Renesas QN7002 Schematic [ru]

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Data Sheet

 

 

 

 

 

 

QN7002

Rev.1.00

 

 

 

R07DS0269EJ0100

N-CHANNEL MOSFET FOR SWITCHING

Mar 11, 2011

Description

The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

Features

Directly driven by a 4.5 V power source.

Low on-state resistance

RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)

Ordering Information

Part Number

Lead Plating

Packing

Package

QN7002-T1B-AT

Pure Sn

3000p/Reel

SC-59 (Mini Mold)

Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Remark for Agent

ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”

Absolute Maximum Ratings (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC)

ID(DC)

200

mA

Drain Current (pulse) Note

ID(pulse)

±800

mA

Total Power Dissipation

PT

200

mW

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW ≤ 10 μs, Duty Cycle ≤ 1%

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge.

VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.

R07DS0269EJ0100 Rev.1.00

 

Page 1 of 6

Mar 11, 2011

 

 

 

 

QN7002

Electrical Characteristics (TA = 25°C)

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

 

 

1

μA

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

 

 

±10

μA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

 

2.5

V

Forward Transfer Admittance Note

| yfs |

VDS = 10 V, ID = 100 mA

150

 

 

mS

Drain to Source On-state Resistance Note

RDS(on)1

VGS = 10 V, ID = 100 mA

 

2.1

2.7

Ω

 

RDS(on)2

VGS = 4.5 V, ID = 50 mA

 

2.4

3.2

Ω

Input Capacitance

Ciss

VDS = 10 V,

 

20

 

pF

Output Capacitance

Coss

VGS = 0 V,

 

9

 

pF

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

 

2

 

pF

Turn-on Delay Time

td(on)

VDD = 10 V,

 

16

 

ns

Rise Time

tr

ID = 200 mA,

 

6.5

 

ns

Turn-off Delay Time

td(off)

VGS = 10 V,

 

82

 

ns

Fall Time

tf

RG = 10 Ω

 

32

 

ns

Total Gate Charge

QG

ID = 200 mA, VDD = 25 V, VGS = 10 V

 

2

 

nC

Body Diode Forward Voltage Note

VF(S-D)

IF = 200 mA, VGS = 0 V

 

0.86

 

V

Note Pulsed

Test Circuit Switching Time

D.U.T.

 

 

 

 

 

 

RL

VGS

 

 

 

 

 

 

 

90%

 

VGS

 

VGS

 

0 10%

 

RG

Wave Form

 

 

 

PG.

VDD

 

 

 

 

 

 

VDS

 

 

 

 

 

90%

 

 

90%

VGS

 

VDS

 

 

 

0

VDS

0

10%

10%

 

 

 

 

 

τ

Wave Form

 

 

 

 

 

td(on)

tr

td(off)

tf

 

 

τ = 1 μs

 

 

ton

 

toff

Duty Cycle ≤ 1%

 

 

 

 

 

R07DS0269EJ0100 Rev.1.00

 

Page 2 of 6

Mar 11, 2011

 

 

 

 

Renesas QN7002 Schematic

QN7002

Typical Characteristics (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

 

120

 

 

 

 

 

 

 

- %

100

 

 

 

 

 

 

 

Power

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

Rated

60

 

 

 

 

 

 

 

of

 

 

 

 

 

 

 

 

dT - Percentage

40

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

 

 

TA – Ambient Temperature - °C

 

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

 

1

 

 

 

 

 

0.9

 

 

 

 

A

0.8

VGS = 10 V

 

 

 

-

 

 

 

 

 

 

 

 

 

Current

0.7

 

 

 

 

0.6

4.5 V

 

 

 

 

 

 

 

Drain

0.5

 

 

 

 

 

 

 

0.4

 

 

 

 

ID -

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

0.1

 

 

 

Pulsed

 

0

 

 

 

 

 

0

2

4

6

8

VDS - Drain to Source Voltage - V

GATE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

- V

3

 

 

 

 

 

 

 

VDS = VGS

 

Voltage

 

 

 

 

2.5

 

 

ID = 250 μ A

 

 

 

 

 

 

 

 

 

 

- Gate Threshold

2

 

 

 

 

1.5

 

 

 

 

VGS(th)

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

-50

0

50

100

150

 

 

Tch - Channel Temperature - °C

 

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

- W

0.2

 

 

 

 

 

 

 

Dissipation

 

 

 

 

 

 

 

 

PT - Total Power

0.1

 

 

 

 

 

 

 

0.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

 

 

TA – Ambient Temperature - °C

 

FORWARD TRANSFER CHARACTERISTICS

 

1

VDS = 5 V

 

 

 

 

 

 

 

 

 

 

- A

 

Pulsed

 

 

 

 

0.1

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

TA = 125°C

 

Drain

0.01

 

 

 

75°C

 

 

 

 

 

25°C

 

ID -

 

 

 

 

−25°C

 

 

0.001

 

 

 

 

 

 

0.0001

 

 

 

 

 

 

0

1

2

3

4

5

VGS - Gate to Source Voltage – V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

S

1

 

 

TA = −25°C

 

 

-

 

 

25°C

 

 

Admittance

 

 

75°C

 

 

125°C

 

 

 

 

 

Transfer

0.1

 

 

 

 

 

- Forward

 

VDS = 10 V

 

 

Pulsed

 

yfs |

 

 

0.01

 

 

|

0.01

0.1

1

 

 

 

ID - Drain Current - A

 

R07DS0269EJ0100 Rev.1.00

 

Page 3 of 6

Mar 11, 2011

 

 

 

 

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