Philips ES1B, ES1D, ES1C, ES1A Datasheet

DISCRETE SEMICONDUCTORS

SMA ES1 series

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

2000 Jan 19

Philips Semiconductors	Product specification

Ultra fast low-loss

SMA ES1 series

controlled avalanche rectifiers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Ideal for surface mount automotive applications

DESCRIPTION

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads.

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙UL 94V-O classified plastic package

∙Shipped in 12 mm embossed tape

∙Marking: cathode, date code, type code

∙ Easy pick and place.			Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER		CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	ES1A			−	50	V
	ES1B			−	100	V
	ES1C			−	150	V
	ES1D			−	200	V
VR	continuous reverse voltage
	ES1A			−	50	V
	ES1B			−	100	V
	ES1C			−	150	V
	ES1D			−	200	V
VRMS	root mean square voltage
	ES1A			−	35	V
	ES1B			−	70	V
	ES1C			−	105	V
	ES1D			−	140	V
IF(AV)	average forward current		averaged over any 20 ms period;	−	1.0	A
			Ttp = 120 °C; see Fig.2
IFSM	non-repetitive peak forward current		t = 8.3 ms half sine wave;	−	25	A
			Tj = 25 °C prior to surge;
			VR = VRRMmax
Tstg	storage temperature			−65	+175	°C
Tj	junction temperature		See Fig.3	−65	+175	°C

2000 Jan 19

2

Philips Semiconductors	Product specification

Ultra fast low-loss

SMA ES1 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER		CONDITIONS		MIN.	TYP.	MAX.	UNIT
VF	forward voltage		IF = 1 A; see Fig.4		-	-	1.10	V
IR	reverse current		VR = VRRMmax; see Fig.5		-	-	5	mA
			VR = VRRMmax; Tj = 165 °C; see		-	-	100	mA
			Fig.5
trr	reverse recovery time		when switched from IF = 0.5 A to		-	-	25	ns
			IR = 1 A; measured at IR = 0.25 A;
			see Fig.9
Cd	diode capacitance		VR = 4 V; f = 1 MHz; see Fig.6		-	19	-	pF
THERMAL CHARACTERISTICS
SYMBOL		PARAMETER			CONDITIONS		VALUE	UNIT
Rth j-tp	thermal resistance from junction to tie-point; see Fig.7						27	K/W
Rth j-a	thermal resistance from junction to ambient				note 1		100	K/W
					note 2		150	K/W

Notes

1.Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ³35 mm.

2.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm. For more information please refer to the ‘General Part of associated Handbook’.

2000 Jan 19

3