PI3B16215
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2123456789012 |
3.3V, Hot Insertion, 20-Bit FET BusSwitch w/Precharged Outputs
Product Features
•Near Zero Propagation Delay
•5Ω Switches Connect Between Two Ports
•Fast Switching Speed: 4.5ns max.
•Permits Hot Insertion
•Isolation during Power-Off conditions
•B-Port Outputs are precharged by Bias Voltage to minimize signal distortion during live insertion
•Package options include:
–48-pin 150-mil wide plastic BQSOP (B)
–48-pin 240-mil wide plastic TSSOP (A)
–48-pin300-milwideplasticSSOP(V)
Logic Block Diagram
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1 |
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BIASV |
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2 |
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1A1 |
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46 |
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1B1 |
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SW |
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1A10 |
12 |
SW |
36 |
1B10 |
1OE |
48 |
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2A1 |
13 |
SW |
35 |
2B1 |
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2A10 |
24 |
SW |
25 |
2B10 |
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2OE |
47 |
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A B
Product Description
Pericom Semiconductor’s PI3B series of logic circuits are produced using the company’s advanced 0.35 micron CMOS Technology.
The PI3B16215 provides 20-bits of high-speed bus switching. Low on-state resistance of the switch allows connections to be made with minimal propagation delay. The device also precharges the B-port to a user-selectable bias voltage (BIASV) to minimize liveinsertion noise.
The device is organized as dual 10-bit bus switches with individual output-enable (OE) inputs. When OE is LOW, the corresponding 10-bit bus switch is on and port A is connected to port B. When OE is HIGH, the switch is open, a high-impedance state exists between the two ports, and port B is precharged to BIASV through the equivalent of a 10-kΩ resistor.
To ensure the high-impedance state on power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver connected to OE.
ProductPinConfiguration
BIASV |
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1 |
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48 |
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1OE |
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1A1 |
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2 |
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47 |
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2OE |
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1A2 |
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3 |
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46 |
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1B1 |
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1A3 |
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45 |
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1B2 |
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4 |
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1A4 |
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5 |
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44 |
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1B3 |
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1A5 |
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6 |
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43 |
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1B4 |
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1A6 |
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42 |
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1B5 |
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7 |
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GND |
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41 |
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GND |
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8 |
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1A7 |
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48-Pin |
40 |
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1B6 |
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9 |
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1A8 |
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39 |
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1B7 |
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10 |
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1A9 |
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A,B,V |
38 |
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1B8 |
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11 |
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1A10 |
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37 |
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1B9 |
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12 |
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2A1 |
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13 |
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36 |
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1B10 |
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2A2 |
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35 |
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2B1 |
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14 |
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Vcc |
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34 |
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2B2 |
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15 |
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2A3 |
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16 |
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33 |
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2B3 |
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GND |
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32 |
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GND |
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17 |
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2A4 |
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31 |
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2B4 |
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18 |
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2A5 |
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19 |
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30 |
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2B5 |
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2A6 |
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29 |
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2B6 |
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20 |
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2A7 |
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28 |
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2B7 |
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21 |
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2A8 |
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27 |
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2B8 |
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22 |
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2A9 |
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26 |
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2B9 |
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23 |
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2A10 |
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25 |
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2B10 |
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24 |
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OE
1 |
PS8190D |
05/04/00 |
PI3B16215 3.3V, Hot Insertion, 20-BitFETBusSwitchw/PrechargedOutputs
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 |
2123456789012 |
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 |
2123456789012 |
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
......................................Storage Temperature Range, TSTG |
–65ºC to +150ºC |
Supply Voltage Range, VCC ......................................... |
–0.5V to +4.6V |
Bias Voltage Range, BIASV ........................................ |
–0.5V to +4.6V |
Input Voltage Range ........................................................ |
–0.5V to +4.6V |
DC Output Current ....................................................................... |
120mA |
Power Dissipation ............................................................................ |
0.5W |
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Note:
Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 3.0V to 3.6V)
Parameter |
Description |
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Test Conditions |
Min. |
Typ. |
Max. |
Units |
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BIASV |
Bias Voltage |
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0 |
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VCC |
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VIH |
High-Level Control Input Voltage |
VCC = 2.7V to 3.6V |
2 |
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V |
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VIL |
Low-Level Control Input Voltage |
VCC = 2.7V to 3.6V |
–0.5 |
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0.8 |
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VIK |
Clamp Diode Voltage |
VCC = 3.0V |
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II = –18mA |
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–0.7 |
–1.2 |
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II |
Input Current |
VCC = 3.6V |
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VI = VCC or GND |
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±5 |
µA |
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IOZH |
High Impedance Output Current |
VCC = 0 |
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VI = VO = 0 to 3.6V |
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10 |
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IO |
Output Current |
VCC = 3.0V |
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BIASV = 2.4V, VO = 0 |
0.15 |
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mA |
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ICC |
Quiescent Power Supply Current |
VCC = 3.6V |
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IO = 0, VI = VCC or GND |
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10 |
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ICC(1) |
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One Input at 3V, |
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µA |
Supply Current |
VCC = 3.6V |
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Other Inputs at VCC or |
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750 |
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GND |
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CIN |
Input Capacitance |
VI = 3.0V or 0 |
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3.0 |
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pF |
COFF |
A/B Capacitance Switch Off |
VO = 3.0V or |
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Switch Off |
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8.5 |
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0 |
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VI = 0 |
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II = 64mA |
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5 |
8 |
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RON(2) |
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Ω |
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Switch On Resistance |
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II = 24mA |
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5 |
8 |
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VI = 2.4V |
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II = 15mA |
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10 |
15 |
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Notes:
1.This is the increase in supply current for each input (OE only) that is at the specified voltage level rather than VCC or GND.
2.Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On state resistance is determined by the lower of the voltages of the two (A or B) terminals.
TruthTable
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Function |
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OE |
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L |
A port = B port |
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H |
A port = Z, B Port = BIASV |
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2 |
PS8190D |
05/04/00 |