ON Semiconductor NJL0281D, NJL0281DG, NJL0302D, NJL0302DG Service Manual

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ON Semiconductor NJL0281D, NJL0281DG, NJL0302D, NJL0302DG Service Manual

NJL0281D (NPN)

NJL0302D (PNP)

Complementary

ThermalTrakt Transistors

The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.

Features

Thermally Matched Bias Diode

Instant Thermal Bias Tracking

Absolute Thermal Integrity

High Safe Operating Area

Pb−Free Packages are Available*

Benefits

Eliminates Thermal Equilibrium Lag Time and Bias Trimming

Superior Sound Quality Through Improved Dynamic Temperature Response

Significantly Improved Bias Stability

Simplified Assembly

Reduced Labor Costs

Reduced Component Count

High Reliability

Applications

High−End Consumer Audio Products

Home Amplifiers

Home Receivers

Professional Audio Amplifiers

Theater and Stadium Sound Systems

Public Address Systems (PAs)

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

BIPOLAR POWER

TRANSISTORS

15 AMP, 260 VOLT, 180 WATT

TO−264, 5 LEAD

CASE 340AA

STYLE 1

MARKING DIAGRAM

SCHEMATIC

NJL0xxxDG

AYYWW

Thermal Trak

NJL0xxxD = Device Code

 

xxx = 281 or 302

G

= Pb−Free Package

A

= Assembly Location

YY

= Year

WW

= Work Week

 

 

ORDERING INFORMATION

Device

Package

Shipping

 

 

 

NJL0281D

TO−264

25 Units / Rail

 

 

 

NJL0281DG

TO−264

25 Units / Rail

 

(Pb−Free)

 

 

 

 

NJL0302D

TO−264

25 Units / Rail

 

 

 

NJL0302DG

TO−264

25 Units / Rail

 

(Pb−Free)

 

 

 

 

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

June, 2006 − Rev. 2

 

NJL0281D/D

NJL0281D (NPN) NJL0302D (PNP)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

 

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

260

Vdc

Collector−Base Voltage

 

VCBO

260

Vdc

Emitter−Base Voltage

 

VEBO

5

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

260

Vdc

Collector Current

− Continuous

IC

15

Adc

 

− Peak (Note 1)

 

25

 

 

 

 

 

Base Current − Continuous

IB

1.5

Adc

Total Power Dissipation @ TC = 25°C

PD

180

W

Derate Above 25°C

 

 

1.43

W/°C

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

− 65 to +150

°C

DC Blocking Voltage

 

VR

200

V

Average Rectified Forward Current

IF(AV)

1.0

A

THERMAL CHARACTERISTICS

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

0.694

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

ATTRIBUTES

 

Characteristic

Value

 

 

 

ESD Protection

Human Body Model

>8000 V

 

Machine Model

> 400 V

 

 

 

Flammability Rating

 

UL 94 V−0 @ 0.125 in

 

 

 

http://onsemi.com

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