NJL3281D (NPN)
NJL1302D (PNP)
Complementary
ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
Features
•Thermally Matched Bias Diode
•Instant Thermal Bias Tracking
•Absolute Thermal Integrity
•High Safe Operating Area
•Pb−Free Packages are Available*
Benefits
•Eliminates Thermal Equilibrium Lag Time and Bias Trimming
•Superior Sound Quality Through Improved Dynamic Temperature Response
•Significantly Improved Bias Stability
•Simplified Assembly
♦Reduced Labor Costs
♦Reduced Component Count
•High Reliability
Applications
•High−End Consumer Audio Products
♦Home Amplifiers
♦Home Receivers
•Professional Audio Amplifiers
♦Theater and Stadium Sound Systems
♦Public Address Systems (PAs)
http://onsemi.com
BIPOLAR POWER
TRANSISTORS
15 AMP, 260 VOLT, 200 WATT
TO−264, 5 LEAD
CASE 340AA
STYLE 1
MARKING DIAGRAM |
SCHEMATIC |
NJLxxxxDG
AYYWW
Thermal Trak
NJLxxxxD |
= Device Code |
|
xxxx = 3281 or 1302 |
G |
= Pb−Free Package |
A |
= Assembly Location |
YY |
= Year |
WW |
= Work Week |
|
|
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Device |
Package |
Shipping |
|
|
|
NJL3281D |
TO−264 |
25 Units / Rail |
|
|
|
NJL3281DG |
TO−264 |
25 Units / Rail |
|
(Pb−Free) |
|
|
|
|
NJL1302D |
TO−264 |
25 Units / Rail |
|
|
|
NJL1302DG |
TO−264 |
25 Units / Rail |
|
(Pb−Free) |
|
|
|
|
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
June, 2006 − Rev. 2 |
|
NJL3281D/D |
NJL3281D (NPN) NJL1302D (PNP)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
|
Rating |
Symbol |
Value |
Unit |
|
|
|
|
|
Collector−Emitter Voltage |
VCEO |
260 |
Vdc |
|
Collector−Base Voltage |
|
VCBO |
260 |
Vdc |
Emitter−Base Voltage |
|
VEBO |
5 |
Vdc |
Collector−Emitter Voltage − 1.5 V |
VCEX |
260 |
Vdc |
|
Collector Current |
− Continuous |
IC |
15 |
Adc |
|
− Peak (Note 1) |
|
25 |
|
|
|
|
|
|
Base Current − Continuous |
IB |
1.5 |
Adc |
|
Total Power Dissipation @ TC = 25°C |
PD |
200 |
W |
|
Derate Above 25°C |
|
|
1.43 |
W/°C |
|
|
|
|
|
Operating and Storage Junction Temperature Range |
TJ, Tstg |
− 65 to +150 |
°C |
|
DC Blocking Voltage |
|
VR |
200 |
V |
Average Rectified Forward Current |
IF(AV) |
1.0 |
A |
|
THERMAL CHARACTERISTICS |
|
|
|
|
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
RqJC |
0.625 |
°C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ATTRIBUTES
|
Characteristic |
Value |
|
|
|
ESD Protection |
Human Body Model |
>8000 V |
|
Machine Model |
> 400 V |
|
|
|
Flammability Rating |
|
UL 94 V−0 @ 0.125 in |
|
|
|
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2
NJL3281D (NPN) NJL1302D (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
|
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage |
VCEO(sus) |
|
|
|
Vdc |
(IC = 100 mAdc, IB = 0) |
|
260 |
|
− |
|
Collector Cutoff Current |
ICBO |
|
|
|
mAdc |
(VCB = 260 Vdc, IE = 0) |
|
− |
|
50 |
|
Emitter Cutoff Current |
IEBO |
|
|
|
mAdc |
(VEB = 5 Vdc, IC = 0) |
|
− |
|
5 |
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
hFE |
|
|
|
|
(IC = 500 mAdc, VCE = 5 Vdc) |
|
75 |
|
150 |
|
(IC = 1 Adc, VCE = 5 Vdc) |
|
75 |
|
150 |
|
(IC = 3 Adc, VCE = 5 Vdc) |
|
75 |
|
150 |
|
(IC = 5 Adc, VCE = 5 Vdc) |
|
75 |
|
150 |
|
(IC = 8 Adc, VCE = 5 Vdc) |
|
45 |
|
− |
|
Collector−Emitter Saturation Voltage |
VCE(sat) |
|
|
|
Vdc |
(IC = 10 Adc, IB = 1 Adc) |
|
− |
|
3 |
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current−Gain − Bandwidth Product |
fT |
|
|
|
MHz |
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) |
|
30 |
|
− |
|
Output Capacitance |
Cob |
|
|
|
pF |
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) |
|
− |
|
600 |
|
Maximum Instantaneous Forward Voltage (Note 2) |
vF |
|
|
|
V |
(iF = 1.0 A, TJ = 25°C) |
|
|
1.1 |
|
|
(iF = 1.0 A, TJ = 150°C) |
|
|
0.93 |
|
|
Maximum Instantaneous Reverse Current (Note 2) |
iR |
|
|
|
mA |
(Rated dc Voltage, TJ = 25°C) |
|
|
10 |
|
|
(Rated dc Voltage, TJ = 150°C) |
|
|
100 |
|
|
Maximum Reverse Recovery Time |
trr |
|
100 |
ns |
|
(iF = 1.0 A, di/dt = 50 A/ms) |
|
|
|
|
|
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. |
|
|
|
|
|
http://onsemi.com
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