ON Semiconductor MC34152, MC33152, NCV33152 Technical data

MC33152DR2

MC34152, MC33152,

NCV33152

High Speed Dual

MOSFET Drivers

The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital signals to drive large capacitive loads with high slew rates. These devices feature low input current making them CMOS/LSTTL logic compatible, input hysteresis for fast output switching that is independent of input transition time, and two high current totem pole outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages.

Typical applications include switching power supplies, dc−to−dc converters, capacitor charge pump voltage doublers/inverters, and motor controllers.

This device is available in dual−in−line and surface mount packages.

Features

•Pb−Free Packages are Available

•Two Independent Channels with 1.5 A Totem Pole Outputs

•Output Rise and Fall Times of 15 ns with 1000 pF Load

•CMOS/LSTTL Compatible Inputs with Hysteresis

•Undervoltage Lockout with Hysteresis

•Low Standby Current

•Efficient High Frequency Operation

•Enhanced System Performance with Common Switching Regulator Control ICs

•NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes

			VCC 6
			+
			-
			5.7V
			Drive Output A
	Logic		7
	Input A	2
			100k

			Drive Output B
	Logic		5
	Input B	4
			100k
			GND 3

http://onsemi.com

			MARKING
			DIAGRAMS
		8
		PDIP−8	MC3x152P
		P SUFFIX	AWL
	8	CASE 626	YYWW
	1	1
			8
	8	SOIC−8	3x152
		D SUFFIX	ALYW
	1	CASE 751
			1
	x	= 3 or 4
	A	= Assembly Location
	WL, L = Wafer Lot

YY, Y	= Year
WW, W	= Work Week

PIN CONNECTIONS

N.C.	1	8		N.C.
Logic Input A	2	7		Drive Output A
GND	3	6		VCC
Logic Input B	4		5	Drive Output B

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Figure 1. Representative Diagram

Semiconductor Components Industries, LLC, 2004	1	Publication Order Number:
October, 2004 − Rev. 7		MC34152/D

MC34152, MC33152, NCV33152

MAXIMUM RATINGS

	Rating	Symbol	Value	Unit
Power Supply Voltage		VCC	20	V
Logic Inputs (Note 1)		Vin	−0.3 to +V CC	V
Drive Outputs (Note 2)				A
Totem Pole Sink or Source Current		IO	1.5
Diode Clamp Current (Drive Output to VCC)		IO(clamp)	1.0
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ TA = 50°C		PD	0.56	W
Thermal Resistance, Junction−to−Air		R JA	180	°C/W
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ TA = 50°C		PD	1.0	W
Thermal Resistance, Junction−to−Air		R JA	100	°C/W
Operating Junction Temperature		TJ	+150	°C
Operating Ambient Temperature	MC34152	TA	0 to +70	°C
	MC33152		−40 to +85
	MC33152V, NCV33152		−40 to +125
Storage Temperature Range		Tstg	−65 to +150	°C
Electrostatic Discharge Sensitivity (ESD)		ESD		V
Human Body Model (HBM)			2000
Machine Model (MM)			200

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values

(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.

2.Maximum package power dissipation limits must be observed.

ORDERING INFORMATION

	Device	Package	Shipping²
	MC34152D	SOIC−8	98 Units / Rail
	MC34152DG	SOIC−8	98 Units / Rail
		(Pb−Free)
	MC34152DR2	SOIC−8	2500 Tape & Reel
	MC34152DR2G	SOIC−8	2500 Tape & Reel
		(Pb−Free)
	MC34152P	PDIP−8	50 Units / Rail
	MC33152D	SOIC−8	98 Units / Rail
	MC33152DR2	SOIC−8	2500 Tape & Reel
	MC33152P	PDIP−8	50 Units / Rail
	MC33152PG	PDIP−8	50 Units / Rail
		(Pb−Free)
	MC33152VDR2	SOIC−8	2500 Tape & Reel
	NCV33152DR2*	SOIC−8	2500 Tape & Reel
	NCV33152DR2G*	SOIC−8	2500 Tape & Reel
		(Pb−Free)

²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

*NCV prefix is for automotive and other applications requiring site and change control.

http://onsemi.com

2

MC34152, MC33152, NCV33152

ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Note 3], unless otherwise noted.)

Characteristics		Symbol	Min	Typ	Max	Unit
LOGIC INPUTS
Input Threshold Voltage						V
	Output Transition High−to−Low State	VIH	−	1.75	2.6
	Output Transition Low−to−High State	VIL	0.8	1.58	−
Input Current						A
High State (VIH = 2.6 V)		IIH	−	100	300
Low State (VIL = 0.8 V)		IIL	−	20	100
DRIVE OUTPUT
Output Voltage						V
Low State (Isink = 10 mA)		VOL	−	0.8	1.2
(Isink = 50 mA)			−	1.1	1.5
(Isink = 400 mA)			−	1.8	2.5
High State (Isource = 10 mA)		VOH	10.5	11.2	−
(Isource = 50 mA)			10.4	11.1	−
(Isource = 400 mA)			10	10.8	−
Output Pull−Down Resistor		RPD	−	100	−	k
SWITCHING CHARACTERISTICS (TA = 25°C)
Propagation Delay (CL = 1.0 nF)						ns
Logic Input to: Drive Output Rise (10% Input to 10% Output)		tPLH (IN/OUT)	−	55	120
Drive Output Fall (90% Input to 90% Output)		tPHL (IN/OUT)	−	40	120
Drive Output Rise Time (10% to 90%)	CL = 1.0 nF	tr	−	14	30	ns
	CL = 2.5 nF		−	36	−
Drive Output Fall Time (90% to 10%)	CL = 1.0 nF	tf	−	15	30	ns
	CL = 2.5 nF		−	32	−
TOTAL DEVICE
Power Supply Current		ICC				mA
Standby (Logic Inputs Grounded)			−	6.0	8.0
Operating (CL = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)			−	10.5	15
Operating Voltage		VCC	6.5	−	18	V

3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.

Tlow = 0°C for MC34152, −40 °C for MC33152, −40 °C for MC33152V

Thigh = +70°C for MC34152, +85°C for MC33152, +125°C for MC33152V

NCV33152: Tlow = −40 °C, Thigh = +125°C. Guaranteed by design.

http://onsemi.com

3

	MC34152, MC33152, NCV33152
12V
4.7	0.1
+
	6
	+
+	-
	5.7V	Drive Output
Logic Input		7
2
	100k				90%
50		CL	5 V
			Logic Input
			tr, tf ≤ 10 ns
			0 V	10%
		5		tPLH	tPHL
4
	100k
					10%
			Drive Output
	3				90%
				tr	tf

Figure 2. Switching Characteristics Test CIrcuit

Figure 3. Switching Waveform Definitions

	2.4
		VCC = 12 V
	2.0	TA = 25°C
(mA)	1.6
CURRENT
	1.2
, INPUT	0.8
in	0.4
I
	0
	0	2.0	4.0	6.0	8.0	10	12

Vin, INPUT VOLTAGE (V)

Figure 4. Logic Input Current versus Input Voltage

	(ns)
	DELAY	200
				VCC = 12 V		Overdrive Voltage is with Respect
	PROPAGATION			CL = 1.0 nF		to the Logic Input Lower Threshold
		160		TA = 25°C
		120
	OUTPUT		80
	, DRIVE		40
	PLH(In/Out)		0				Vth(lower)
				-1.6	-1.2	-0.8	-0.4	0
			Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)
	t

Figure 6. Drive Output High to Low Propagation Delay versus Logic Input Overdrive Voltage

	2.2
(V)							VCC = 12 V
	2.0
VOLTAGE
	1.8					Upper Threshold
THRESHOLD	1.6					Low State Output
	1.4		Lower Threshold
			High State Output
, INPUT	1.2
th
V	1.0
	-55	-25	0	25	50	75	100	125
			TA, AMBIENT TEMPERATURE (°C)

Figure 5. Logic Input Threshold Voltage

versus Temperature

	(ns)
	DELAY	200
				Overdrive Voltage is with Respect		VCC = 12 V
				to the Logic Input Upper Threshold		CL = 1.0 nF
	PROPAGATION
		160				°
						TA = 25 C
		120
	OUTPUT	80
	, DRIVE	40
	PHL(In/Out)	0	Vth(upper)
			1	2	3	4
		0
		Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)
	t

Figure 7. Drive Output Low to High Propagation Delay versus Logic Input Overdrive Voltage

http://onsemi.com

4