Philips BA318, BA317, BA316 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BA316; BA317; BA318

High-speed diodes

Product specification			1996 Sep 03
Supersedes data of April 1996

Philips Semiconductors	Product specification
High-speed diodes	BA316; BA317; BA318
FEATURES	DESCRIPTION

∙Hermetically sealed leaded glass SOD27 (DO-35) package

∙High switching speed: max. 4 ns

∙General application

∙Continuous reverse voltage: 10 V, 30 V, 50 V

∙Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V

∙Repetitive peak forward current: max. 225 mA.

APPLICATIONS

∙ High-speed switching.

LIMITING VALUES

The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.

k

a

MAM246

The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage		−
	BA316		−	15	V
	BA317		−	40	V
	BA318		−	60	V
VR	continuous reverse voltage
	BA316		−	10	V
	BA317		−	30	V
	BA318		−	50	V
IF	continuous forward current	see Fig.2; note 1	−	100	mA
IFRM	repetitive peak forward current		−	225	mA
IFSM	non-repetitive peak forward current	square wave; Tj = 25 °C prior to
		surge; see Fig.4
		t = 1 μs	−	4	A
		t = 1 ms	−	1	A
		t = 1 s	−	0.5	A
Ptot	total power dissipation	Tamb = 25 °C; note 1	−	350	mW
Tstg	storage temperature		−65	+200	°C
Tj	junction temperature		−	200	°C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 03

2

Philips Semiconductors				Product specification
High-speed diodes		BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VF	forward voltage	see Fig.3
		IF = 1 mA	−	700	mV
		IF = 10 mA	−	850	mV
		IF = 100 mA	−	1100	mV
IR	reverse current	see Fig.5
	BA316	VR = 10 V	−	200	nA
		VR = 10 V; Tj = 150 °C	−	100	μA
	BA317	VR = 10 V	−	50	nA
		VR = 30 V	−	200	nA
		VR = 30 V; Tj = 150 °C	−	100	μA
	BA318	VR = 30 V	−	50	nA
		VR = 50 V	−	200	nA
		VR = 50 V; Tj = 150 °C	−	100	μA
Cd	diode capacitance	f = 1 MHz; VR = 0; see Fig.6	−	2	pF
trr	reverse recovery time	when switched from IF = 10 mA to	−	4	ns
		IR = 60 mA; RL = 100 Ω;
		measured at IR = 1 mA; see Fig.7
Vfr	forward recovery voltage	when switched from IF = 50 mA;	−	2.5	V
		tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-tp	thermal resistance from junction to tie-point	lead length 10 mm	240	K/W
Rth j-a	thermal resistance from junction to ambient	lead length 10 mm; note 1	500	K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 03

3