PARADIGM PDM31256SA12SOATY, PDM31256SA12SOI, PDM31256SA12SOITR, PDM31256SA12SOITY, PDM31256SA12SOTR Datasheet

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PARADIGM PDM31256SA12SOATY, PDM31256SA12SOI, PDM31256SA12SOITR, PDM31256SA12SOITY, PDM31256SA12SOTR Datasheet

PDM31256

Features

High-speed access times

Com’l: 10, 12, 15 and 20ns

Ind’l: 12, 15 and 20ns

Low power operation (typical)

-PDM31256SA Active: 200 mW Standby: 15mW

Single +3.3V (±0.3V) power supply

TTL-compatible inputs and outputs

Packages

Plastic SOJ (300 mil) - SO

Plastic TSOP (I) - T

3.3V 256K Static RAM

32K x 8-Bit

Description

The PDM31256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.

The PDM31256 operates from a single +3.3V power supply and all the inputs and outputs are fully TTLcompatible.

The PDM31256 is available in a 28-pin 300-mil plastic SOJ and a 28-pin plastic TSOP (I).

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Functional Block Diagram

 

A 0

Decoder

 

Memory

 

 

 

 

 

 

 

 

 

 

 

Addresses

 

Matrix

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A14

 

 

 

 

 

I/O0

 

 

 

• •

 

Input

 

Column I/O

 

 

 

 

 

 

 

 

Data

 

 

 

 

 

 

Control

 

 

 

 

 

 

 

 

 

 

 

 

I/O7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

Control

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

7

8

9

10

11

12

Rev. 3.3 - 4/29/98

1

PDM31256

Pin Configurations

SOJ

Pin Description

 

 

 

 

 

TSOP

 

 

A14

1

28

Vcc

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A10

A12

2

27

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

22

21

 

 

 

A13

A14-A0

Address Inputs

A11

 

23

20

CE

A7

3

26

 

 

A9

 

24

19

I/O7

A6

4

25

 

A8

 

 

 

 

 

 

A8

 

25

18

I/O6

 

I/O7-I/O0

Data Inputs/Outputs

 

A13

 

26

17

I/O5

A5

5

24

 

A9

 

 

 

 

 

WE

 

27

16

I/O4

A4

6

23

A11

OE

Output Enable Input

Vcc

 

28

15

I/O3

 

 

 

 

 

A14

 

1

14

Vss

A3

7

22

 

OE

 

 

WE

Write Enable Input

 

 

A12

 

2

13

I/O2

 

 

 

 

 

 

 

 

 

 

 

 

A7

 

3

12

I/O1

A2

8

21

A10

 

CE

Chip Enable Input

 

 

 

A6

 

4

11

I/O0

A1

9

20

 

CE

 

 

 

 

 

 

 

 

 

 

 

VCC

Power (+3.3V)

 

A5

 

5

10

A0

A0

10

19

I/O7

 

 

 

A4

 

6

9

A1

 

VSS

Ground

 

 

 

 

18

 

 

 

 

 

A3

 

7

8

A2

I/O0

11

I/O6

 

 

 

 

 

 

 

 

 

 

 

I/O1

12

17

I/O5

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O2

13

16

I/O4

 

 

 

 

 

 

 

 

 

 

 

 

 

Vss

14

15

I/O3

 

 

 

 

 

Truth Table

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

WE

 

 

CE

 

I/O

MODE

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

H

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

L

 

DOUT

Read

 

X

 

 

L

 

 

L

 

DIN

Write

 

H

 

 

H

 

 

L

 

Hi-Z

Output Disable

 

 

 

 

 

 

 

 

 

 

 

NOTE: 1. H = VIH, L = VIL, X = DON’T CARE

Absolute Maximum Ratings (1)

Symbol

Rating

Com’l.

Ind.

Unit

 

 

 

 

 

VTERM

Terminal Voltage with Respect to Vss

–0.5 to +4.6

–0.5 to +4.6

V

TBIAS

Temperature Under Bias

–55 to +125

–65 to +135

°C

TSTG

Storage Temperature

–55 to +125

–65 to +150

°C

PT

Power Dissipation

1.0

1.0

W

IOUT

DC Output Current

50

50

mA

T

Maximum Junction Temperature (2)

125

145

°C

j

 

 

 

 

 

 

 

 

 

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.Appropriate thermal calculations should be performed in all cases and specifically for

those where the chosen package has a large thermal resistance (e.g., TSOP). The

calculation should be of the form: Tj = Ta + P * θja where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja values:

SOJ: 78 oC/W TSOP: 112 oC/W

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Rev. 3.3 - 4/29/98

PDM31256

Recommended DC Operating Conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

VCC

Supply Voltage

3.0

3.3

3.6

V

VSS

Supply Voltage

0

0

0

V

Commercial

Ambient Temperature

0

25

70

°C

 

 

 

 

 

 

Industrial

Ambient Temperature

–40

25

85

°C

 

 

 

 

 

 

DC Electrical Characteristics (VCC = 3.3V ± 0.3V)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

 

 

 

 

 

 

ILI

Input Leakage Current

VCC = MAX., VIN

–5

5

A

 

 

 

= Vss to VCC

 

 

 

ILO

Output Leakage Current

VCC= MAX.,

–5

5

A

 

 

 

CE

= VIH, VOUT =

 

 

 

 

 

 

Vss to VCC

 

 

 

VIL

Input Low Voltage

 

 

 

–0.3(1)

0.8

V

VIH

Input High Voltage

 

 

 

2.2

Vcc+0.3

V

VOL

Output Low Voltage

IOL= 8 mA

0.4

V

 

 

 

VCC = Min.

 

 

 

VOH

Output High Voltage

IOH = –4 mA,

2.4

V

 

 

 

VCC = Min.

 

 

 

NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns.

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Power Supply Characteristics

 

 

 

 

 

 

-10

-12

 

-15

 

-17

 

-20

 

 

Symbol

 

Parameter

Com’l.

Com’l

Ind.

Com’l

Ind.

Com’l

Ind.

Com’l

 

Ind.

Unit

ICC

 

Operating Current

140

130

 

130

120

 

120

120

 

120

110

 

110

mA

 

 

CE

 

= VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

 

Standby Current

45

40

 

35

35

 

35

35

 

35

30

 

30

mA

 

 

CE

 

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

 

Full Standby Current

10

10

 

15

10

 

15

10

 

15

10

 

15

mA

 

 

 

CE

VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN VCC – 0.2V or 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTES: All values are maximum guaranteed values.

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Rev. 3.3 - 4/29/98

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