MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP120/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector±Emitter Sustaining Voltage Ð @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) Ð TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) Ð TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) Ð TIP122, TIP127
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built±In Base±Emitter Shunt Resistors
•TO±220AB Compact Package
*MAXIMUM RATINGS
NPN
TIP120* TIP121*
TIP122*
PNP
TIP125* TIP126* TIP127*
*Motorola Preferred Device
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TIP120, |
TIP121, |
TIP122, |
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Rating |
Symbol |
TIP125 |
TIP126 |
TIP127 |
Unit |
Collector±Emitter Voltage |
VCEO |
60 |
80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
Collector Current Ð Continuous |
IC |
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5.0 |
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Adc |
Peak |
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8.0 |
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Base Current |
IB |
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120 |
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mAdc |
Total Power Dissipation @ TC = 25_C |
PD |
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65 |
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Watts |
Derate above 25_C |
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0.52 |
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W/_C |
Total Power Dissipation @ TA = 25_C |
PD |
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2.0 |
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Watts |
Derate above 25_C |
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0.016 |
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W/_C |
Unclamped Inductive Load Energy (1) |
E |
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50 |
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mJ |
Operating and Storage Junction, |
TJ, Tstg |
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± 65 to +150 |
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_C |
Temperature Range |
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THERMAL CHARACTERISTICS
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.92 |
_C/W |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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62.5 |
_C/W |
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(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω. |
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TA |
TC |
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4.0 |
80 |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
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TC |
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2.0 |
40 |
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, POWER |
1.0 |
20 |
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TA |
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D |
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P |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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T, TEMPERATURE (°C) |
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DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60 ± 80 ± 100 VOLTS
65 WATTS
CASE 221A±06
TO±220AB
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
TIP120 |
TIP121 |
TIP122 |
TIP125 |
TIP126 |
TIP127 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0) |
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TIP120, TIP125 |
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60 |
Ð |
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TIP121, TIP126 |
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80 |
Ð |
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TIP122, TIP127 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 30 Vdc, IB = 0) |
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TIP120, TIP125 |
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Ð |
0.5 |
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(VCE = 40 Vdc, IB = 0) |
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TIP121, TIP126 |
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Ð |
0.5 |
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(VCE = 50 Vdc, IB = 0) |
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TIP122, TIP127 |
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Ð |
0.5 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 60 Vdc, IE = 0) |
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TIP120, TIP125 |
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Ð |
0.2 |
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(VCB = 80 Vdc, IE = 0) |
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TIP121, TIP126 |
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Ð |
0.2 |
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(VCB = 100 Vdc, IE = 0) |
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TIP122, TIP127 |
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Ð |
0.2 |
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Emitter Cutoff Current |
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IEBO |
Ð |
2.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.5 Adc, VCE = 3.0 Vdc) |
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1000 |
Ð |
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(IC = 3.0 Adc, VCE = 3.0 Vdc) |
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1000 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 3.0 Adc, IB = 12 mAdc) |
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Ð |
2.0 |
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(IC = 5.0 Adc, IB = 20 mAdc) |
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Ð |
4.0 |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.5 |
Vdc |
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(IC = 3.0 Adc, VCE = 3.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
4.0 |
Ð |
Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz |
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TIP125, TIP126, TIP127 |
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Ð |
300 |
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TIP120, TIP121, TIP122 |
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Ð |
200 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 120 |
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V1 |
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+ 4.0 V |
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approx |
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±12 V |
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μ |
s |
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25 |
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for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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For NPN test circuit reverse all polarities. |
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DUTY CYCLE = 1.0%
Figure 2. Switching Times Test Circuit
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5.0 |
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PNP |
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3.0 |
ts |
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NPN |
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2.0 |
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μs) |
1.0 |
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tf |
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0.7 |
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( |
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t, TIME |
0.5 |
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0.3 |
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tr |
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0.2 |
VCC = 30 V |
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IC/IB = 250 |
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0.1 |
IB1 = IB2 |
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0.07 |
TJ = 25°C |
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td @ VBE(off) = 0 |
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0.05 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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