Philips S1A, S1D, S1J, S1G, S1M Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D168

S1 series

SMA controlled avalanche rectifiers

Product specification			2000 Feb 14

Philips Semiconductors	Product specification
SMA controlled avalanche rectifiers	S1 series

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Ideal for surface mount automotive applications

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙UL 94V-O classified plastic package

∙Shipped in 12 mm embossed tape

∙Marking: cathode, date code, type code

∙Easy pick and place.

LIMITING VALUES

DESCRIPTION

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads.

	lumns	cathode
		band
	k	a

Top view

Side view

MSA474

Fig.1 Simplified outline (DO-214AC) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	S1A		−		50	V
	S1B		−		100	V
	S1D		−		200	V
	S1G		−		400	V
	S1J		−		600	V
	S1K		−		800	V
	S1M		−		1000	V
VR	continuous reverse voltage
	S1A		−		50	V
	S1B		−		100	V
	S1D		−		200	V
	S1G		−		400	V
	S1J		−		600	V
	S1K		−		800	V
	S1M		−		1000	V

2000 Feb 14

2

Philips Semiconductors				Product specification
SMA controlled avalanche rectifiers					S1 series
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
VRMS	root mean square voltage
	S1A		-		35	V
	S1B		-		70	V
	S1D		-		140	V
	S1G		-		280	V
	S1J		-		420	V
	S1K		-		560	V
	S1M		-		700	V
IF(AV)	average forward current	averaged over any 20 ms period;	-		1	A
		Ttp = 110 °C; see Fig.2
IFSM	non-repetitive peak forward current	t = 8.3 ms half sine wave;
	S1A to S1J	Tj = 25 °C prior to surge;	-		30	A
	S1K and S1M	VR = VRRMmax	-		25	A
Tstg	storage temperature		-65		+175	°C
Tj	junction temperature	See Fig.3	-65		+175	°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
VF	forward voltage	IF = 1 A; see Fig.4	-	1.1	V
IR	reverse current	VR = VRRMmax; see Fig.5
		S1A to S1J	-	1	mA
		S1K and S1M	-	5	mA
		VR = VRRMmax; Tj = 165 °C; see Fig.5	-	50	mA
trr	reverse recovery time	when switched from IF = 0.5 A to IR = 1 A;	1	-	ms
		measured at IR = 0.25 A; see Fig.9
Cd	diode capacitance	VR = 4 V; f = 1 MHz; see Fig.6	8	-	pF

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-tp	thermal resistance from junction to tie-point; see Fig.7		27	K/W
Rth j-a	thermal resistance from junction to ambient	note 1	100	K/W
		note 2	150	K/W

Notes

1.Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ³35 mm.

2.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm. For more information please refer to the ‘General Part of associated Handbook’.

2000 Feb 14

3

Philips Semiconductors	Product specification
SMA controlled avalanche rectifiers	S1 series

GRAPHICAL DATA

MCD822

2 handbook, halfpage

IF(AV)

(A)

1.5
1
0.5
0
				120	160
0		40	80			200
					Ttp (°C)
VR = VRRMmax; δ = 0.5; a = 1.57.
Fig.2		Maximum permissible average forward

current as a function of tie-point temperature (including losses due to reverse leakage).

102	MCD795

handbook, halfpage

IF

(A)

10

1

10−1

10−2

10−3

0

0.5

1

1.5

2

2.5

VF (V)

Tj = 25 °C.

Fig.4 Forward current as a function of forward voltage; typical values.

MGD483

200
handbook, halfpage
Tj
(°C)
160
120
80
		D		G		J		K		M
40
0
0				400				800		1200
										VR (V)

Device mounted as shown in Fig.8.

Solid line: Al2O3 printed-circuit board.

Dotted line: epoxy printed-circuit board.

Fig.3 Maximum permissible junction temperature as a function of reverse voltage.

102					MCD802
handbook, halfpage
IR
		Tj = 165		°C
(μA)
10

1
10−1
10−2				Tj = 25 °C
10−3
		20	40	60			80	100
0

VR (%VRmax)

Fig.5 Reverse current as a function of reverse voltage; typical values.

2000 Feb 14

4