RECTRON P4FMAJ160, P4FMAJ170, P4FMAJ33, P4FMAJ30A, P4FMAJ350A Datasheet

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEA TURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 400 watt surage capability at 1ms
* Excellent clamping capability
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
TVS
P4FMAJ
SERIES
DO-214AC
400 WATT PEAK POWER 1.0 WATT STEADY STATE
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At TA = 25
o
C unless otherwise noted)
DEVICES FOR BIPOLAR APPLICA TIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
1998-8
Ratings at 25
o
C ambient temperature unless otherwise specified.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
NOTES :
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
4. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 5.0V max. for devices of V(
BR
) > 200V.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C ( Note 2 )
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 25A for
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-65 to + 175
0
C
UNITS
unidirectional only ( Note 4 )
Amps
Peak Power Dissipation at T
A
= 25
o
C
, T
P
= 1mS ( Note 1 )
Minimum 400
40
3.5/6.5
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
I
PPM
AmpsSEE TABLE 1
Peak Forward Surge Current, 8.3mS single half sine wave-
superimposed on rated load ( JEDEC METHOD ) ( Note 3 )
P
M
(
AV
) 1.0 Watts
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