Philips 1N4007ID, 1N4006ID, 1N4005ID, 1N4004ID, 1N4002ID Datasheet

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Philips 1N4007ID, 1N4006ID, 1N4005ID, 1N4004ID, 1N4002ID Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D119

1N4001ID to 1N4007ID

Rectifiers

Product specification

1996 Jun 10

Supersedes data of April 1992

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

Rectifiers

1N4001ID to 1N4007ID

 

 

 

 

FEATURES

·Glass passivated

·High maximum operating temperature

·Low leakage current

·Excellent stability

·Available in ammo-pack.

DESCRIPTION

 

This package is hermetically sealed

Cavity free cylindrical glass package

and fatigue free as coefficients of

expansion of all used parts are

through Implotecä(1)

technology.

matched.

 

 

(1) Implotec is a trademark of Philips.

handbook, 4 columns

k

a

MAM123

Fig.1 Simplified outline (SOD81) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

 

 

 

 

1N4001ID

 

-

50

V

 

1N4002ID

 

-

100

V

 

1N4003ID

 

-

200

V

 

1N4004ID

 

-

400

V

 

1N4005ID

 

-

600

V

 

1N4006ID

 

-

800

V

 

1N4007ID

 

-

1000

V

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

 

 

 

1N4001ID

 

-

50

V

 

1N4002ID

 

-

100

V

 

1N4003ID

 

-

200

V

 

1N4004ID

 

-

400

V

 

1N4005ID

 

-

600

V

 

1N4006ID

 

-

800

V

 

1N4007ID

 

-

1000

V

 

 

 

 

 

 

IF(AV)

average forward current

averaged over any 20 ms

-

1.00

A

 

 

period; Tamb = 75 °C; see Fig.2

 

 

 

 

 

averaged over any 20 ms

-

0.75

A

 

 

period; Tamb = 100 °C; see Fig.2

 

 

 

IFRM

repetitive peak forward current

 

-

10

A

IFSM

non-repetitive peak forward current

half sinewave; 60 Hz

-

20

A

Tstg

storage temperature

 

-65

+175

°C

Tj

junction temperature

 

-65

+175

°C

1996 Jun 10

2

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