Panasonic PNA4S01M, PNA4S02M, PNA4S03M, PNA4S04M Datasheet

0 (0)
Panasonic PNA4S01M, PNA4S02M, PNA4S03M, PNA4S04M Datasheet

Photo IC

PNA4S01M Series

(PNA4S01M/4S02M/4S03M/4S04M)

Bipolar Integrated Circuit with Photodetection Function

For infrared remote control systems

Features

Surface-mouting type for reflow soldering

Metal shieldless

Space saved by miniaturization

Ready for automatic mounting

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

 

 

 

 

Power supply voltage

VCC

–0.5 to +7

V

Power dissipation

PD

200

mW

Operating ambient temperature

Topr

–20 to +60

˚C

Storage temperature

Tstg

–30 to +70

˚C

Unit : mm

5.2

 

(2.6)

3.47

1

 

2

 

7.6 (3.8)

R1.7

3

4

1: VO

2: VCC 3: GND

4: GND

Main Characteristics (Ta = 25˚C VCC = 5V)

Parameter

 

Symbol

Conditions

 

min

typ

max

Unit

 

 

 

 

 

 

 

 

 

 

Operating supply voltage

 

VCC

 

 

4.7

5.0

5.3

V

Current consumption

 

ICC

No signal condition

 

1.8

2.4

3.0

mA

Maximum reception distance

*1

 

 

5.0

 

 

m

 

Lmax

 

 

 

 

Low-level output voltage

*2

L≤5.0m, 10L=400μA

 

 

0.35

0.5

V

 

VOL

 

 

High-level output voltage

 

VOH

No signal condition

 

4.8

5.0

VCC

V

Low-level pulse width

*1

L=5.0m, 16Pulse

 

200

400

600

μs

 

TWL

 

High-level pulse width

*1

L=5.0m, 16Pulse

 

200

400

600

μs

 

TWH

 

 

PNA4S01M

 

 

 

 

 

36.7

 

 

 

 

 

 

 

 

 

 

 

 

Carrier frequency

PNA4S02M

 

f0

 

 

 

38.0

 

kHz

 

 

 

 

 

 

 

PNA4S03M

 

 

 

 

40.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PNA4S04M

 

 

 

 

 

56.9

 

 

 

 

 

 

 

 

 

 

 

 

*1 Fig.1 burst wave, L=Lmax, 16 pulses

 

*2 Fig.2 continuous wave, L≤Lmax

 

 

 

Carrier wave : fo

 

Carrier wave : fo

 

 

 

400 s 400 s

Fig.1

Fig.2

1

Loading...
+ 2 hidden pages