MOTOROLA TIP146, TIP140, TIP147, TIP142, TIP145 Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TIP140/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general±purpose amplifier and low frequency switching applications.

High DC Current Gain Ð Min h FE = 1000 @ IC = 5 A, VCE = 4 V

Collector±Emitter Sustaining Voltage Ð @ 30 mA

VCEO(sus) = 60 Vdc (Min) Ð TIP140, TIP145 80 Vdc (Min) Ð TIP141, TIP146

100 Vdc (Min) Ð TIP142, TIP147

Monolithic Construction with Built±In Base±Emitter Shunt Resistor

MAXIMUM RATINGS

 

 

TIP140

 

TIP141

 

TIP142

 

Rating

Symbol

TIP145

 

TIP146

 

TIP147

Unit

 

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

 

80

 

100

Vdc

Collector±Base Voltage

VCB

60

 

80

 

100

Vdc

Emitter±Base Voltage

VEB

 

5.0

 

 

Vdc

Collector Current Ð Continuous

IC

 

10

 

 

Adc

Peak (1)

 

 

15

 

 

 

 

 

 

 

 

 

 

Base Current Ð Continuous

IB

 

0.5

 

 

Adc

Total Device Dissipation

PD

 

125

 

 

Watts

@ TC = 25_C

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

 

± 65 to + 150

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.0

_C/W

Thermal Resistance, Case to Ambient

RθJA

35.7

_C/W

(1) 5 ms, v 10% Duty Cycle.

DARLINGTON SCHEMATICS

NPN

TIP140

TIP141*

TIP142*

PNP

TIP145

TIP146*

TIP147*

*Motorola Preferred Device

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON POWER TRANSISTORS

60 ± 100 VOLTS

125 WATTS

CASE 340D±02

NPN

COLLECTOR

TIP140

 

TIP141

 

TIP142

 

BASE

 

8.0 k

40

PNP

COLLECTOR

TIP145

 

TIP146

 

TIP147

 

BASE

 

8.0 k

40

EMITTER

EMITTER

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1996

1

Motorola Bipolar Power Transistor Device Data

MOTOROLA TIP146, TIP140, TIP147, TIP142, TIP145 Datasheet

TIP140

TIP141

TIP142

TIP145

TIP146

TIP147

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

 

 

VCEO(sus)

 

 

 

Vdc

 

(IC = 30 mA, IB = 0)

 

TIP140, TIP145

 

60

Ð

Ð

 

 

 

 

 

 

 

TIP141, TIP146

 

80

Ð

Ð

 

 

 

 

 

 

 

TIP142, TIP147

 

100

Ð

Ð

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

ICEO

 

 

 

mA

 

(VCE = 30 Vdc, IB = 0)

 

TIP140, TIP145

 

Ð

Ð

2.0

 

 

(VCE = 40 Vdc, IB = 0)

 

TIP141, TIP146

 

Ð

Ð

2.0

 

 

(VCE = 50 Vdc, IB = 0)

 

TIP142, TIP147

 

Ð

Ð

2.0

 

 

Collector Cutoff Current

 

 

 

ICBO

 

 

 

mA

 

 

 

 

 

 

 

 

(VCB = 60 V, IE = 0)

 

TIP140, TIP145

 

Ð

Ð

1.0

 

 

(VCB = 80 V, IE = 0)

 

TIP141, TIP146

 

Ð

Ð

1.0

 

 

(VCB = 100 V, IE = 0)

 

TIP142, TIP147

 

Ð

Ð

1.0

 

 

Emitter Cutoff Current (VBE = 5.0 V)

 

 

 

IEBO

Ð

Ð

2 0

mA

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

 

hFE

 

 

 

Ð

 

(IC = 5.0 A, VCE = 4.0 V)

 

 

 

 

1000

Ð

Ð

 

 

(IC = 10 A, VCE = 4.0 V)

 

 

 

 

500

Ð

Ð

 

 

Collector±Emitter Saturation Voltage

 

 

 

VCE(sat)

 

 

 

Vdc

 

(IC = 5.0 A, IB = 10 mA)

 

 

 

 

Ð

Ð

2.0

 

 

(IC = 10 A, IB = 40 mA)

 

 

 

 

Ð

Ð

3.0

 

 

Base±Emitter Saturation Voltage

 

 

 

VBE(sat)

Ð

Ð

3.5

Vdc

 

(IC = 10 A, IB = 40 mA)

 

 

 

 

 

 

 

 

 

Base±Emitter On Voltage

 

 

 

VBE(on)

Ð

Ð

3.0

Vdc

 

(IC = 10 A, VCE = 4.0 Vdc)

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resistive Load (See Figure 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

 

 

 

 

td

Ð

0.15

Ð

μs

 

Rise Time

 

 

(VCC = 30 V, IC = 5.0 A,

 

 

t

Ð

0.55

Ð

μs

 

 

 

 

IB = 20 mA, Duty Cycle v 2.0%,

 

r

 

 

 

 

 

Storage Time

 

 

ts

Ð

2.5

Ð

μs

 

 

IB1 = IB2, RC & RB Varied, TJ = 25_C)

 

 

Fall Time

 

 

 

 

 

 

tf

Ð

2.5

Ð

μs

 

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

 

 

± 30 V

 

 

D1, MUST BE FAST RECOVERY TYPE, eg:

 

 

 

 

1N5825 USED ABOVE IB 100 mA

RC

 

 

MSD6100 USED BELOW IB 100 mA

SCOPE

 

 

TUT

 

 

 

 

 

 

 

 

V2

 

RB

 

 

approx

 

 

 

 

+12 V

 

 

 

 

0

51

D1

8.0 k

40

 

 

 

 

V1

 

 

 

 

 

 

 

+ 4.0 V

 

 

 

 

 

 

 

appox.

 

 

 

 

 

 

 

 

 

 

 

± 8.0 V

 

 

25

μ

s

for td and tr, D1 is disconnected

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tr, tf 10 ns

 

 

 

and V2 = 0

DUTY CYCLE = 1.0%

 

 

 

 

 

 

 

 

For NPN test circuit reverse diode and voltage polarities.

Figure 1. Switching Times Test Circuit

 

10

 

 

 

 

 

 

 

 

 

 

 

 

PNP

 

 

5.0

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

ts

 

 

 

 

 

 

μs)

2.0

 

 

tf

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

t, TIME

1.0

 

 

 

 

 

 

0.5

 

 

 

tr

 

 

 

 

 

 

 

 

 

 

 

 

 

td @ VBE(off) = 0

VCC = 30 V

 

 

0.2

 

 

 

 

IC/IB = 250

 

 

 

 

 

 

 

IB1 = IB2

 

 

0.1

 

 

 

 

TJ = 25°C

 

 

0.5

1.0

3.0

5.0

10

20

 

0.2

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

Figure 2. Switching Times

2

Motorola Bipolar Power Transistor Device Data

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