ON Semiconductor TIP100, TIP101, TIP102, TIP105, TIP106 Service Manual

...
0 (0)
ON Semiconductor TIP100, TIP101, TIP102, TIP105, TIP106 Service Manual

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

TIP101, TIP102, TIP106 and TIP107 are Preferred Devices

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general-purpose amplifier and low-speed switching applications.

Features

High DC Current Gain -

hFE = 2500 (Typ) @ IC

= 4.0 Adc

Collector-Emitter Sustaining Voltage - @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) - TIP100, TIP105

=80 Vdc (Min) - TIP101, TIP106

=100 Vdc (Min) - TIP102, TIP107

Low Collector-Emitter Saturation Voltage -

VCE(sat) = 2.0 Vdc (Max) @ IC

=3.0 Adc

=2.5 Vdc (Max) @ IC = 8.0 Adc

Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Pb-Free Packages are Available*

http://onsemi.com

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 80 WATTS

MARKING

DIAGRAM

4

TO-220AB

TIP10xG

CASE 221A

AYWW

STYLE 1

 

1

2

3

TIP10x

= Device Code

x

= 0, 1, 2, 5, 6, or 7

A= Assembly Location

Y= Year

WW = Work Week

G= Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

November, 2007 - Rev. 12

 

TIP100/D

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

MAXIMUM RATINGS

 

 

TIP100,

TIP101,

 

TIP102,

 

 

Rating

Symbol

TIP105

TIP106

 

TIP107

Unit

 

 

 

 

 

 

 

 

 

Collector - Emitter Voltage

VCEO

60

80

 

100

Vdc

 

Collector - Base Voltage

VCB

60

80

 

100

Vdc

 

Emitter - Base Voltage

VEB

 

5.0

 

 

Vdc

 

Collector Current - Continuous

IC

 

8.0

 

 

 

 

- Peak

 

 

15

 

 

Adc

 

 

 

 

 

 

 

 

 

Base Current

IB

 

1.0

 

 

Adc

 

Total Power Dissipation @ TC = 25°C

PD

 

80

 

 

W

 

Derate above 25°C

 

 

0.64

 

 

W/°C

 

 

 

 

 

 

 

 

 

Unclamped Inductive Load Energy (1)

E

 

30

 

 

mJ

 

 

 

 

 

 

 

 

 

Total Power Dissipation @ TA = 25°C

PD

 

2.0

 

 

W

 

Derate above 25°C

 

 

0.016

 

 

W/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

 

–65 to +150

 

°C

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Max

 

Unit

 

 

 

 

 

 

 

°C/W

 

Thermal Resistance, Junction-to-Case

RqJC

 

1.56

 

 

 

Thermal Resistance, Junction-to-Ambient

RqJA

 

62.5

 

 

°C/W

 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ORDERING INFORMATION

Device

Package

Shipping

 

 

 

TIP100

TO-220

50 Units / Rail

 

 

 

TIP100G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

TIP101

TO-220

50 Units / Rail

 

 

 

TIP101G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

TIP102

TO-220

50 Units / Rail

 

 

 

TIP102G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

TIP105

TO-220

50 Units / Rail

 

 

 

TIP105G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

TIP106

TO-220

50 Units / Rail

 

 

 

TIP106G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

TIP107

TO-220

50 Units / Rail

 

 

 

TIP107G

TO-220

50 Units / Rail

 

(Pb-Free)

 

 

 

 

http://onsemi.com

2

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter Sustaining Voltage (1)

 

VCEO(sus)

 

 

Vdc

 

(IC = 30 mAdc, IB = 0)

TIP100, TIP105

 

60

-

 

 

 

TIP101, TIP106

 

80

-

 

 

 

TIP102, TIP107

 

100

-

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICEO

 

 

mAdc

 

(VCE = 30 Vdc, IB = 0)

TIP100, TIP105

 

-

50

 

 

(VCE = 40 Vdc, IB = 0)

TIP101, TIP106

 

-

50

 

 

(VCE = 50 Vdc, IB = 0)

TIP102, TIP107

 

-

50

 

 

Collector Cutoff Current

 

ICBO

 

 

mAdc

 

(VCB = 60 Vdc, IE = 0)

TIP100, TIP105

 

-

50

 

 

(VCB = 80 Vdc, IE = 0)

TIP101, TIP106

 

-

50

 

 

(VCB = 100 Vdc, IE = 0)

TIP102, TIP107

 

-

50

 

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

IEBO

-

8.0

mAdc

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

-

 

(IC = 3.0 Adc, VCE = 4.0 Vdc)

 

 

1000

20,000

 

 

(IC = 8.0 Adc, VCE = 4.0 Vdc)

 

 

200

-

 

 

Collector-Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

 

(IC = 3.0 Adc, IB = 6.0 mAdc)

 

 

-

2.0

 

 

(IC = 8.0 Adc, IB = 80 mAdc)

 

 

-

2.5

 

 

Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

 

VBE(on)

-

2.8

Vdc

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

-

-

 

Output Capacitance

 

Cob

 

 

pF

 

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP105, TIP106, TIP107

 

-

300

 

 

 

TIP100, TIP101, TIP102

 

-

200

 

 

 

 

 

 

 

 

 

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

 

TA

TC

 

 

 

 

 

 

 

 

 

4.0

80

 

 

 

 

 

 

 

 

(WATTS)

3.0

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

2.0

40

 

 

 

 

TC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, POWER

1.0

20

 

 

 

 

TA

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

0

0

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

http://onsemi.com

3

Loading...
+ 4 hidden pages