DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
1N4001ID to 1N4007ID
Rectifiers
Product specification |
1996 Jun 10 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Rectifiers |
1N4001ID to 1N4007ID |
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FEATURES
·Glass passivated
·High maximum operating temperature
·Low leakage current
·Excellent stability
·Available in ammo-pack.
DESCRIPTION |
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This package is hermetically sealed |
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Cavity free cylindrical glass package |
and fatigue free as coefficients of |
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expansion of all used parts are |
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through Implotecä(1) |
technology. |
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matched. |
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(1) Implotec is a trademark of Philips.
handbook, 4 columns |
k |
a |
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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1N4001ID |
|
- |
50 |
V |
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1N4002ID |
|
- |
100 |
V |
|
1N4003ID |
|
- |
200 |
V |
|
1N4004ID |
|
- |
400 |
V |
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1N4005ID |
|
- |
600 |
V |
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1N4006ID |
|
- |
800 |
V |
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1N4007ID |
|
- |
1000 |
V |
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VR |
continuous reverse voltage |
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|
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1N4001ID |
|
- |
50 |
V |
|
1N4002ID |
|
- |
100 |
V |
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1N4003ID |
|
- |
200 |
V |
|
1N4004ID |
|
- |
400 |
V |
|
1N4005ID |
|
- |
600 |
V |
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1N4006ID |
|
- |
800 |
V |
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1N4007ID |
|
- |
1000 |
V |
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IF(AV) |
average forward current |
averaged over any 20 ms |
- |
1.00 |
A |
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period; Tamb = 75 °C; see Fig.2 |
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averaged over any 20 ms |
- |
0.75 |
A |
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period; Tamb = 100 °C; see Fig.2 |
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IFRM |
repetitive peak forward current |
|
- |
10 |
A |
IFSM |
non-repetitive peak forward current |
half sinewave; 60 Hz |
- |
20 |
A |
Tstg |
storage temperature |
|
-65 |
+175 |
°C |
Tj |
junction temperature |
|
-65 |
+175 |
°C |
1996 Jun 10 |
2 |