Photo IC
PNA4S01M Series
(PNA4S01M/4S02M/4S03M/4S04M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mouting type for reflow soldering
Metal shieldless
Space saved by miniaturization
Ready for automatic mounting
Absolute Maximum Ratings (Ta = 25˚C)
Parameter |
Symbol |
Ratings |
Unit |
|
|
|
|
Power supply voltage |
VCC |
–0.5 to +7 |
V |
Power dissipation |
PD |
200 |
mW |
Operating ambient temperature |
Topr |
–20 to +60 |
˚C |
Storage temperature |
Tstg |
–30 to +70 |
˚C |
Unit : mm
5.2 |
|
(2.6) |
3.47 |
1 |
|
2 |
|
7.6 (3.8)
R1.7
3 |
4 |
1: VO
2: VCC 3: GND
4: GND
Main Characteristics (Ta = 25˚C VCC = 5V)
Parameter |
|
Symbol |
Conditions |
|
min |
typ |
max |
Unit |
|
|
|
|
|
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|
|
Operating supply voltage |
|
VCC |
|
|
4.7 |
5.0 |
5.3 |
V |
|
Current consumption |
|
ICC |
No signal condition |
|
1.8 |
2.4 |
3.0 |
mA |
|
Maximum reception distance |
*1 |
|
|
5.0 |
|
|
m |
||
|
Lmax |
|
|
|
|
||||
Low-level output voltage |
*2 |
L≤5.0m, 10L=400μA |
|
|
0.35 |
0.5 |
V |
||
|
VOL |
|
|
||||||
High-level output voltage |
|
VOH |
No signal condition |
|
4.8 |
5.0 |
VCC |
V |
|
Low-level pulse width |
*1 |
L=5.0m, 16Pulse |
|
200 |
400 |
600 |
μs |
||
|
TWL |
|
|||||||
High-level pulse width |
*1 |
L=5.0m, 16Pulse |
|
200 |
400 |
600 |
μs |
||
|
TWH |
|
|||||||
|
PNA4S01M |
|
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|
|
36.7 |
|
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Carrier frequency |
PNA4S02M |
|
f0 |
|
|
|
38.0 |
|
kHz |
|
|
|
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|||
PNA4S03M |
|
|
|
|
40.0 |
|
|||
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PNA4S04M |
|
|
|
|
|
56.9 |
|
|
|
|
|
|
|
|
|
|
|
|
*1 Fig.1 burst wave, L=Lmax, 16 pulses |
|
*2 Fig.2 continuous wave, L≤Lmax |
|
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|||||
|
Carrier wave : fo |
|
Carrier wave : fo |
|
|
|
400 s 400 s
Fig.1 |
Fig.2 |
1