PARADIGM PDM41256LA12SOATR, PDM41256LA12SOI, PDM41256LA12SOITR, PDM41256LA12SOITY, PDM41256LA12SOTR Datasheet

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PARADIGM PDM41256LA12SOATR, PDM41256LA12SOI, PDM41256LA12SOITR, PDM41256LA12SOITY, PDM41256LA12SOTR Datasheet

PDM41256

256K Static RAM

32K x 8-Bit

Features

High-speed access times Com’l: 7, 8, 10, 12 and 15ns Ind’l: 8, 10, 12 and 15ns

(use 15ns for slower designs) Low power operation (typical)

-PDM41256SA Active: 475 mW Standby: 100 mW

-PDM41256LA Active: 425mW Standby: 25 mW

Single +5V (±10%) power supply TTL-compatible inputs and outputs Packages

Plastic SOJ (300 mil) - SO Plastic TSOP (I) - T

Description

The PDM41256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.

The PDM41256 operates from a single +5V power supply and all the inputs and outputs are fully TTLcompatible. The PDM41256 comes in two versions: the standard power version PDM41256SA and the low power version PDM41256LA. Both versions are functionally the same and differ only in their power consumption.

The PDM41256 is available in a 28-pin plastic TSOP

(I) and a 28-pin 300-mil plastic SOJ.

Functional Block Diagram

A 0

 

 

 

 

 

 

 

 

Decoder

Memory

 

 

Addresses •

 

Matrix

 

 

 

A 14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O0

 

• • • • •

Input

Column I/O

 

Data

 

Control

 

 

 

I/O7

 

 

 

 

 

CE

 

WE

 

 

OE

 

 

1

2

3

4

5

6

7

8

9

10

11

12

Rev. 4.4 - 4/29/98

1

PDM41256

Pin Configurations

 

 

 

SOJ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TSOP (I)

 

 

A14

1

28

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A10

A12

2

27

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

22

 

21

 

 

 

A13

A14-A0

Address Inputs

A11

 

23

 

20

CE

A7

3

26

 

 

A9

 

24

 

19

I/O7

A6

4

25

 

A8

 

 

 

 

 

 

A8

 

25

 

18

I/O6

 

I/O7-I/O0

Data Inputs/Outputs

 

A13

 

26

 

17

I/O5

A5

5

24

 

A9

 

 

 

 

 

WE

 

27

 

16

I/O4

A4

6

23

A11

OE

Output Enable Input

Vcc

 

28

 

15

I/O3

 

 

 

 

 

A14

 

1

 

14

Vss

A3

7

22

 

OE

 

 

WE

Write Enable Input

 

 

 

A12

 

2

 

13

I/O2

 

 

 

 

 

 

 

 

 

 

 

 

A7

 

3

 

12

I/O1

A2

8

21

A10

 

CE

Chip Enable Input

 

 

 

 

A6

 

4

 

11

I/O0

A1

9

20

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

VCC

Power (+5V)

 

A5

 

5

 

10

A0

A0

10

19

I/O7

 

 

 

A4

 

6

 

9

A1

 

VSS

Ground

 

 

 

 

 

18

 

 

 

 

 

A3

 

7

 

8

A2

I/O0

11

I/O6

 

 

 

 

 

 

 

 

 

 

 

 

I/O1

12

17

I/O5

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O2

13

16

I/O4

 

 

 

 

 

 

 

 

 

 

 

 

 

Vss

14

15

I/O3

 

 

 

 

 

Truth Table

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

WE

 

 

CE

 

I/O

MODE

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

H

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

L

 

DOUT

Read

 

X

 

 

L

 

 

L

 

DIN

Write

 

H

 

 

H

 

 

L

 

Hi-Z

Output Disable

 

 

 

 

 

 

 

 

 

 

 

NOTE: 1. H = VIH, L = VIL, X = DON’T CARE

Absolute Maximum Ratings (1)

Symbol

Rating

Com’l.

Ind.

Unit

 

 

 

 

 

VTERM

Terminal Voltage with Respect to Vss

–0.5 to +7.0

–0.5 to +7.0

V

TBIAS

Temperature Under Bias

–55 to +125

–65 to +135

°C

TSTG

Storage Temperature

–55 to +125

–65 to +150

°C

PT

Power Dissipation

1.0

1.0

W

IOUT

DC Output Current

50

50

mA

T

Maximum Junction Temperature (2)

125

145

°C

j

 

 

 

 

 

 

 

 

 

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.Appropriate thermal calculations should be performed in all cases and specifically for

those where the chosen package has a large thermal resistance (e.g., TSOP). The

calculation should be of the form: Tj = Ta + P * θja where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja values:

SOJ: 78 oC/W TSOP: 112 oC/W

2

Rev. 4.4 - 4/29/98

 

 

 

 

 

 

PDM41256

Recommended DC Operating Conditions

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

VCC

Supply Voltage

4.5

5.0

5.5

V

 

VSS

Supply Voltage

0

0

0

V

 

Commercial

Ambient Temperature

0

25

70

°C

 

 

 

 

 

 

 

 

Industrial

Ambient Temperature

–40

25

85

°C

 

 

 

 

 

 

 

DC Electrical Characteristics (VCC = 5.0V ± 10%)

 

 

 

 

 

 

PDM41256SA

PDM41256LA

Unit

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

 

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

ILI

Input Leakage Current

VCC = MAX., VIN = Vss to VCC

Com’l/

–5

5

–1

1

A

 

 

 

 

 

Ind.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ILO

Output Leakage Current

VCC= MAX.,

Com’l/

–5

5

–1

1

A

 

 

 

CE

= VIH, VOUT = Vss to VCC

Ind.

 

 

 

 

 

VIL

Input Low Voltage

 

 

 

 

–0.5(1)

0.8

–0.5(1)

0.8

V

VIH

Input High Voltage

 

 

 

 

2.2

6.0

2.2

6.0

V

VOL

Output Low Voltage

IOL=8 mA, VCC = Min.

 

0.4

0.4

V

 

 

 

IOL = 10 mA, VCC = Min.

 

0.5

0.5

 

VOH

Output High Voltage

IOH = –4 mA, VCC = Min.

 

2.4

2.4

V

NOTE: 1. VIL(min) = –3.0V for pulse width less than 20 ns.

Power Supply Characteristics

 

 

 

 

 

-7

-8

 

-10

 

-12

 

 

-15

 

Symbol

 

Parameter

Power

 

 

 

 

 

 

 

 

 

 

 

 

Com’l.

Com’l.

Ind.

Com’l.

 

Ind.

Com’l.

Ind.

Com’l.

Ind.

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

 

Operating Current

SA

210

200

210

190

 

200

170

 

180

150

 

160

mA

 

 

CE

= VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

LA

190

180

190

170

 

180

150

 

160

130

 

140

mA

 

 

VCC = Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

 

Standby Current

SA

90

80

80

70

 

70

60

 

60

50

 

50

mA

 

 

CE

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

LA

90

80

80

70

 

70

60

 

60

50

 

50

mA

 

 

VCC = Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

 

Full Standby Current

SA

20

20

20

20

 

20

20

 

20

20

 

20

mA

 

 

CE

VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0

LA

5

5

5

5

 

5

5

 

5

5

 

5

mA

 

 

VCC = Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN VCC – 0.2V or 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SHADED AREA = PRELIMINARY DATA

NOTE:All values are maximum guaranteed values.

1

2

3

4

5

6

7

8

9

10

11

12

Rev. 4.4 - 4/29/98

3

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