ON Semiconductor NJW21193G, NJW21194G Service Manual

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 0

1 Publication Order Number:

NJW21193/D

NJW21193G (PNP)

NJW21194G (NPN)

Preferred Devices

Silicon Power Transistors

The NJW21193G and NJW21194G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

•Total Harmonic Distortion Characterized

•High DC Current Gain -

h

FE

= 20 Min @ I

C

= 8 Adc

•Excellent Gain Linearity

•High SOA: 2.25 A, 80 V, 1 Second

•These are Pb-Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V

CEO

250 Vdc

Collector-Base Voltage V

CBO

400 Vdc

Emitter-Base Voltage V

EBO

5.0 Vdc

Collector-Emitter Voltage - 1.5 V V

CEX

400 Vdc

Collector Current - Continuous

Collector Current - Peak (Note 1)

I

C

16

30

Adc

Base Current - Continuous I

B

5.0 Adc

Total Power Dissipation @ T

C

= 25°C

Derate Above 25°C

P

D

200

1.6

W

W/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

-āā 65 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction-to-Case

R

q

JC

0.625 °C/W

Thermal Resistance,

Junction-to-Ambient

R

q

JA

40 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

16 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

250 VOLTS, 200 WATTS

http://onsemi.com

Device Package Shipping

ORDERING INFORMATION

TO-3P

CASE 340AB

MARKING

DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

NJW21194G TO-3P

(Pb-Free)

30 Units/Rail

NJW21193G TO-3P

(Pb-Free)

30 Units/Rail

NJW2119xG

AYWW

x = 3 or 4

G = Pb-Free Package

A = Assembly Location

Y = Year

WW = Work Week

NJW21193G (PNP) NJW21194G (NPN)

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(I

C

= 100 mAdc, I

B

= 0)

V

CEO(sus)

250 - - Vdc

Collector Cutoff Current

(V

CE

= 200 Vdc, I

B

= 0)

I

CEO

- - 100

mAdc

Emitter Cutoff Current

(V

CE

= 5 Vdc, I

C

= 0)

I

EBO

- - 100

mAdc

Collector Cutoff Current

(V

CE

= 250 Vdc, V

BE(off)

= 1.5 Vdc)

I

CEX

- - 100

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

CE

= 50 Vdc, t = 1 s (non-repetitive)

(V

CE

= 80 Vdc, t = 1 s (non-repetitive)

I

S/b

4.0

2.25

-

-

-

-

Adc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 8 Adc, V

CE

= 5 Vdc)

(I

C

= 16 Adc, I

B

= 5 Adc)

h

FE

20

8

-

-

80

-

Base-Emitter On Voltage

(I

C

= 8 Adc, V

CE

= 5 Vdc)

V

BE(on)

- - 2.2 Vdc

Collector-Emitter Saturation Voltage

(I

C

= 8 Adc, I

B

= 0.8 Adc)

(I

C

= 16 Adc, I

B

= 3.2 Adc)

V

CE(sat)

-

-

-

-

1.4

4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

RMS

= 28.3 V, f = 1 kHz, P

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair h

FE

= 50 @ 5 A/5 V) h

FE

matched

T

HD

-

-

0.8

0.08

-

-

%

Current Gain Bandwidth Product

(I

C

= 1 Adc, V

CE

= 10 Vdc, f

test

= 1 MHz)

f

T

4 - - MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f

test

= 1 MHz)

C

ob

- - 500 pF

I

C

COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T

PNP NJW21193G

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

T

NPN NJW21194G

I

C

COLLECTOR CURRENT (AMPS)

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

1.0 100.1

8.0

7.0

6.0

5.0

4.0

3.0

2.0

0

1.0 100.1

1.0

V

CE

= 10 V

5 V

T

J

= 25°C

f

test

= 1 MHz

10 V

V

CE

= 5 V

T

J

= 25°C

f

test

= 1 MHz

NJW21193G (PNP) NJW21194G (NPN)

http://onsemi.com

3

Figure 3. DC Current Gain, V

CE

= 20 V Figure 4. DC Current Gain, V

CE

= 20 V

Figure 5. DC Current Gain, V

CE

= 5 V Figure 6. DC Current Gain, V

CE

= 5 V

h

FE

, DC CURRENT GAIN

I

C

COLLECTOR CURRENT (AMPS)

I

C

COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

h

FE

, DC CURRENT GAIN

I

C

COLLECTOR CURRENT (AMPS)

I

C

COLLECTOR CURRENT (AMPS)

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

I

C

, COLLECTOR CURRENT (A)

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

I

C

, COLLECTOR CURRENT (A)

PNP NJW21193G NPN NJW21194G

h

FE

, DC CURRENT GAIN

TYPICAL CHARACTERISTICS

PNP NJW21193G

PNP NJW21193G

NPN NJW21194G

NPN NJW21194G

1000

100

10

100101.00.1

1000

100

10

100101.00.1

1000

100

10

100101.00.1

1000

100

10

100101.00.1

30

0

25

20

15

10

5.0

0

5.0 10 15 20 25

35

0

30

25

20

15

5.0

0

5.0 10 15 20 25

10

V

CE

= 20 V

T

J

= 100°C

25°C

-25°C

V

CE

= 20 V

T

J

= 100°C

25°C

-25°C

T

J

= 100°C

25°C

-25°C

V

CE

= 5 V

T

J

= 100°C

25°C

-25°C

V

CE

= 20 V

T

J

= 25°C T

J

= 25°C

1.5 A

I

B

= 2 A

1 A

0.5 A

I

B

= 2 A

1.5 A

1 A

0.5 A