PRELIMINARY |
PDM31096 |
512K x 8-Bit
Features |
Description |
High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns
Low power operation
-PDM31096SA Active: 300 mA (Max) Standby: 25mW
Single +3.3V (±0.3V) power supply TTL-compatible inputs and outputs Packages
Plastic SOJ (400 mil) - SO Plastic TSOP (II) - T
The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is accomplished when the write enable (WE) and chip enable CE inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.
The PDM31096 operates from a single +3.3V power supply and all the inputs and outputs are fully TTLcompatible.
The PDM31096 is available in a 36-pin 400-mil plastic SOJ package and a 44-pin plastic TSOP (II) package.
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A 0 |
Decoder |
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Memory |
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Addresses |
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Matrix |
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A18 |
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I/O0 |
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Input |
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Column I/O |
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Data |
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Control |
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I/O7 |
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CE |
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WE |
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OE |
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Rev. 2.4 - 5/27/98 |
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PRELIMINARY |
PDM31096 |
Pin Configuration
TSOP (II)
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NC |
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1 |
44 |
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NC |
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NC |
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2 |
43 |
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NC |
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A4 |
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3 |
42 |
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NC |
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A3 |
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4 |
41 |
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A5 |
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A2 |
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5 |
40 |
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A6 |
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A1 |
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6 |
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A7 |
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A0 |
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7 |
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A8 |
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37 |
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CE |
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OE |
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I/OO |
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36 |
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I/O7 |
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I/O1 |
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10 |
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I/O6 |
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Vcc |
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11 |
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Vss |
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Vss |
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12 |
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Vcc |
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I/O2 |
13 |
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I/O5 |
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I/O3 |
14 |
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I/O4 |
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WE |
15 |
30 |
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A9 |
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A18 |
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A10 |
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A17 |
17 |
28 |
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A11 |
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A16 |
18 |
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A12 |
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A15 |
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A13 |
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A14 |
20 |
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NC |
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NC |
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NC |
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NC |
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NC |
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SOJ
Pin Description
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A4 |
1 |
36 |
NC |
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A3 |
2 |
35 |
A5 |
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A2 |
3 |
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A6 |
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A1 |
4 |
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A7 |
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A0 |
5 |
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A8 |
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CE |
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OE |
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I/O0 |
7 |
30 |
I/O7 |
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I/O1 |
8 |
29 |
I/O6 |
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Vcc |
9 |
28 |
Vss |
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Vss |
10 |
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Vcc |
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I/O2 |
11 |
26 |
I/O5 |
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I/O3 |
12 |
25 |
I/O4 |
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13 |
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A9 |
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WE |
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A18 |
14 |
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A10 |
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A17 |
15 |
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A11 |
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A16 |
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A12 |
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A15 |
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A13 |
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A14 |
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NC |
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Name |
Description |
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A18-A0 |
Address Inputs |
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I/O7-I/O0 |
Data Inputs/Outputs |
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Output Enable Input |
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OE |
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Write Enable Input |
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WE |
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Chip Enable Inputs |
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CE |
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NC |
No Connect |
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VCC |
Power (+3.3V) |
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VSS |
Ground |
Truth Table(1)
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OE |
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WE |
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CE |
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I/O |
MODE |
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X |
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X |
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H |
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Hi-Z |
Standby |
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X |
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X |
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Hi-Z |
Standby |
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L |
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H |
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L |
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DOUT |
Read |
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X |
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L |
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DIN |
Write |
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H |
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H |
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L |
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Hi-Z |
Output Disable |
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NOTE: 1. H = VIH, L = VIL, X = DON’T CARE
Absolute Maximum Ratings (1)
Symbol |
Rating |
Com’l. |
Ind. |
Unit |
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VTERM |
Terminal Voltage with Respect to VSS |
–0.5 to +4.6 |
–0.5 to +4.6 |
V |
TBIAS |
Temperature Under Bias |
–55 to +125 |
–65 to +135 |
°C |
TSTG |
Storage Temperature |
–55 to +125 |
–65 to +150 |
°C |
PT |
Power Dissipation |
1.0 |
1.0 |
W |
IOUT |
DC Output Current |
50 |
50 |
mA |
Tj |
Maximum Junction Temperature (2) |
125 |
145 |
°C |
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NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-
culation should be of the form: Tj = Ta + P * θja where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja value:
SOJ: 59o C/W
TSOP : TBD
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Rev. 2.4 - 5/27/98 |
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PRELIMINARY |
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PDM31096 |
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DC Electrical Characteristics (VCC = 3.3V ± 0.3V) |
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Test Conditions |
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Min. |
Max. |
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Unit |
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ILI |
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Input Leakage Current |
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VCC = Max., VIN = VSS to VCC |
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5 |
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A |
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ILO |
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Output Leakage Current |
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VCC = Max., |
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–5 |
5 |
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A |
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CE |
= VIH |
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VOUT = VSS to VCC |
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VIL |
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Input Low Voltage |
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–0.3(1) |
0.8 |
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V |
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VIH |
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Input High Voltage |
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2.2 |
Vcc+0.3 |
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V |
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VOL |
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Output Low Voltage |
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IOL = 8 mA, VCC = Min. |
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0.4 |
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V |
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VOH |
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Output High Voltage |
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IOH = –4 mA, VCC = Min. |
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2.4 |
— |
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V |
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NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns |
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Power Supply Characteristics |
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-10 |
-12 |
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-15 |
-20 |
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Symbol |
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Parameter |
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Com’l. |
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Com’l |
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Ind. |
Com’l |
Ind. |
Com’l |
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Ind. |
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Unit |
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ICC |
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Operating Current |
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230 |
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215 |
200 |
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220 |
160 |
200 |
120 |
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160 |
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mA |
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CE |
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f = fMAX = 1/tRC |
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VCC = Max. |
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IOUT = 0 mA |
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ISB |
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Standby Current |
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50 |
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45 |
40 |
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45 |
35 |
40 |
30 |
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35 |
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mA |
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CE |
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= VIH |
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f = fMAX = 1/tRC |
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VCC = Max. |
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ISB1 |
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Full Standby Current |
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10 |
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10 |
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15 |
10 |
15 |
10 |
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15 |
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CE |
≥ VCC – 0.2V |
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f = 0 |
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VCC |
= Max., |
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VIN ≥ VCC – 0.2V or ≤ 0.2V |
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NOTES: All values are maximum guaranteed values.
Capacitance(1) (T = +25°C, f = 1.0 MHz) |
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A |
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Symbol |
Parameter |
Max. |
Unit |
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CIN |
Input Capacitance |
8 |
pF |
COUT |
Output Capacitance |
8 |
pF |
NOTE: 1. This parameter is determined by device characterization but is not production tested.
Rev. 2.4 - 5/27/98 |
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