V
MICOM_P3V
P3.3V
P3.3V_AUX
P5V
P5V_AUX
Primary DC system power supply (9 to 12V)
Core voltage for BANIAS CPU (1.356 - 0.844V)
MCH-M Core Voltage (1.2V)VCC_MCH
1.5V switched power rail (off in S3-S5)
1.8V switched power rail (off in S3-S5)
2.5V switched power rail (off in S3-S5)
2.5V power rail (off in S4-S5)
1.25V power rail (off in S4-S5)
3.3V always on power rail for MICOM
3.3V switched power rail (off in S3-S5)
3.3V power rail (off in S4-S5)
5.0V switched power rail (off in S3-S5)
5.0V power rail ( off in S4-S5)
CPU Core Voltage Table
VID4 VoltageVID3 VID2 VID1 VID0
VID5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Highest Freq.
0
0
0
1
0
1
0
1
0
1
0
1
0
1
1
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Low Voltage CPU
- Vcc (HFM = 1.1/1.2GHz) = 1.180V
- Vcc (LFM = 600MHz) = 0.956V
- 100MHz Geyserville III steps supported
- GV III points for LV Banias 1.1/1.2GHz = 600MHz, 800MHz, 900MHz, 1GHz, 1.1/1.2GHz
- 700MHz point not supported
- TDP = 12W, Iccmax = 12A
0
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
0
1
0
1
1
1
1
1
0
0
1
0
1
0
1
0
1
0
1
1
0
1
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
0
0
1
0
1
0
0
0
1
0
1
1
1
1
1
0
1
0
0
0
0
1
1
0
1
1
1
0
0
1
1
0
1
1
1
1
1
1
1
1
1.708 V
0
1.692 V
1
0
1.676 V
1
1.660 V
0
1.644 V
1.628 V
1
0
1.612 V
1
1.596 V
1
0
1.580 V
1.564 V
1
0
1.548 V
1.532 V
1
1.516 V
0
1.500 V
1
0
1.484 V
1
1.468 V
0
1.452 V
1.436 V
1
0
1.420 V
1
1.404 V
1.388 V
0
1.372 V
1
1.356 V
0
1.340 V
1
1
0
1.324 V
1.308 V
1
0
1.292 V
1
1.276 V
1.260 V
0
1.244 V
1
0
1.228 V
1.212 V
1
5C591
VID5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
VID20VID0
VID41VID30VID1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
1
0
1
0
1
0
0
0
0
1
1
0
1
0
1
1
1
10
1
0
1
0
0
0
1
1
0
1
1
1
0
1
1
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
0
0
1
1
0
0
00
1
0
1
0
1
1
1
0
1
1
0
1
0
1
0
0
0
1
1
1
0
1
1
0
1
1
0
1
1
1
1
1
1
1
Ultra Low Voltage CPU
- Vcc (HFM = 900MHz) = 1.004V
- Vcc (LFM = 600MHz) = 0.844V
- 100MHz Geyserville III steps supported
- GV III points for LV Banias 1.1GHz = 600MHz, 800MHz, 900MHz
- 700MHz point not supported
- TDP = 7W, Iccmax = 9A
DD
C
Voltage
0
1.196 V
Low Voltage Banias
1.180 V
1
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.164 V
1.148 V
1.132 V
1.116 V
1.100 V
1.084 V
1.068 V
1.052 V
1.036 V
1.020 V
1.004 V
0.988 V
0.972 V
0.956 V
0.940 V
0.924 V
0.908 V
0.892 V
0.876 V
0.860 V
0.844 V
0.828 V
0.812 V
0.796 V
0.780 V
0.764 V
0.748 V
0.732 V
0.716 V
0.700 V
VCC (HFM = 1.1/1.2GHz)
Ultra Low Voltage Banias
VCC (HFM = 900MHz)
Low Voltage Banias
VCC (LFM = 600MHz)
Ultra Low Voltage Banias
VCC (LFM = 600MHz)
Deeper Sleep
B
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
3
24
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3
2
1
D
HCB3216K-601T20
Be sure to follow A/W guide line!
CHP3_CPUSTP*
CHP3_PCISTP*
CHP3_SLPS1*
SMB3_CLK
C
IMVP4_PWRGD
B B
SMB3_DATA
CLK_CPU*
CLK_CPU
CLK_MCH*
CLK_MCH
CLK_CPUITP*
CLK_CPUITP
682088
Close to chip
CLK3_DREFSSCLK
CLK3_ICH66
CLK3_MCH66
CLK3_PCLKICH
CLK3_PCLKCB
CLK3_PCLKFWH
CLK3_PCLKSIO
CLK3_PCLKMICOM
CLK3_PCLKMIN
CLK3_DREF
CLK3_ICH48
CLK3_ICH14
CLK3_SIO14
48Mhz
D
C
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
4
3
2
1
A
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3
2
1
DD
CPU1_A*(16:3)
C
CPU1_ADSTB0*
CPU1_REQ*(4:0)
CPU1_A*(31:17)
CPU1_ADSTB1*
CPU1_ADS*
CPU1_BNR*
CPU1_BPRI*
CPU1_BREQ*
CPU1_DBSY*
CPU1_DEFER*
CPU1_DRDY*
CPU1_HIT*
CPU1_HITM*
CPU1_INIT* CPU1_DSTBP0*
CPU1_LOCK*
CPU1_TRDY*
CPU1_CPURST*
CPU1_RS2*
CPU1_RS1*
CPU1_RS0*
CPU1_A20M*
CPU1_FERR*
CPU1_IGNNE*
CPU1_INTR
CPU1_NMI
CPU1_SMI*
CPU1_STPCLK*
B
KBC3_THERM_SMCLK CPU2_THERMDA
KBC3_THERM_SMDATA
CPU1_D*(15:0)
CPU1_DSTBN0*
CPU1_D*(31:16)
CPU1_DBI1*
CPU1_DSTBN1*
CPU1_DSTBP1*
CPU2_THERMDCSMB3_ALERT*
CHP3_OVERT*
CPU1_D*(47:32)
CPU1_DBI2*CPU1_DBI0*
CPU1_DSTBN2*
CPU1_DSTBP2*
CPU1_D*(63:48)
CPU1_DBI3*
CPU1_DSTBN3*
CPU1_DSTBP3*
C
B
A
SAMSUNGSAMSUNG
ELECTRONICS
ELECTRONICS
4
3
2
1
A
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
D
CPU1_PWRGDCPU
CPU1_PROCHOT*
Placed as close as possible to
each of the four VCCA pins.
CLK_CPU
CLK_CPU*
CLK_CPUITP
CLK_CPUITP*
CPU1_SLP*
CPU1_DPSLP*
CPU1_DPWR*
CPU3_VID(5:0)
3
2
1
D
CPU1_GTLREF0
C
GTLREF : Keep the Voltage divider within 0.5"
of the First GTLREF0 with Z0= 55 ohm trace
Minimize coupling of any switching signals to this net
CPU1_PSI*
"ALL ITP I/F signals"
must have T.P.
PREQ,PRDY,BPM(0:3),TCK,TDI,TDO,TMS,TRST
"Mobile Platform Design Checklist rev. 0.94 page19"
220uF * 4, 10uF *35
B
220uF = 12mohm(Max/4) 3.5nH/4
10uF = 5mohm(typ/35) 0.6nH/4
CPU2_THERMDA
CPU2_THERMDC
CPU1_THRMTRIP*
VOS-
TEST3
PSI*
STUFFING OPTION
COMP 0 , 2 <(COMP 1,3) should be connected
Z0=27.4 ohm (55 ohm) trace shorter than
1/2 " to their respective Banias Pins
C
B
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
4
3
2
1
A
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
D
Trace should be 10 mil,20mil spacing.
GMCH1_HYSWING
CPU1_A*(31:3)
3
CPU1_ADS*
CPU1_TRDY*
CPU1_DRDY*
CPU1_DEFER*
CPU1_HITM*
CPU1_HIT*
CPU1_LOCK*
CPU1_BREQ*
CPU1_BNR*
CPU1_BPRI*
CPU1_DBSY*
CPU1_RS0*
CPU1_RS1*
CPU1_RS2*
CPU1_D*(63:0)
GMCH1_HAVREF
GMCH1_HCCVREF
12
D
C
GMCH1_HDVREF
C
Trace should be 10 mil,20mil spacing.
GMCH1_HXSWING
CPU1_REQ*(4:0)
CPU1_ADSTB0*
RCOMP reference voltage
Routing : 10 mil trace, 20 mil space
CPURST* Length
GMCH-CPU : 1.0" ~ 6.0"
GMCH-R-ITP : 12.0" max
A
CPU1_ADSTB1*
CLK_MCH*
CLK_MCH
GMCH1_HYSWING
GMCH1_HXSWING
CPU1_DSTBP0*
CPU1_DSTBN0*
CPU1_DBI0*
CPU1_DSTBP1*
CPU1_DSTBN1*
CPU1_DBI1*
CPU1_DSTBP2*
CPU1_DSTBN2*
CPU1_DBI2*
CPU1_DSTBP3*
CPU1_DSTBN3*
CPU1_DBI3*
CPU1_CPURST*
GMCH1_HDVREF
GMCH1_HCCVREF
GMCH1_HAVREF
HUB1_HL(0:10)
HLZCOMP
HUB1_REF_GMCH
GMCH1_PSWING
HUB1_STB*
HUB1_STB
Checklist rev0.94
GMCH1_PSWING
HUB1_REF_GMCH
800mV +/- 8%
near component
350mV +/- 8%
near component
near divider
near divider
SAMSUNG
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICSELECTRONICS
BB
A
4
3
2
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3
2
1
D
MEM2_MD(63:0)
C
B
MEM2_DQS(7:0)
MEM2_MAA(12:0)
MEM2_CKE0
MEM2_CKE1
MEM2_CKE2
MEM2_CSA0*
MEM2_CSA1*
MEM2_CSA2*
MEM2_BS0
MEM2_BS1
MEM2_SRASA*
MEM2_SCASA*
MEM2_SWEA*
CLK2_MCLK0
CLK2_MCLK0*
CLK2_MCLK1
CLK2_MCLK1*
CLK2_MCLK3
CLK2_MCLK3*
CLK2_MCLK4
CLK2_MCLK4*
MEM2_DM(7:0)
MEM2_MAB(2:1)
MEM2_MAB(5:4)
SODIMM 0
SODIMM 0
On Board : 256MB
SODIMM 0
SODIMM 0
On Board : 256MB
SODIMM0
ON BOARD
GMCH1_SMRCOMP
GMCH1_SMVSWINGL
D
C
B
If ECC support is not implemented,
SDQ[71:64], SDM8, SDQS8
SCK2/2*, SCK5/5*, these signal are NC.
GMCH1_SMRCOMP
GMCH1_SMVSWINGL
GMCH1_SMVSWINGH
A
Used to measure timing for the read data
Both signals should have vias located adjacent to the package
3
24
GMCH1_SMVSWINGH
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3
2
1
D
As short as possible
T-topology
VGA3_HSYNC
VGA3_VSYNC
VGA3_DDCC
VGA3_DDCD
VGA3_CLKVGA3_CLK+
VGA3_A0VGA3_A0+
VGA3_A1VGA3_A1+
VGA3_A2VGA3_A2+
CHP3_DCKIN*
DCK_VGA3_BLUE
DCK_VGA3_GREEN
DCK_VGA3_RED
VGA3_BLUE
VGA3_GREEN
VGA3_RED
C
DVO1_DPMS
CHP3_SUSCLK
VGA3_BKLTON
VGA3_LCDVDDON
CLK3_DREF
CLK3_DREFSSCLK
B
Place near GMCH
DVO1_DPMS
AGP3_BUSY*
CLK3_MCH66
-10mil wide
-20mil spacing
CPU1_DPWR*
CPU1_DPSLP*
PCI3_RST*
IMVP4_PWRGD
D
C
B
GST2
A
SAMSUNG
SAMSUNG
ELECTRONICSELECTRONICS
4
3
2
1
A
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
3
124
D
C
VCCADPLLA
VCCADPLLB
VCCADPLLA VCCADPLLB
Place two caps near MGM ACAP
B
D
C
B
VCCASM
VCCQSM
A
4
3
VCCQSM
VCCASM
2
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
D
MEM2_RMAA(0)
MEM2_MAB(2:1)
MEM2_RMAA(3)
MEM2_MAB(5:4)
MEM2_RMAA(12:6)
3
D0
MEM2_RMD(15:0)
2
MEM2_RMAA(0)
MEM2_MAB(2:1)
MEM2_RMAA(3)
MEM2_MAB(5:4)
MEM2_RMAA(12:6)
D1
1
MEM2_RMD(31:16)
D
MEM2_RBS0
MEM2_RBS1
MEM2_RSWEA*
MEM2_RSCASA*
MEM2_CSA2*
MEM2_RDM(1)
MEM2_RDM(0)
MEM2_RDQS(1)
MEM2_RDQS(0)
MEM2_CKE2
C
CLK2_MCLK3
CLK2_MCLK3*
Close to memory as you can!
MEM2_RMAA(0)
MEM2_MAB(2:1)
MEM2_RMAA(3)
MEM2_MAB(5:4)
MEM2_RMAA(12:6)
D2
MEM2_RMD(47:32)
B
MEM2_RBS0
MEM2_RBS1
MEM2_RSWEA*
MEM2_RSCASA*
MEM2_RSRASA*
MEM2_CSA2*
MEM2_RDM(5)
MEM2_RDM(4)
MEM2_RDQS(5)
MEM2_RDQS(4)
MEM2_RBS0
MEM2_RBS1
MEM2_RSWEA*
MEM2_RSCASA*
MEM2_RSRASA*MEM2_RSRASA*
MEM2_CSA2*
MEM2_RDM(3)
MEM2_RDM(2)
MEM2_RDQS(3)
MEM2_RDQS(2)
MEM2_CKE2
Close to memory as you can!
MEM2_RMAA(0)
MEM2_MAB(2:1)
MEM2_RMAA(3)
MEM2_MAB(5:4)
MEM2_RMAA(12:6)
MEM2_RBS0
MEM2_RBS1
MEM2_RSWEA*
MEM2_RSCASA*
MEM2_RSRASA*
MEM2_CSA2*
MEM2_RDM(7)
MEM2_RDM(6)
MEM2_RDQS(7)
MEM2_RDQS(6)
C
D3
MEM2_RMD(63:48)
B
MEM2_CKE2
A
CLK2_MCLK4
CLK2_MCLK4*
4
Close to memory as you can!
3
MEM2_CKE2
Close to memory as you can!
2
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
1
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
4
3 2
1
D
MEM2_MAA(0)
MEM2_MAA(2:1)
MEM2_MAA(3)
MEM2_MAA(5:4)
MEM2_MAA(12:6)
MEM2_BS0
MEM2_BS1
MEM2_MD(63:0)
C
CLK2_MCLK0
CLK2_MCLK0*
CLK2_MCLK1*
CLK2_MCLK1
MEM2_CKE0
MEM2_CKE1
MEM2_SCASA*
MEM2_SRASA*
MEM2_SWEA*
MEM2_CSA0*
MEM2_CSA1*
SMB3_CLK
SMB3_DATA
MEM2_DM(7:0)
B
MEM2_DQS(7:0)
D
C
B
P/N : 3709-001193
SMBUS Addr : 1010000X
A
SAMSUNG
SAMSUNG
ELECTRONICS
ELECTRONICS
4
3
2
1
A
Loading...