PNA4S11M
1
PNA4S11M Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Photo IC
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power supply voltage V
CC
–
0.5 to +7 V
Power dissipation P
D
200 mW
Operating ambient temperature
T
opr
–20 to +60 ˚C
Storage temperature T
stg
–
30 to +70 ˚C
1: V
O
2: V
CC
3: GND
4: GND
Unit : mm
5.2
(2.6)
3.47
R1.7
12
34
7.6
(3.8)
400µs
400µs
Fig.2Fig.1
Main Characteristics (Ta = 25˚C V
CC
= 5V)
Parameter Symbol Conditions min typ max Unit
Operating supply voltage V
CC
4.7 5.0 5.3 V
Current consumption I
CC
No signal condition 1.8 2.4 3.0 mA
Maximum reception distance
L
max
*1
7.0 m
Low-level output voltage V
OL
*2
L≤7.0m, 10L=400µA 0.35 0.5 V
High-level output voltage V
OH
No signal condition 4.8 5.0 V
CC
V
Low-level pulse width T
WL
*1
L=7.0m, 16Pulse 200 400 600 µs
High-level pulse width T
WH
*1
L=7.0m, 16Pulse 200 400 600 µs
PNA4S11M 36.7
Carrier frequency
PNA4S12M
f
0
38.0
kHz
PNA4S13M 40.0
PNA4S14M 56.9
*1
Fig.1 burst wave, L=L
max
, 16 pulses
Carrier wave : f
o
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
*2
Fig.2 continuous wave, L≤L
max
Carrier wave : f
o
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