Philips J110, J108, J109 Datasheet

DISCRETE SEMICONDUCTORS

J108; J109; J110

N-channel silicon junction FETs

Product specification

1996 Jul 30

Supersedes data of April 1995

File under Discrete Semiconductors, SC07

Philips Semiconductors	Product specification
N-channel silicon junction FETs	J108; J109; J110

FEATURES

∙High speed switching

∙Interchangeability of drain and source connections

∙Low RDSon at zero gate voltage (<8 Ω for J108).

APPLICATIONS

∙Analog switches

∙Choppers and commutators.

DESCRIPTION

N-channel symmetrical silicon junction field-effect transistors in a TO-92 package.

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.

QUICK REFERENCE DATA

PINNING - TO-92

PIN	SYMBOL	DESCRIPTION
1	g	gate
2	s	source
3	d	drain

1

handbook, halfpage2
3	d
	g
	s
	MAM197

Fig.1 Simplified outline and symbol.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage		−	±25	V
VGSoff	gate-source cut-off voltage	ID = 1 μA; VDS = 5 V
	J108		−3	−10	V
	J109		−2	−6	V
	J110		−0.5	−4	V
IDSS	drain current	VGS = 0; VDS = 5 V
	J108		80	−	mA
	J109		40	−	mA
	J110		10	−	mA
Ptot	total power dissipation	up to Tamb = 50 °C	−	400	mW

1996 Jul 30

2

Philips Semiconductors				Product specification
N-channel silicon junction FETs			J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
VDS	drain-source voltage		−		±25		V
VGSO	gate-source voltage	open drain	−		−25		V
VGDO	gate-drain voltage	open source	−		−25		V
IG	forward gate current (DC)		−		50		mA
Ptot	total power dissipation	up to Tamb = 50 °C	−		400		mW
Tstg	storage temperature		−65		150		°C
Tj	operating junction temperature		−		150		°C
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER		VALUE				UNIT
Rth j-a	thermal resistance from junction to ambient		250				K/W

STATIC CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)GSS	gate-source breakdown voltage	IG = −1 μA; VDS = 0	−	−	−25	V
VGSoff	gate-source cut-off voltage	ID = 1 μA; VDS = 5 V				V
	J108		−3	−	−10	V
	J109		−2	−	−6	V
	J110		−0.5	−	−4	V
IDSS	drain current	VGS = 0; VDS = 15 V
	J108		80	−	−	mA
	J109		40	−	−	mA
	J110		10	−	−	mA
IGSS	gate leakage current	VGS = −15 V; VDS = 0	−	−	−3	nA
IDSX	drain-source cut-off current	VGS = −10 V; VDS = 5 V	−	−	3	nA
RDSon	drain-source on-state resistance	VGS = 0; VDS = 100 mV
	J108		−	−	8	Ω
	J109		−	−	12	Ω
	J110		−	−	18	Ω

1996 Jul 30

3