Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : PO = 6 mW (typ.) 
Fast response : tr, tf = 1 μs (typ.)
Infrared light emission close to monochromatic light : λP =950 nm (typ.)
Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L)
Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter |
Symbol |
Ratings |
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Unit |
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Power dissipation |
PD |
150 |
|
mW |
Forward current (DC) |
IF |
100 |
|
mA |
Pulse forward current |
* |
2 |
|
A |
IFP |
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Reverse voltage (DC) |
VR |
5 |
|
V |
Operating ambient temperature |
Topr |
–25 to +100 |
|
˚C |
Storage temperature |
Tstg |
–30 to +100 |
|
˚C |
* f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
LN51F |
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ø4.6±0.15 |
Unit : mm |
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Glass window |
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4.5±0.2 |
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min. |
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2-ø0.45±0.05 |
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12.7 |
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2.54±0.25 |
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1 |
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. |
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0 |
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± |
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0 |
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. |
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2 |
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.15 |
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± |
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0 |
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45 |
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3˚ |
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± |
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.0 |
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1 |
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2 |
1 |
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ø5.75 max. |
1: Cathode |
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2: Anode |
LN51L |
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ø4.6±0.15 |
Unit : mm |
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Glass lens |
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6.3±0.3 |
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min. |
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2-ø0.45±0.05 |
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12.7 |
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2.54±0.25 |
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1 |
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. |
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0 |
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± |
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0 |
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. |
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2 |
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.15 |
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± |
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0 |
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45 |
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3˚ |
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± |
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.0 |
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1 |
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2 |
1 |
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ø5.75 max. |
1: Cathode |
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2: Anode |
Parameter |
Symbol |
Conditions |
min |
typ |
max |
Unit |
|
Radiant power |
PO |
IF = 100mA |
3 |
6 |
|
mW |
|
Peak emission wavelength |
λP |
IF = 100mA |
|
950 |
|
nm |
|
Spectral half band width |
Δλ |
IF = 100mA |
|
50 |
|
nm |
|
Forward voltage (DC) |
VF |
IF = 100mA |
|
1.25 |
1.5 |
V |
|
Reverse current (DC) |
IR |
VR = 5V |
|
0.005 |
10 |
μA |
|
Capacitance between pins |
Ct |
VR = 0V, f = 1MHz |
|
50 |
|
pF |
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Rise time |
tr |
IFP = 100mA |
|
1 |
|
μs |
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Fall time |
tf |
|
1 |
|
μs |
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Half-power angle |
LN51F |
θ |
The angle in which radiant intencity is 50% |
|
32 |
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deg. |
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LN51L |
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8 |
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deg. |
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