MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP29B/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications. Compact TO±220 AB package.
MAXIMUM RATINGS
NPN
TIP29B
TIP29C
PNP
TIP30B
TIP30C
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TIP29B |
TIP29C |
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Rating |
Symbol |
TIP30B |
TIP30C |
Unit |
Collector±Emitter Voltage |
VCEO |
80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
Collector Current Ð Continuous |
IC |
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1.0 |
Adc |
Peak |
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3.0 |
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Base Current |
IB |
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0.4 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
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30 |
Watts |
Derate above 25_C |
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0.24 |
W/_C |
Total Power Dissipation @ TA = 25_C |
PD |
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2.0 |
Watts |
Derate above 25_C |
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0.016 |
W/_C |
Unclamped Inductive Load Energy |
E |
32 |
mJ |
(See Note 3) |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
4.167 |
_C/W |
1 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
80 ± 100 VOLTS
30 WATTS
CASE 221A±06
TO±220AB
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
TIP29B, TIP30B |
VCEO(sus) |
80 |
Ð |
Vdc |
(IC = 30 mAdc, IB = 0) |
TIP29C, TIP30C |
|
100 |
Ð |
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Collector Cutoff Current (VCE = 60 Vdc, IB = 0) |
ICEO |
Ð |
0.3 |
mAdc |
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Collector Cutoff Current |
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ICES |
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μAdc |
(VCE = 80 Vdc, VEB = 0) |
TIP29B, TIP30B |
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Ð |
200 |
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(VCE = 100 Vdc, VEB = 0) |
TIP29C, TIP30C |
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Ð |
200 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
1.0 |
mAdc |
ON CHARACTERISTICS (1) |
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DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) |
hFE |
40 |
Ð |
Ð |
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DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) |
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15 |
75 |
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Collector±Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) |
VCE(sat) |
Ð |
0.7 |
Vdc |
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Base±Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) |
VBE(on) |
Ð |
1.3 |
Vdc |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (2) |
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fT |
3.0 |
Ð |
MHz |
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
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Small±Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
hfe |
20 |
Ð |
Ð |
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(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
(2)fT = hfe•ftest.
(3)This rating based on testing with LC = 20 mH, RBE = 100 Ω, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.
REV 1
Motorola, Inc. 1995
TIP29B |
TIP29C |
TIP30B |
TIP30C |
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500 |
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300 |
TJ = 150°C |
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VCE = 2.0 V |
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GAIN |
100 |
25°C |
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DC CURRENT |
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70 |
± 55°C |
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50 |
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30 |
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, |
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FE |
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h |
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10 |
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7.0 |
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5.0 |
0.05 0.07 |
0.1 |
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0.5 |
0.7 |
1.0 |
3.0 |
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0.03 |
0.3 |
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IC, COLLECTOR CURRENT (AMP) |
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3.0 |
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IB1 = IB2 |
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2.0 |
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ts′ |
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IC/IB = 10 |
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1.0 |
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ts′= ts ± 1/8 tf |
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TJ = 25°C |
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0.7 |
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tf @ VCC = 30 V |
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μs) |
0.5 |
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( |
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TIME |
0.3 |
tf @ VCC = 10 V |
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0.2 |
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t, |
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0.1 |
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0.07 |
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0.05 |
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0.03 |
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0.03 |
0.05 |
0.07 0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 1. DC Current Gain |
Figure 2. Turn±Off Time |
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TURN±ON PULSE |
VCC |
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APPROX |
RC |
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+11 V |
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Vin 0 |
Vin |
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SCOPE |
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VEB(off) |
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RB |
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t1 |
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APPROX |
t3 |
Cjd << Ceb |
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± 4.0 V |
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+11 V |
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t1 ≤ 7.0 ns |
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100 < t2 < 500 ms |
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Vin |
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t3 < 15 ns |
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DUTY CYCLE ≈ 2.0% |
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t2 |
APPROX ±9.0 V |
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TURN±OFF PULSE |
RB and RC VARIED TO OBTAIN |
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DESIRED CURRENT LEVELS. |
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Figure 3. Switching Time Equivalent Circuit
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10 |
TJ = 150°C |
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(AMPS) |
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3.0 |
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1 ms |
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CURRENT |
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0.1 |
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dc |
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,COLLECTOR |
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SECOND BREAKDOWN LIMITED |
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5 ms |
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THERMALLY LIMITED @ TC = 25°C |
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BONDING WIRE LIMITED |
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CURVES APPLY BELOW |
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C |
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I |
RATED VCEO |
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TIP29B, 30B |
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0.1 |
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TIP29C, 30C |
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4.0 |
10 |
20 |
40 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE, (VOLTS)
Figure 5. Active Region Safe Operating Area
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2.0 |
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1.0 |
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IC/IB = 10 |
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TJ = 25°C |
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0.7 |
tr @ VCC = 30 V |
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0.5 |
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( μs) |
0.3 |
tr @ VCC = 10 V |
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t, TIME |
0.1 |
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td @ VEB(off) = 2.0 V |
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0.07 |
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0.05 |
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0.03 |
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0.02 |
0.05 0.07 |
0.1 |
0.3 |
0.5 |
0.7 |
1.0 |
3.0 |
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0.03 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 4. Turn±On Time
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the limitations imposed by second breakdown.
2 |
Motorola Bipolar Power Transistor Device Data |
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