PARADIGM PDM31096SA10SOTR, PDM31096SA10SOTY, PDM31096SA10TTR, PDM31096SA10TTY, PDM31096SA12SOATR Datasheet

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PARADIGM PDM31096SA10SOTR, PDM31096SA10SOTY, PDM31096SA10TTR, PDM31096SA10TTY, PDM31096SA12SOATR Datasheet

PRELIMINARY

PDM31096

4 Megabit 3.3V Static RAM

512K x 8-Bit

Features

Description

High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns

Low power operation

-PDM31096SA Active: 300 mA (Max) Standby: 25mW

Single +3.3V (±0.3V) power supply TTL-compatible inputs and outputs Packages

Plastic SOJ (400 mil) - SO Plastic TSOP (II) - T

The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is accomplished when the write enable (WE) and chip enable CE inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.

The PDM31096 operates from a single +3.3V power supply and all the inputs and outputs are fully TTLcompatible.

The PDM31096 is available in a 36-pin 400-mil plastic SOJ package and a 44-pin plastic TSOP (II) package.

Functional Block Diagram

1

2

3

4

5

6

7

 

A 0

Decoder

Memory

 

8

 

 

 

 

 

Addresses

 

Matrix

 

 

 

 

 

 

 

 

 

 

 

 

 

9

 

A18

 

 

 

 

 

 

 

 

• •

I/O0

 

 

 

 

Input

 

Column I/O

 

 

 

 

 

 

 

 

Data

 

 

 

 

10

 

Control

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O7

 

 

 

 

 

11

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

12

WE

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

Rev. 2.4 - 5/27/98

 

 

 

 

 

 

1

PRELIMINARY

PDM31096

Pin Configuration

TSOP (II)

 

NC

 

1

44

 

NC

 

 

 

 

NC

 

2

43

 

NC

 

 

 

 

A4

 

3

42

 

NC

 

 

 

 

A3

 

4

41

 

A5

 

 

 

 

A2

 

5

40

 

A6

 

 

 

 

A1

 

6

39

 

A7

 

 

 

 

A0

 

7

38

 

A8

 

 

 

 

 

 

 

 

 

37

 

 

 

 

 

CE

 

8

 

OE

I/OO

 

9

36

 

I/O7

 

 

I/O1

 

10

35

 

I/O6

 

 

Vcc

 

11

34

 

Vss

 

 

Vss

 

12

33

 

Vcc

 

 

I/O2

13

32

 

I/O5

 

I/O3

14

31

 

I/O4

 

 

 

 

 

 

 

 

 

 

WE

15

30

 

A9

A18

16

29

 

A10

A17

17

28

 

A11

A16

18

27

 

A12

A15

19

26

 

A13

A14

20

25

 

NC

 

NC

21

24

 

NC

 

NC

22

23

 

NC

 

 

 

 

 

 

 

 

 

 

 

 

SOJ

Pin Description

 

 

A4

1

36

NC

 

 

A3

2

35

A5

 

 

A2

3

34

A6

 

 

A1

4

33

A7

 

 

A0

5

32

A8

 

 

 

6

 

 

 

 

 

 

CE

31

OE

I/O0

7

30

I/O7

I/O1

8

29

I/O6

Vcc

9

28

Vss

Vss

10

27

Vcc

I/O2

11

26

I/O5

I/O3

12

25

I/O4

 

 

 

13

24

A9

 

WE

A18

14

23

A10

A17

15

22

A11

A16

16

21

A12

A15

17

20

A13

A14

18

19

NC

 

Name

Description

 

 

 

 

A18-A0

Address Inputs

 

 

 

 

I/O7-I/O0

Data Inputs/Outputs

 

 

 

 

 

 

 

 

 

 

 

Output Enable Input

 

OE

 

 

 

 

 

 

 

 

 

 

Write Enable Input

 

WE

 

 

 

 

 

 

 

Chip Enable Inputs

 

CE

 

 

 

 

NC

No Connect

 

 

 

 

VCC

Power (+3.3V)

 

VSS

Ground

Truth Table(1)

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

WE

 

CE

 

I/O

MODE

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

H

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

X

 

 

X

 

 

X

 

Hi-Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

L

 

DOUT

Read

 

X

 

 

L

 

 

L

 

DIN

Write

 

H

 

 

H

 

 

L

 

Hi-Z

Output Disable

 

 

 

 

 

 

 

 

 

 

 

NOTE: 1. H = VIH, L = VIL, X = DON’T CARE

Absolute Maximum Ratings (1)

Symbol

Rating

Com’l.

Ind.

Unit

 

 

 

 

 

VTERM

Terminal Voltage with Respect to VSS

–0.5 to +4.6

–0.5 to +4.6

V

TBIAS

Temperature Under Bias

–55 to +125

–65 to +135

°C

TSTG

Storage Temperature

–55 to +125

–65 to +150

°C

PT

Power Dissipation

1.0

1.0

W

IOUT

DC Output Current

50

50

mA

Tj

Maximum Junction Temperature (2)

125

145

°C

 

 

 

 

 

NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.Appropriate thermal calculations should be performed in all cases and specifically for

those where the chosen package has a large thermal resistance (e.g., TSOP). The cal-

culation should be of the form: Tj = Ta + P * θja where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja value:

SOJ: 59o C/W

TSOP : TBD

2

Rev. 2.4 - 5/27/98

 

 

 

 

 

 

 

 

 

 

 

 

PRELIMINARY

 

 

 

 

 

 

 

 

 

PDM31096

 

DC Electrical Characteristics (VCC = 3.3V ± 0.3V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

 

Test Conditions

 

 

 

 

 

Min.

Max.

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ILI

 

 

 

 

Input Leakage Current

 

 

VCC = Max., VIN = VSS to VCC

 

 

–5

5

 

 

 

A

 

 

 

 

ILO

 

 

 

 

Output Leakage Current

 

 

VCC = Max.,

 

 

 

 

 

–5

5

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOUT = VSS to VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

 

 

 

 

Input Low Voltage

 

 

 

 

 

 

 

 

 

–0.3(1)

0.8

 

 

 

 

V

 

 

 

 

VIH

 

 

 

 

Input High Voltage

 

 

 

 

 

 

 

 

 

 

2.2

Vcc+0.3

 

 

V

 

 

 

 

VOL

 

 

 

 

Output Low Voltage

 

IOL = 8 mA, VCC = Min.

 

 

 

0.4

 

 

 

V

 

 

 

 

VOH

 

 

 

 

Output High Voltage

 

 

IOH = –4 mA, VCC = Min.

 

 

 

2.4

 

 

V

 

 

 

NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Power Supply Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-8

 

-10

-12

 

-15

-20

 

 

 

 

 

 

 

Symbol

 

Parameter

 

Com’l.

Com’l.

Com’l

 

Ind.

Com’l

Ind.

Com’l

 

Ind.

 

Unit

 

 

 

ICC

 

Operating Current

 

230

 

215

200

 

220

160

200

120

 

160

 

mA

 

 

 

 

 

CE

 

= VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB

 

Standby Current

 

50

 

45

40

 

45

35

40

30

 

35

 

mA

 

 

 

 

 

CE

 

= VIH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fMAX = 1/tRC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB1

 

Full Standby Current

 

10

 

10

10

 

15

10

15

10

 

15

 

mA

 

 

 

 

 

 

CE

VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC

= Max.,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN VCC – 0.2V or 0.2V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTES: All values are maximum guaranteed values.

Capacitance(1) (T = +25°C, f = 1.0 MHz)

 

 

 

A

 

 

Symbol

Parameter

Max.

Unit

 

 

 

 

CIN

Input Capacitance

8

pF

COUT

Output Capacitance

8

pF

NOTE: 1. This parameter is determined by device characterization but is not production tested.

Rev. 2.4 - 5/27/98

3

1

2

3

4

5

6

7

8

9

10

11

12

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