ROHM 1N914B, 1N4448, 1N4150, 1N4148 Datasheet

1N4148 / 1N4150 / 1N4448 / 1N914B

Diodes

Switching diode

1N4148 / 1N4150 / 1N4448 / 1N914B

This product is available only outside of Japan.

!Applications

High-speed switching

!Features

1)Glass sealed envelope. (GSD)

2)High speed.

3)High reliability.

!Construction

Silicon epitaxial planar

!External dimensions (Units : mm)

	CATHODE BAND (BLACK)
		Type No.	φ 0.5±0.1
C		A
29±1	3.8±0.2	29±1	φ 1.8±0.2
ROHM : GSD
EIAJ : −
JEDEC : DO-35

!Absolute maximum ratings (Ta = 25°C)

		VRM	VR	IFM	IO	IF	IFSM	P	Tj	Topr	Tstg
	Type						1µs
		(V)	(V)	(mA)	(mA)	(mA)		(mW)	(°C)	(°C)	(°C)
							(A)
	1N4148	100	75	450	150	200	2	500	200	−65~+200	−65~+200
	1N4150	50	50	600	200	250	4	500	200	−65~+200	−65~+200
	1N4448	100	75	450	150	200	2	500	200	−65~+200	−65~+200
	(1N914B)

!Electrical characteristics (Ta = 25°C)

							VF (V)							BV (V) Min.			IR (µA) Max.			Cr (pF)	trr (ns)
	Type	@	@	@	@	@	@	@	@	@	@	@	@	@	@	@25°C		@150°C		VR=0	VR=6V
																					IF=10mA
		0.1mA	0.25mA	1mA	2mA	5mA	10mA	20mA	30mA	50mA	100mA	200mA	250mA	5µA	100µA					f=1MHz
																	VR (V)		VR (V)		RL=100Ω
	1N4148													75	100	0.025	20	50.0	20	4	4
							1.0									5.0	75
	1N4150			0.54			0.66			0.76	0.82	0.87		−	50	0.1	50	100.0	50	2.5	4
				0.62			0.74			0.86	0.92	1.0
	1N4448					0.62								−	100	0.025	20	50.0	20	4	4
	(IN914B)					0.72					1.0					5.0	75

The upper figure is the minimum VF and the lower figure is the maximum VF value.