NTMFS4747N
NTP10N40, NTB10N40
Preferred Device
Advance Information
Power MOSFET
10 Amps, 400 Volts
N±Channel TO±220 and D2PAK
Designed for high voltage, high speed switching applications in |
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power supplies, converters, power motor controls and bridge circuits. |
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Features
•Higher Current Rating
•Lower RDS(on)
•Lower Capacitances
•Lower Total Gate Charge
•Tighter VSD Specifications
•Avalanche Energy Specified
Typical Applications
•Switch Mode Power Supplies
•PWM Motor Controls
•Converters
•Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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Drain±Source Voltage |
VDSS |
400 |
Vdc |
Drain±Gate Voltage (RGS = 1.0 MW) |
VDGR |
400 |
Vdc |
Gate±Source Voltage |
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Vdc |
± Continuous |
VGS |
20 |
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± Non±Repetitive (tp 10 ms) |
VGSM |
40 |
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Drain |
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Adc |
± Continuous |
ID |
10 |
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± Continuous @ 100°C |
ID |
7.5 |
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± Single Pulse (tp 10 ms) |
IDM |
35 |
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Total Power Dissipation |
PD |
142 |
Watts |
Derate above 25°C |
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1.14 |
W/°C |
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Operating and Storage Temperature |
TJ, Tstg |
±55 to 150 |
°C |
Range |
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Single Drain±to±Source Avalanche |
EAS |
500 |
mJ |
Energy ± Starting TJ = 25°C |
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(VDD = 100 Vdc, VGS = 10 Vdc, |
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IL = 10 A, L = 10 mH, RG = 25 W) |
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Thermal Resistance |
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°C/W |
± Junction±to±Case |
RqJC |
0.88 |
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± Junction±to±Ambient |
RqJA |
62.5 |
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± Junction±to±Ambient (Note 1.) |
RqJA |
50 |
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Maximum Lead Temperature for |
TL |
260 |
°C |
Soldering Purposes, 1/8″ from case |
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for 10 seconds |
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1.When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
10 AMPERES
400 VOLTS
RDS(on) = 500 mΩ
N±Channel
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D |
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G |
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4 |
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S |
4 |
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1 |
2 |
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3 |
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TO±220AB |
D2PAK |
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CASE 221A |
CASE 418B |
1 |
STYLE 5 |
STYLE 2 |
2 |
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3 |
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MARKING DIAGRAMS |
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AND PIN ASSIGNMENTS |
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Drain |
Drain |
NTB10N40
LLYWW
NTP10N40
LLYWW
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Drain |
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Gate |
Source |
Gate |
Source |
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Drain |
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NTx10N40 = Device Code |
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LL |
= Location Code |
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Y |
= Year |
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WW |
= Work Week |
ORDERING INFORMATION
Device |
Package |
Shipping |
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NTP10N40 |
TO±220AB |
50 Units/Rail |
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NTB10N40 |
D2PAK |
50 Units/Rail |
NTB10N40T4 |
D2PAK |
800/Tape & Reel |
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Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2000 |
1 |
Publication Order Number: |
November, 2000 ± Rev. 1 |
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NTP10N40/D |
NTP10N40, NTB10N40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Drain±to±Source Breakdown Voltage |
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V(BR)DSS |
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Vdc |
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(VGS = 0 Vdc, ID = 0.25 mAdc) |
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400 |
± |
± |
mV/°C |
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Temperature Coefficient (Positive) |
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± |
475 |
± |
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Zero Gate Voltage Collector Current |
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IDSS |
± |
± |
10 |
mAdc |
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(VDS = 400 Vdc, VGS = 0 Vdc) |
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(VDS = 400 Vdc, VGS = 0 Vdc, TJ =125°C) |
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± |
± |
100 |
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Gate±Body Leakage Current (VGS = ±20 Vdc, VDS = 0) |
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IGSS(f) |
± |
± |
100 |
nAdc |
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IGSS(r) |
± |
± |
100 |
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ON CHARACTERISTICS (Note 2.) |
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Gate Threshold Voltage |
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VGS(th) |
2.0 |
2.5 |
4.0 |
Vdc |
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ID = 0.25 mA, VDS = VGS |
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mV/°C |
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Temperature Coefficient (Negative) |
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± |
6.5 |
± |
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Static Drain±to±Source On±Resistance (VGS = 10 Vdc, ID = 5.0 Adc) |
RDS(on) |
± |
350 |
500 |
mOhm |
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Drain±to±Source On±Voltage |
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VDS(on) |
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Vdc |
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(VGS = 10 Vdc, ID = 10 Adc) |
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± |
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6.0 |
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(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C) |
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± |
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5.3 |
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Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) |
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gFS |
2.0 |
7.0 |
± |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VDS = 25 Vdc, VGS = 0 Vdc, |
Ciss |
± |
1440 |
2020 |
pF |
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Output Capacitance |
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Coss |
± |
360 |
500 |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Crss |
± |
15 |
30 |
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SWITCHING CHARACTERISTICS (Note 3.) |
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Turn±On Delay Time |
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td(on) |
± |
10 |
20 |
ns |
Rise Time |
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(VDD = 200 Vdc, ID = 10 Adc, |
t |
± |
20 |
40 |
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VGS = 10 Vdc, |
r |
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Turn±Off Delay Time |
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td(off) |
± |
33 |
70 |
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RG = 9.1 W) |
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Fall Time |
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tf |
± |
24 |
50 |
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Gate Charge |
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QT |
± |
24 |
30 |
nC |
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(V |
= 320 Vdc, I |
D |
= 10 Adc, |
Q1 |
± |
6.0 |
± |
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DS |
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VGS = 10 Vdc) |
Q2 |
± |
7.0 |
± |
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Q3 |
± |
12 |
± |
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SOURCE±DRAIN DIODE CHARACTERISTICS |
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Forward On±Voltage (Note 2.) |
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(IS = 10 Adc, VGS = 0 Vdc) |
VSD |
± |
0.9 |
1.1 |
Vdc |
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(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) |
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± |
0.8 |
± |
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Reverse Recovery Time |
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trr |
± |
305 |
± |
ns |
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(IS = 10 Adc, VGS = 0 Vdc, |
ta |
± |
155 |
± |
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tb |
± |
150 |
± |
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dIS/dt = 100 A/ms) |
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Reverse Recovery Stored |
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QRR |
± |
2.5 |
± |
mC |
Charge |
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INTERNAL PACKAGE INDUCTANCE |
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Internal Drain Inductance |
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LD |
± |
3.5 |
± |
nH |
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(Measured from contact screw on tab to center of die) |
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(Measured from the drain lead 0.25″ |
from package to center of die) |
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± |
4.5 |
± |
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Internal Source Inductance |
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LS |
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(Measured from the source lead 0.25″ from package to source bond pad) |
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± |
7.5 |
± |
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2.Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3.Switching characteristics are independent of operating junction temperature.
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2